Phase equilibrium in system Sm2Te3–GeTe
Objective. GeTe and some alloys on its basis are prospective materials. There are information on the infl uence of rare earth chalcogenides on thermoelectrically properties of germanium telluride in literature.Synthesis of new complicated triple alloys from the fi elds of solid solutions on the base of initial semiconductive compounds allows me to recommend the obtained materials for usage in different possible fi elds of science and technics.
Purpose. The aim of this work is an investigation of phase equibilibrium interaction in Sm2Te3–GeTe system with phase diaqram construction, defi nition of homogenosity fi elds and newsemiconductive phases.
Methods and methodology. The section of Sm2Te3–GeTe was studied by methods of physicalchemical analysis: differential-thermal (DTA), high temperature differential-thermal (HTDT), X-ray phase, microstructural analysis (MSA), as well as measurement of density and micro hardness. DTA was performed with pyrometer HTP-75. HTDT was performed with HTDT-8m (Tmelt ≥ 1500×2000 K) by analogical method. X-ray phase analysis was performed by powder method with X-ray diffractometer DRON-2 (CuKa-radiation with Ni-fi lter). MSA was performed with microscope MIM-8. Micro hardness of alloys was measured with micro- hardness tester PMP-3. Density of alloys was determined by pycnometer test.
Results. Based on data of physical-chemical analysis the diagram of state of Sm2Te3–GeTe system has been constructed. The cutting is a guasibinary section of a triple system Ge-Te-Sm. At the ratio of initial tellurides 1:1 (50 mol %) and the temperature 1100 K according to peritectic
reaction m+Sm2Te3→GeSm2Te4 the triple complex GeSm2Te4 is formed. The liquidus of Sm2Te3–GeTe system consists of three branches, which are responsible for fusion (melting) of Sm2Te3, GeSm2Te4 and a-solid solutions based on GeTe. X-ray phase analysis of crystallized samples showed, that collection of X-ray refl ections corresponds to the phases Sm2Te3 – GeTe , GeSm2Te4 and у- solid solutions based on GeTe. In order to determine the dissolution of Sm2Te3 in GeTe there has been carried out additional burning of alloys 1,3,5 mol % Sm2Te3 at 920K (time of annealing – 340 hours). After annealing , according to the data of chemical analysis, the dissolution of Sm2Te3 in GeTe was 2 mol %. From practical point of view the obtained compound can be a perspective thermoelectrical material for making a positive branch of thermoelement.
Conclusions. Thus, the phase diagram Sm2Te3 – GeTe has been constructed. It has been established, that the cutting Sm2Te3 – GeTe is a quasibinary section of a triple system Ge –Te– Sm. In the system, at the ratio of initial tellurides 1:1 (50 mol %) an incongruently melting triple compound of in GeSm2Te4 composition is formed. On the base of GeTe a narrow fi eld of solid solution is formed.
- Kohri H., Shiota , Kato M., Ohsugi J., Goto T. Synthesis and Thermolelectric Properties of Bi2Te3–GeTe Pseudo Binary System. Advances in Science and Technology, 2006, v. 46, pp. 168-173. https://doi.org/10.4028/www.scientifi c.net/ST.46.168
- Gelbstein Y., Dado B., Ben-Yehuda O., Sadia Y., Dashevsky Z. and Dariel M. P. Highly effi cient Ge-Rich GexPb1-x Te thermoelectric alloys. Journal of Electronic Materials, 2010, v. 39(9), pp. 2049–2052. https://doi.org/10.1007/s11664-009-1012-z
- Gelbstein Y., Davidow J., Girard S.N., Chung D. Y. and Kanatzidis M. Controlling Metallurgical Phase Separation Reactions of the Ge0.87 Pb0.13Te Alloy for High Thermoelectric Performance. Advanced Energy Materials, 2013, v. 3, pp. 815–820. https://doi.org/10.1002/aenm.201200970
- Gelbstein Y., Dashevsky Z. and Dariel M. P. Highly efficient bismuth telluride doped p-type Pb0.13Ge0.87Te for thermoelectric applications. Physical Status Solidi, 2007, v. 1(6), pp. 232–234. https://doi.org/10.1002/pssr.200701160
- Gelbstein Y., Ben-Yehuda O., Dashevsky Z. and Dariel M. P. Phase transitions of p-type (Pb,Sn,Ge)Tebased alloys for thermoelectric applica tions. Journal of Crystal Growth, 2009, v. 311(18), pp. 4289–4292. https://doi.org/10.1007/s11664-008-0652-8
- Gelbstein Y., Ben-Yehuda O., Pinhas E., et al. Thermoelectric properties of (Pb,Sn,Ge) Te-based alloys. Journal of Electronic Materials, 2009, v. 38(7), 1478–1482. https://doi.org/10.1007/s11664-008-0652-8
- Li J., Chen Z., Zhang X., Sun Y., Yang J., Pei Y. Electronic origin of the high thermo- electric performance of GeTe among the p-type group IV monotellurides. NPG Asia Materials, 2017, v. 9, p. 353. https://doi.org/10.1038/am.2017.8
- Sante D. Di., Barone P., Bertacco R., Picozzi S. Electric control of the giant rashba effect in bulk GeTe. Advanced materials, 2013, v. 25(27), pp. 3625–3626. https://doi.org/10.1002/adma.201203199
- Li J., Zhang X., Lin S., Chen Z., Pei Y. Realizing the high thermoelectric performance of GeTe by Sbdoping and Se-alloying. Mater., 2017, v. 29(2), pp. 605–611. https://doi.org/10.1021/acs.chemmater.6b04066
- Abrikosov N. Kh., Shelimova L. B. Poluprovodnikovye materialy na osnove soedineniy AIV BVI. [Semiconductor materials based on compounds АIV В]. Moscow, Nauka Publ., 1975, 195 p. (in Russ.)
