Stabilization of high-temperature phases in the Ga2S3-family via manganese doping. Control over crystal structure and composition

Authors

  • Alexander Y. Zavrazhnov Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation
  • Nikolay Y. Brezhnev Voronezh Agrarian State University, 1, Michurin st., Voronezh 394087, Russian Federation
  • Michael V. Dorokhin Physical-Technical Research Institute of UNN (PTRI), 23, Gagarin av., BLDG, Nizhny Novgorod 603950, Russian Federation
  • Andrew V. Kosyakov Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation
  • Ivan N. Nekrylov Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation
  • Elizabeth A. Tyurina Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences (ICHPS RAS), 49, Tropinin st., Nizhny Novgorod 603950, Russian Federation
  • Karina D. Chunta Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

DOI:

https://doi.org/10.17308/kcmf.2026.28/13639

Keywords:

Mn – Ga – S - system, Phase equilibria, Structures with native vacancies, phase stabilization

Abstract

Objectives: This work addresses the problem of reproducible inorganic synthesis, namely, the production of high-temperature defects in gallium-sesquisulfide-phases, stabilized by suitable impurity doping at a suitable concentration. The goal of the work is to elucidate the concentration-temperature conditions under which the various modifications of Ga2S3 doped with a selected component (M) are stable (relative to other phases of the M–Ga–S system).

Experimental: Novel approaches for doping and synthesizing phase-pure polycrystalline samples of reproducibly obtained structures and compositions are used in this investigation. The powder XRD is applied for structural identification.

Conclusions: It is shown that doping gallium sesquisulfide with manganese expands the range of existence of all three high-temperature phases of the Ga2S3-family to low temperatures. The temperature conditions for the existence of each phase of the Ga2S3:Mn solid solution with a specific structure depend not only on the manganese impurity concentration but also on the Gato-S ratio. This leads to the fact that for quasi-binary sections of the ternary Mn–Ga–S system with very similar component ratios, different phases of Ga2S3:Mn solid solutions are formed at the same temperatures. The advantages of using the method of selective chemical transport reactions to control the composition and structures of Ga2S3:Mn solid solutions are demonstrated

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Author Biographies

  • Alexander Y. Zavrazhnov, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

    Dr. Sci. (Chem.), Full Professor, Department of General and Inorganic Chemistry, Voronezh State University (Voronezh, Russian Federation)

  • Nikolay Y. Brezhnev, Voronezh Agrarian State University, 1, Michurin st., Voronezh 394087, Russian Federation

    Senior Lecturer at the Department of Chemistry, Voronezh State Agricultural University (Voronezh, Russian Federation)

  • Michael V. Dorokhin, Physical-Technical Research Institute of UNN (PTRI), 23, Gagarin av., BLDG, Nizhny Novgorod 603950, Russian Federation

    Dr. Sci (Phys.-Math.), Leading Researcher at the Physical-Technical Research Institute of UNN (PTRI) (Nizhny Novgorod, Russian Federation)

  • Andrew V. Kosyakov, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

    Cand. Sci. (Chem.), Assistant Professor, Department of General and Inorganic Chemistry, Voronezh State University (Voronezh, Russian Federation)

  • Ivan N. Nekrylov, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

    applicant for an academic degree at the Department of General and Inorganic Chemistry, Voronezh State University (Voronezh, Russian Federation)

  • Elizabeth A. Tyurina, Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences (ICHPS RAS), 49, Tropinin st., Nizhny Novgorod 603950, Russian Federation

    Cand. Sci. (Chem.), Researcher at the Laboratory of High-Purity Glasses, Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences (ICHPS RAS) (Nizhny Novgorod, Russian Federation)

  • Karina D. Chunta, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

    fourth-year student of the Chemistry Department of Voronezh State University (Voronezh, Russian Federation)

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Published

2026-06-25

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Vol. 28 No. 2 (2026)

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Original articles

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Stabilization of high-temperature phases in the Ga2S3-family via manganese doping. Control over crystal structure and composition. (2026). Kondensirovannye Sredy I Mezhfaznye Granitsy = Condensed Matter and Interphases, 28(2), 198-216. https://doi.org/10.17308/kcmf.2026.28/13639