Formation of oxide films on manganese silicide-germanides of various compositions during anodic polarization in an aqueous sodium sulfate solution
Abstract
Objectives: Manganese silicide-germanides, with the general formula composition Mn5(Si,Ge)3, different in the quantitative ratio of silicon and germanium with the formula Mn5Si2.40Ge0.60, Mn5Si0.60Ge2.40, and Mn5Si0.15Ge2.85, were subjected to anodic polarization in an aqueous sodium sulfate solution. The main objective of the study was the determination of the products of their anodic transformation in a non-oxidizing neutral medium and the identification of regularities of the formation of oxide films on their surface.
Experimental: The cyclic voltammetry method showed that the anodic oxidation process is not reversible. Polarization measurements were accompanied by subsequent monitoring of changes in the surface state using electron microscopy. The micro-X-ray spectral analysis was used for the determination of the ratio of elements on the surface before polarization of the sample and in the corrosion products.
Conclusions: The results of the study demonstrated that during the anodic transformation process for all materials, the fraction of manganese in the samples decreased, the fraction of germanium increased, and the fraction of silicon changed insignificantly. It was concluded that the dissolution of the material components occurs selectively: manganese was predominantly ionized from the solid phase of manganese germanide into the solution, and its content on the surface was reduced to insignificant amounts. Silicon and germanium formed loose oxide layers without good adhesion to a hard, manganese-depleted surface and did not provide a serious protective effect. Germanium (II) oxide and partially hydrated germanium (IV) oxide GeO2 x H2O were the main products of anodic oxidation that remained on the surface. Silicon oxide
was also present in anodic oxidation products, but in lower quantities, and was not sufficient for the provision of the protective effect of the material.
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