Анализ фазового состава аморфной пленки Mo-Si,полученной ионно-лучевым распылением по данным УМРЭС и рентгеновской рефлектометрии

Konstantin A. Barkov; Ivan V. Polshin; Sergey A. Ivkov; Yaroslav A. Peshkov; Selby Y. Khydyrova; Konstantin M. Moiseev; Evgenii S. Kersnovsky; Igor E. Zanin; Alexandra K. Pelagina; Nikita S. Buylov; Van Tu Tran; Alexandr E. Nikonov; Aleksandr V. Sitnikov

doi:10.17308/kcmf.2026.28/13804

Authors

Konstantin A. Barkov 1ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация
Ivan V. Polshin ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация
Sergey A. Ivkov ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация
Yaroslav A. Peshkov ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация
Selby Y. Khydyrova Bauman Moscow State Technical University, 5 2‑nd, Baumanskaya st., Moscow 105005, Russian Federation
Konstantin M. Moiseev Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation , Bauman Moscow State Technical University, 5 2‑nd, Baumanskaya st., Moscow 105005, Russian Federation
Evgenii S. Kersnovsky ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация
Igor E. Zanin ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация
Alexandra K. Pelagina Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation
Nikita S. Buylov АО «Научно-исследовательский институт электронной техники», ул. Старых Большевиков, 5, Воронеж 394033, Российская Федерация , ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация
Van Tu Tran University of Medicine and Pharmacy at Ho Chi Minh city, 217 Hong Bang Street, Wars 11, District 5, HCMC, Viet Nam
Alexandr E. Nikonov Voronezh State Technical University, 84, 20th Anniversary of October st., Voronezh 394006, Russian Federation
Aleksandr V. Sitnikov ФГБОУ ВО Воронежский государственный технический университет, ул. 20‑летия Октября, 84, Воронеж 394006, Российская Федерация

DOI:

https://doi.org/10.17308/kcmf.2026.28/13804

Keywords:

сверхпроводимость, Mo3Si, пленки Mo-Si, аморфные силициды, ионно-лучевое распыление, ультрамягкая рентгеновская эмиссионная спектроскопия, рентгеновская рефлектометрия

Abstract

Анализ фазового состава аморфной пленки Mo-Si, полученной ионно-лучевым распылением по данным УМРЭС и рентгеновской рефлектометрии

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Author Biographies

Konstantin A. Barkov, 1ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация

Cand. Sci. (Phys.-Math.), Head of the Laboratory, Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation)
Ivan V. Polshin, ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация

student, Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation)
Sergey A. Ivkov, ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация

Cand. Sci. (Phys.-Math.), Leading Electronics Engineer, Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation)
Yaroslav A. Peshkov, ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация

Cand. Sci. (Phys.-Math.), Research Associate, Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation)
Selby Y. Khydyrova, Bauman Moscow State Technical University, 5 2‑nd, Baumanskaya st., Moscow 105005, Russian Federation

postgraduate student, Department of Electronic Technologies in Mechanical Engineering, Bauman Moscow State Technical University (Moscow, Russian Federation)
Konstantin M. Moiseev, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation, Bauman Moscow State Technical University, 5 2‑nd, Baumanskaya st., Moscow 105005, Russian Federation

Assistant Professor, Department of Electronic Technologies in Mechanical Engineering, Bauman Moscow State Technical University (Moscow, Russian Federation)
Evgenii S. Kersnovsky, ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация

student, Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation)
Igor E. Zanin, ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация

Cand, Sci. (Phys.-Math.), Assistant Professor, General Physics Department, Voronezh State University (Voronezh, Russian Federation)
Alexandra K. Pelagina, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

Engineer-Physicist, Voronezh State University (Voronezh, Russian Federation)
Nikita S. Buylov, АО «Научно-исследовательский институт электронной техники», ул. Старых Большевиков, 5, Воронеж 394033, Российская Федерация, ФГБОУ ВО «Воронежский государственный университет», Университетская пл., 1, Воронеж 394018, Российская Федерация

Cand. Sci. (Phys.-Math.), Assistant Professor, Department of Solid State Physics and Nanostructures, Voronezh State University; Engineer, Research Institute of Electronic Technology (Voronezh, Russian Federation)
Van Tu Tran, University of Medicine and Pharmacy at Ho Chi Minh city, 217 Hong Bang Street, Wars 11, District 5, HCMC, Viet Nam

PhD, Lecturer, Faculty of Fundamental Sciences, Department of Physics, University of Medicine and Pharmacy at Ho Chi Minh city (Ho Chi Minh city, Viet Nam)
Alexandr E. Nikonov, Voronezh State Technical University, 84, 20th Anniversary of October st., Voronezh 394006, Russian Federation

Cand. Sci. (Phys.-Math.), Research Engineer, Department of Solid-State Electronics, Voronezh State Technical University (Voronezh, Russian Federation)
Aleksandr V. Sitnikov, ФГБОУ ВО Воронежский государственный технический университет, ул. 20‑летия Октября, 84, Воронеж 394006, Российская Федерация

Dr. Sci. (Phys.-Math.), Full Professor, Departments of Solid-State Electronics, Voronezh State Technical University (Voronezh, Russian Federation)

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