Solid wetting layer, interphase formation, and thin-film nanomaterials. Brief review

  • Nikolay I. Plyusnin Military Academy of Communications named after Marshal of the Soviet Union S.M. Budyonny Ministry of Defense of the Russian Federation, 3 Tikhoretsky pr., K-64, St. Petersburg, 194064, Russian Federation
Keywords: Solid wetting layers, Growth, Electronic and atomic structure, Nanomaterials, metal, Silicon


      A review of the results on the formation of the interface between 3d metals and silicon silicides under identical conditions for various parameters of the deposited vapor, crystallographic orientation and substrate temperature is presented. A generalization of the results has been carried out, which consists of the fact that during the process of deposition of hot vapor on a colder substrate, the transition from the surface phase to the bulk phase occurs through a solid wetting layer (SWL). A classification of substrate-stabilized phases, including SWL, is proposed. It has been shown that SWL has an electronic density different from bulk phases, a smooth or nanostructured morphology, optical, electrical, and magnetic properties, and plays an important role in the formation of interfaces between bulk phases, their epitaxial films and multilayer nanostructures. These studies suggest the promise of SWL as a new nanotechnology object for the creation of thin-film nanomaterials.
      The studied problem is the formation of interfaces in thin-film nanomaterials. The purpose of the article is to substantiate the discovery of nonequilibrium solid wetting layers, their uniqueness and their role in the formation of the above-mentioned interfaces. This is important research for nanomaterial technologies.
      A review and generalization of the results of the study of the metal–silicon interface obtained under identical conditions was carried out. The review shows the detection a new type of transition state of the film under nonequilibrium conditions, a solid wetting layer, and the generalization justifies its role in the formation of the interface. Solid wetting layers are important as a new concept for the development of the theory of thin film growth, as well as a new object of nanotechnology for the production of thin-film nanomaterials


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Author Biography

Nikolay I. Plyusnin, Military Academy of Communications named after Marshal of the Soviet Union S.M. Budyonny Ministry of Defense of the Russian Federation, 3 Tikhoretsky pr., K-64, St. Petersburg, 194064, Russian Federation

Dr. Sci. (Phys.–Math.), Associate
Professor, Senior Researcher at the Federal State
Treasury Military Educational Institution of Higher
Education “Military Order of Zhukov and Lenin Red
Banner Academy of Communications named after
Marshal of the Soviet Union S.M. Budyonny» (Military
Academy of Communications) of the Ministry of
Defense of the Russian Federation (St. Petersburg,
Russian Federation)


Lifshits V. G., Plyusnin N. I. Electronic interaction and silicide formation in the Cr-Si(111) system at the initial stage of growth*. Physics, Chemistry and Mechanics of Surfaces. 1984;9: 78–85. (In Russ.)

Lifshits V. G., Plyusnin N. I. Electronic structure and silicide formation in thin films of transition metals on silicon. Preprint of IAPU FESC AS USSR. 1984;18(127):1–35. (In Russ.)

Plyusnin N. I. Solid-phase wetting layer. Great Russian Encyclopedia*. (Ed. Kostyuk A.V.). 2023. (In Russ.)

Fathauer R. W., Grunthaner P. J., Lin T. L., Chang K. T., Mazur J. H., Jamieson D. N. Molecular-beam epitaxy of rSi2 on Si (111). Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 1988;6(2): 708–712.

Wetzel P., Pirri C., Peruchetti J. C., Bolmont D., Gewinner G. Epitaxial growth of CrSi and CrSi2 on Si (111). Physical Review B. 1988;65,10: 1217–1220.

Feibelman P. J. The first wetting layer on a solid. Physics Today. 2010;63(2): 34.

Voigtländer B. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth. Surface Science Reports. 2001;43(5-8): 127–254.

Osipov A. V., Kukushkin S. A., Schmitt F., Hess P. Kinetic model of coherent island formation in the case of self-limiting growth. Physical Review B. 2001;64(20): 205421.