- Korzhuev M. A. Vliyaniye legirovaniya na parametric of GeTe. Series 6. [Effect of doping on GeTe Series 6]. Moscow, 1983, no. 6 (179), pp. 33–36. (in Russ.)
- Okoye I. Electronic and optical properties of SnTe and GeTe. Journal of Physics: Condensed Matter, 2002, 14(36), pp. 8625–8637. https://doi.org/10.1088/0953-8984/14/36/318
- Gelbstein Y., Rosenberg Y., Sadia Y. and Dariel M. P. Thermoelectric properties evolution of spark plasma sintered (Ge0.6Pb0.3Sn0.1)Te following a spinodal decomposition. Journal of Physical Chemistry, 2010, v. 114(30), pp. 13126–13131. https://doi.org/10.1021/jp103697s
- Rosenthal T., Schneider N., Stiewe C., Düblinger M., Oeckler O. Real Structure and thermoelectric properties of GeTe-rich germanium antimony tellurides. Mater., 2011, v. 23(19), pp. 4349–4356. https://doi.org/10.1021/cm201717z
- Li J., Chen Z., Zhang X., Yu H., Wu Z., Xie H., Chen Y., Pei Y. Simultaneous optimization of carrier concentration and alloy scattering for ultrahigh. Mater., 2017, v. 4(12), p. 341. https://doi.org/10.1002/advs.201700341
- Bletskan D. I. Phase equilibrium in the system AIV-BVI-part II: systems germanium-chalcogen. Journal of Ovonic Research, 2005, v. 1(5), p. 53–60.
- Li S. P., Li J. Q., Wang Q. B., Wang L., Liu F. S., Ao W. Q. Synthesis and thermoelectric properties of the (GeTe)1-x(PbTe)x alloys. Solid State Sciences, 2011, v. 13(2), pp. 399–403. https://doi.org/10.1016/j.solidstatesciences.2010.11.045
- Gelbstein Y., Dado B., Ben-Yehuda O., Sadia Y., Dashevsky Z., Dariel M. P. High thermoelectric fi gure of merit and nanostructuring in bulk p-type Gex(SnyPb1–y)1–x Te alloys following a spinodal decomposition reaction. Chemistry of Materials, 2010, v. 22(3), pp. 1054–1058. https://doi.org/10.1021/cm902009t
- Yarembash E. I., Eliseev A. A. Khal’kogenidy redkozemel’nykh elementov: sintez i kristallokhimiya [Chalcogenides of rare-earth elements: synthesis and crystal chemistry]. Moscow, Nauka Publ., 1975, p. 258. (in Russ.)
- Mukhtarova Z. M., Bakhtiyarly I. B., Azhdarova D. S. Politermicheskoye secheniye Ge0.80 Te0.20–Sm0.80 Te0.20. khim. zhurn., 2010, no. 4, pp. 144–146.
- Mukhtarova Z. M., Bakhtiyarly I. B., Azhdarova D. S. Issledovaniye politermicheskogo secheniye Ge0.84Te0.16–Sm5Ge2Te7 v troynoy sisteme Ge–Te–Sm. Aze-rb. khim. zhurn., 2011, no. 4, pp. 57–59.