Refinement of the calculation of the efficiency of a chemical generator
Abstract
Aim of the article: Analitical calculations and preliminary estimates of efficiency of a chemical generators are of great importance for analysis of conversion chemical energy into electrical one, the base which was consist transformation of heterogeneous chemical energy of formation hydrogen molecules into energy of electronic excitation on the surface of catalyst-semiconductors. However in the works cited by the calculation of probability excitation of chemo-electrons (high-energy electrons in conduction band) is not taken into account of the phonon’s channel of the chemical energy accommodation. Such consideration would be by disdain of interaction excited electron with lattice, but in condition of the scattering chemical reaction energy inevitably was shifted of the equilibrium position of oscillators, leading to emission and absorption of phonons. Therefor the technique of the calculation must take into account as electrons as phonons
channels of the accomodation. Aim of given work is derivation of the theoretical formula for efficiency of chemo-generator with provision for thermo-stimuleted transition of electrons to conduction band, with the subsequent analysis of particular cases.
Theoretical part: The influence of local thermal oscillations of crystal were inducted the effect of chemical reaction energy of formation hydrogen molecules on the “catalyst” surface, on velocity generation of the high-energy electrons was theoretical investigated. The formulas for efficiency of generator, clarifying the corresponding formulas from the other works was obtained. It is indicated on an impotant part of thermo-stimuleted transitions of an electrons to the conduction band of the semiconductor at room temperatures.
Conclusions: The results obtained may be useful by qualitatively analysis of the accommodation mechanisms of a chemical energy in the context of problem of conversion a chemical energy to electrical one
Downloads
References
Grankin V. P., Grankin D. V. Electronic excitation and current generation in a heterostructure under the action of hydrogen atoms. Russian Journal of Physical Chemistry A. 2020;94(10): 2047–2050. https://doi.org/10.1134/S0036024420100118
Grankin V. P., Grankin D. V. Electronic excitation of the surface of UV-irradiated solids in heterogeneous recombination of hydrogen atoms. Russian Journal of Physical Chemistry A. 2016;90(6): 1280–1285. https://doi.org/10.1134/S003602441606008X
Boreskov G. K. Heterogeneous catalysis*. Moscow: Nauka Publ.; 1986. 304 p. (In Russ.)
Fischer R., Neumann H. Field emission from semiconductors*. Moscow: Nauka Publ.; 1971. 216 p. (In Russ.)
Semenov I. N., Bogdanov R. V. Energy and chemical process*. Leningrad: Khimiya Publ.; 1973. 112 p. (In Russ.)
Dmitriev I. S. Symmetry in the world of molecules*. Leningrad branch: Khimiya Publ.; 1976. 128 p. (In Russ.)
Golikov G. A. Handbook of physical chemistry*. Moscow: Vysshaya shkola Publ.; 1988. 383 p. (In Russ.)
Poltorak O. M. Thermodynamics in physical chemistry*. Moscow: Vysshaya shkola Publ.; 1991. 319 p. (In Russ.)
Mitrofanov V. V., Fogel` V. A. Physics and chemistry of semiconductors*. Leningrad. Sudostroenie Publ.; 1965. 219 p. (In Russ.)
Muratov T. T. Compensation effect of growth of the lifetime of charged carriers in semiconductors at a magnetic field. Semiconductors. 2022;56(11): 831–835. https://doi.org/10.21883/SC.2022.11.54958.4350
Muratov T. T. Statistical approach to the process of tunnel ionization of impurity centers near the heterointerface. Condensed Matter and Interphases. 2021;23(4): 529–534. https://doi.org/10.17308/kcmf.2021.23/3671
Muratov T. T. Influence of the Zeeman effect on the three-body recombination process in the ultracold plasma. Izvestiya Vuzov. Fizika. 2023;66(8): 74–79. (In Russ.). https://doi.org/10.17223/00213411/66/8/9
Reissland J. A. The physics of phonons. London: New York: Wiley; 1973. 319 p.
Grankin V. P., Grankin D. V. Non-adiabatic chemoelectronic energy conversion in a Schottky diode*. In: Proceedings of the international scientific and technical conference “INTERMATIC-2015”. Part 4. MIREA. 1-5 December 2015. Moscow: 2015. p. 101–104. (In Russ.)
Mashkina E. S. 1/f2 noise as a precursor of structural reconstructions near the melting point of crystalline materials with different types of chemical bonds. Condensed Matter and Interphases. 2024;26(2): 362–366. https://doi.org/10.17308/kcmf.2024.26/12071
Abakumov V. N., Perel V. I, Yassievich I. N. Nonradiative recombination in semiconductors. New York: Elsevier Publishing Company; 1991, 336 p.
Grankin D. V. Energy efficiency of chemical energy conversion into electrical energy by a Schottky diode with a nano-sized metal film*. In: Proceedings of the international scientific and technical conference “INTERMATIC-2016”. Part 1. MIREA 21–25 November 2016. Moscow: 2016. p. 108–112. (In Russ.)
Mooney P. M. Deep donor levels (DX centers) in III–V semiconductors. Journal of Applied Physcs.1990;67(3): R1–R26. https://doi.org/10.1063/1.345628
Styrov V. V. Nonequilibrium generation of hot electrons in a metal during chemical reaction at the liquidmetal interface. Technical Physics Letters. 2015;41(2): 195–199. https://doi.org/10.1134/S1063785015020261
Styrov V. V., Simchenko S. V. SiC-based nanosized structures with p-n junctions for transforming chemical energy into electricity and sensors. Technical Physics Letters. 2013; 39(7): 621–625. https://doi.org/10.1134/S1063785013070122
Copyright (c) 2025 Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases

This work is licensed under a Creative Commons Attribution 4.0 International License.








