TiO2 thin-film dielectric properties are impacted by annealing

H. D. Chandrashekara; P. Poornima

doi:10.17308/kcmf.2025.27/13010

H. D. Chandrashekara SriHDDGFGC, Department of Physics, Paduvalahippe, H. N. Pura 573211, India https://orcid.org/0000-0001-9976-3128
P. Poornima Maharanis Science College, Department of Physics, Mysore 570005, Karnataka, India https://orcid.org/0000-0001-7685-6778

DOI: https://doi.org/10.17308/kcmf.2025.27/13010

Keywords: Loss tangent, Angular frequency, Conductance, Series resistance, Impedance

Abstract

Purpose: This study investigates the structural, morphological, and dielectric properties of TiO₂ thin films deposited using the Spray Pyrolysis Deposition (SPD) process and annealed at various temperatures.

Experimental: X-ray diffraction (XRD) analysis confirms the absence of an amorphous phase at 300 °C, while the anatase and rutile phases emerge at 400 °C, 500 °C, and 600 °C, with crystallite sizes increasing from 10.62 to 17.35 nm. Scanning electron microscopy (SEM) reveals a consistent grain growth trend, with grain sizes exceeding XRD estimates. Energydispersive X-ray (EDAX) spectroscopy confirms a stoichiometric Ti:O ratio and uniform nanoparticle distribution. The dielectric properties of Pt/TiO₂/Si MOS capacitors were analyzed, demonstrating improved electrical stability with annealing. Conductance studies indicate a reduction in defect states, enhanced crystallinity, and stable dielectric behavior at higher frequencies. The hysteresis loop analysis reveals decreased losses at 600 °C due to minimized trapped charges and broken bonds. Impedance spectroscopy highlights capacitive behavior, with relaxation peaks at 400 °C, 500 °C, and 600°C, while conductance measurements indicate thermal activation of charge carriers.

Conclusions: These findings suggest that TiO₂ thin films exhibit promising dielectric properties for potential applications in Si-based MOS capacitors and VLSI technology

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Author Biographies

H. D. Chandrashekara, SriHDDGFGC, Department of Physics, Paduvalahippe, H. N. Pura 573211, India

MSc, Mphil, PhD, Associate Professor, Department of Physics, SriHDDGFGC (Hassan, Karnataka, India)

P. Poornima, Maharanis Science College, Department of Physics, Mysore 570005, Karnataka, India

MSc, Mphil, PhD, Associate Professor, Department of Physics, Maharanis Science College (Mysore,
Karnataka, India)

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