Thermal decomposition of monosilane on silicon in a flow-through reactor under synthesis conditions of SiC/Si hybrid structuresby the method of coordinated substitution of atoms (MCSA)
DOI:
https://doi.org/10.17308/kcmf.2026.28/13638Keywords:
Mass spectrometry, Silicon carbide on silicon, Desorption, Monosilane dissociation, Surface roughnessAbstract
Objectives: The work investigates the process of monosilane decomposition on the surface of a silicon wafer at temperatures of 400–900 °C in the reactor zone for the synthesis of silicon carbide layers on silicon by the Method of Coordinated Substitution of Atoms.
Experimental: The process of thermal decomposition of monosilane was investigated by mass spectrometry using a quadrupole mass spectrometer. Monosilane decomposition fragments and the dependence of their partial pressures on temperature were determined. It was experimentally found that the temperature at which monosilane decomposition begins is 525 °C. Root mean square and effective surface roughness of the silicon substrate were determined by profilometry and ellipsometry methods, respectively, before and after monosilane decomposition on it.
Conclusions: It was shown that the decomposition of monosilane on the surface of a silicon substrate leads to a slight increase in its roughness
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