Osipov, A. V., Kukushkin, S. A., Schmitt, F., Hess, P. Stress-driven nucleation of coherent islands: theory and experiment. Applied Surface Science. 2002;188(1-2): 156–162.

Kukushkin S. A., Osipov A. V., Schmitt F., Hess P. The nucleation of coherent semiconductor islands during the Stranski–Krastanov growth induced by elastic strains. Semiconductors. 2002;36(10): 1097–1105.

Lifshits V. G., Akilov V. B., Churusov B. K., Gavriljuk Y. L. The role of surface phases in processes on silicon surfaces. Surface Science. 1999;222(1): 21–30.

Plusnin N. I. Metal thin-film nanophases and their interface with silicon. Journal of Physics: Conference Series. 2008;100(5): 052094.

Plyusnin, N. I. Substrate-stabilized phases and processes of interface formation in heterostructures based on transition 3d metal (Cr, Co) and silicon. Dissertation for the degree of Doctor of Physical and Mathematical Sciences. Vladivostok: 2000. 376 p. (In Russ.) Available at: https://w w

Plusnin N. I., Il’yashenko V. M., Milenin A. P. The growth and conductivity of transition metal nanolayers on silicon. Physics of Low-Dimensional Structures. 2002;11: 39–48. Режим доступа:

Plusnin N. I., Il’yashenko V. M., Milenin A. P. Atomic-force microscopy probe-activated morphological transformations in a nanophase copper wetting layer on silicon. Technical Physics Letters. 2018;44: 187–190.

Plyusnin N. I., Usachev P. A., Pavlov, V. V. Effect of thickness and annealing of the Si (001) 2×1-Cu wetting layer on the morphology of layered nanofilms based on Fe, Co, and Cu and their ferromagnetic properties. St. Petersburg Polytechnic University Journal. Physics and Mathematics, 2022;15(3.1): 131–136.

Plyusnin N. I. Stratification of the Fe/Si(001)2×1 interface by heat treatment of the wetting layer. Technical Physics. 2023;68(1): 146–150.

Pliusnin N. Subnanophase coatings as new type low-dimensional nanomaterials: Ultra-high-vacuum synthesis, properties and application. Characterization and Application of Nanomaterials. 2020;3(2): 81–86.

Plusnin N. I. Atomic-scale AES-EELS analysis of structure-phase state and growth mechanism of layered nanostructures. Advances in Materials Physics and Chemistry. 2016;6(7): 195–210.

Plusnin N. I. Atomic-scale control of molecularbeam growth of nanolayers. In: Comprehensive guide for nanocoatings technology volume 2. Characterization and reliability. New York: Nova Publisher; 2015. pp. 87–102. Available at:

Plyusnin N. I. Atomic-scale control of molecular- beam growth of thin-film nanohetero structures. Vestnik of Far Eastern Branch of Russian Academy of Sciences. 2010(5): 26–34. (In Russ, abstract in Eng.). Available at:

Plusnin, N. From atomic-scale interfaces – To new nanomaterials. Characterization and Application of Nanomaterials. 2019;.2(2): 54–59.

Plyusnin, N. I. Formation of a Nanophase Wetting Layer and Metal Growth on a Semiconductor. Technical Physics Letters. 2018;44: 980–983.

Plyusnin, N. I. Phenomenological models of nucleation and growth of metal on a semiconductor. Physics of the Solid State. 2019;61: 2431–2433.

Maslov A. M., Plusnin N. I. Evolution of optical spectra at the initial stages of Fe growth on Si (001). Defect and Diffusion Forum. Trans Tech Publications. 2018;386: 15–20.

Hannon J. B., Hibino H., Bartelt N. C., Swartzentruber B. S., Ogino T., Kellogg G. L. Dynamics of the silicon (111) surface phase transition. Nature. 2000; 405 (6786): 552–554.

