Noise figure reduction of a GaAs-based pHEMT transistor by optimizationof the gate barrier layer thickness using numerical simulation

Elena I. Vasilkova; Kseniia Yu. Shubina; Denis S. Papylev; Vladislav V. Andryushkin; Evgeny V. Pirogov; Andrey G. Gladyshev; Innokenty I. Novikov; Leonid Ya. Karachinsky; Maxim S. Sobolev

doi:10.17308/kcmf.2026.28/13967

Authors

Elena I. Vasilkova Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation
Kseniia Yu. Shubina Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation
Denis S. Papylev ITMO University, 49, bldg. A, Kronverksky pr., St. Petersburg 197101, Russian Federation
Vladislav V. Andryushkin ITMO University, 49, bldg. A, Kronverksky pr., St. Petersburg 197101, Russian Federation
Evgeny V. Pirogov Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation
Andrey G. Gladyshev Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation
Innokenty I. Novikov Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation
Leonid Ya. Karachinsky Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation
Maxim S. Sobolev Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

DOI:

https://doi.org/10.17308/kcmf.2026.28/13967

Keywords:

GaAs-pHEMT,, Numerical Simulation, Noise figure, Transconductance

Abstract

Objectives: The objective of the present work is to reduce the noise figure of a GaAs-based pHEMT transistor by optimizing the thickness of the gate barrier layer of the transistor heterostructure, and to investigate the applicability of numerical simulation methods for this purpose.

Experimental: Numerical simulation of the transconductance and drain current of a low-noise pHEMT transistor was carried out using the drift-diffusion and hydrodynamic models of charge carrier transport in the channel.

Conclusions: It is shown that the hydrodynamic model describes the experimental results for a pHEMT transistor with a sub-micron gate length more accurately than the drift-diffusion model. The optimal heterostructure design of a low-noise pHEMT transistor was determined by means of the hydrodynamic numerical model, which resulted in a reduction of the minimum noise figure of the pHEMT transistor by 0.1 dB to a level of 0.7 dB

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Author Biographies

Elena I. Vasilkova, Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

Junior Researcher, Alferov University (Saint Petersburg, Russian Federation)
Kseniia Yu. Shubina, Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

Cand. Sci. (Phys.–Math.), Кesearcher, Alferov University (Saint Petersburg, Russian Federation)
Denis S. Papylev, ITMO University, 49, bldg. A, Kronverksky pr., St. Petersburg 197101, Russian Federation

Engineer, ITMO University (Saint Petersburg, Russian Federation)
Vladislav V. Andryushkin, ITMO University, 49, bldg. A, Kronverksky pr., St. Petersburg 197101, Russian Federation

Cand. Sci. (Tech.), Senior Researcher, ITMO University (Saint Petersburg, Russian Federation)
Evgeny V. Pirogov, Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

Researcher, Alferov University (Saint Petersburg, Russian Federation)
Andrey G. Gladyshev, Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

к. ф.-м. н., с. н. с., СП- бАУ РАН им. Ж. И. Алферова (Санкт-Петербург, Российская Федерация)
Innokenty I. Novikov, Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

Cand. Sci. (Phys.–Math.), Senior Researcher, Alferov University (Saint Petersburg, Russian Federation)
Leonid Ya. Karachinsky, Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

Dr. Sci. (Tech.), Chief Researcher, Alferov University (Saint Petersburg, Russian Federation)
Maxim S. Sobolev, Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

Cand. Sci. (Phys.–Math.), Head of the Laboratory, Alferov University (Saint Petersburg, Russian Federation)

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