Lifshits V. G., Saranin A. A., Zotov A. V. Surface phases on silicon: preparation, structures and properties. hichester – New York-Brisbane – Toronto – Singapore: John Wiley & Sons. 1994. 448 p. Режим доступа:

Lifshits V. G., Churusov B. K., Gavrilyuk Y. L., ... Tsukanov D. A. Surface phases and nanostructures on silicon surface. Journal of Structural Chemistry. 2004;45: S36–S59.

Plyusnin N. I. Surface phases and the formation of the interface between Cr and CrSi2 with singlecrystalline silicon. Dissertation for the degree of candidate of physical and mathematical sciences*. Vladivostok: 1986. 199 p. (In Russ.) Available at:

Plyusnin N. I. Growth and mixing processes activated by the reaction at the interface in the transition metal-silicon system. In: Processes of heat and mass transfer and growth of single crystals and thinfilm structures*: Proceedings of the Second Russian Symposium HT&CG’97 (22–24 September 1997), ed.V. P. Ginkina. Obninsk: 1998. pp. 303-309. (In Russ.). Available at:

Plyusnin N. I. Low-dimensional phases and the formation of nanoheterostructures in the transition 3D-metal-silicon system. Surface. X-ray, synchrotron and neutron studies*. 2005;1: 17–27. (In Russ.) Available at:

Grazhulis, V. A., Bondarev, V. V., …Plusnin N. I. Electron transport in the Si (111)-Cr (√ 3×√ 3) °-aSi surface phase and in epitaxial films of CrSi, CrSi2 on Si (111). Surface Science. 1993;292(3): 298–304.

Bondarev V. V. Study of electronic transport properties of surface phases of In and Cr on Si(111). Abstract of the dissertation for the scientific degree of candidate of physical and mathematical sciences*. Chernogolovka: 1993. 17 p. (In Russ.) Available at:

Plusnin N. I., Il’yashenko V. M., Kitan S. A., Krylov S. V. Formation of Co ultrathin films on Si(111): Growth mechanisms, electronic structure and transport. Applied Surface Science. 2007;253(17): 7225–7229.

Plusnin N. I., Galkin N. G., Lifshits V. G., Lobachev S. A. Formation of interfaces and templates in the Si (111)-Cr system. Surface Review and Letters. 1995;2(04): 439–449.

Plusnin N. I., Soldatov V. Y., Milenin A. P. EELS peak intensity dependence on primary electron energy for the Si (111) 7×7 and Si (111)-Cr surface structures. Surface Science. 1999;426(1): 38–47.

Plusnin N. I. Milenin A. P., Iliyashenko B. M., Lifshits V. G. Elevated rate growth of nanolayers of Cr and CrSi2 on Si(111). Physics of Low-Dimensional Structures. 2002;9: 129–146. Режим доступа:

Plusnin N. I. Milenin A. P., Prihod’ko D. P. Formation of the Co/Si (111) 7×7 interface: AES-and EELS-study. Applied Surface Science. 2000;166(1-4): 125–129.

Plyusnin N. I. Method for formation an ultra thin film. Patent RF No. 2011146799А. Publ. 27.05.2013, bull. No. 15. Available at:Николай+Иннокентьевич+Плюснин

Plyusnin N. I., Il’yashchenko V. M., Kitan’ S. A., Krylov, S. V. Formation, electronic structure, and stability of film nanophases of transition metals on silicon. Journal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques. 2009;3: 734–746.

Plyusnin N. I. and others. Structural and phase transformations during initial stages of copper condensation on Si(001). Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 2011.

Plusnin N. I. Metallic nanofilms on single crystal silicon: Growth, properties and applications. Modern Electronic Materials. 2017;3(2): 57–65.

Profile: Nikolai Inokentievich Plyusnin. GOOGLE Academy. (In Russ.) ru/citations?hl=ru&user=EuZUhCEAAAAJ&pagesize=80&view_op=list_works

How to Cite
Plyusnin, N. I. (2023). Solid wetting layer, interphase formation, and thin-film nanomaterials. Brief review. Condensed Matter and Interphases, 25(4), 594-604.
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