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Evelina P. Domashevskaya

Academic degree, academic title, position:
Doctor of Physical and Mathematical Sciences, Professor, Head of the Department of Solid State Physics and Nanostructures of the Voronezh State University

Scientific specialty in accordance with Sc. D. Diploma:
01.04.07 – condensed matter physics

Key biography data:
1935 – year of birth
1957 – the end of the Physics Department, Voronezh State University
1967 – defense of candidate thesis in physical and mathematical sciences
1979 – defense of doctoral thesis in physical and mathematical sciences
1983 – awarded the title of professor
1999 – Academician of Russian Academy of Natural Sciences
2003 – Honored Scientist of the Russian Federation

Field of research interests:
Atomic and Electronic Structure; Condensed Matter Physics, Semiconductors and Heterostructures; Thin Films, Nanomaterials and Nanostructures; Methods of Diagnostics of Solids; Ultrasoft X-ray Spectroscopy; Diffraction, Synchrotron Radiation

Number of published works:
more than 500

The most significant publications:

  1. Solid State Sensory Structures on Silicon // Textbooks, 010 621.315.592 UDC: 538.91: 54, Voronezh: CPI VSU / 2010. 244 p. Co-authors: E.A. Tutov, S.V. Ryabtsev, A.V. Shaposhnik.
  2. Methods of Study of the Atomic Structure and Substructure Materials. Textbooks, 2nd izd. pererab. i additional .// Izd.VGTU, Voronezh. 2003.484 p. Co-authors: V.M. Ievlev, A.T. Kosilov, Yu.K. Kovneristy, et al.
  3. Physical Methods of Investigation of Thin Films and Surface Layers. Textbooks // Izd.VGU.Voronezh.2001.144 p. Co-authors: V.I. Kukuev and I.Ya. Mittova.
  4. Search Technology of Semiconductor Materials. V. 1. Electronic Structure and Properties of Semiconductors. Translated from English. ed. E.P. Domashevskaya. Voronezh. Ed -in Vodoley. 2004. 982 p.
  5. Search Technology of Semiconductor Materials. Tom I. Tehnologicheskie Processes. Translated from English. ed. E.P. Domashevskaya. Voronezh. Ed -in Vodoley. 2011. 919 p.
  6. Study of Surface Defects in Whiskers SnO2 by XANES and XPS // FTT. 2015. T. 57. № 1. P. 145 – 152. / Co-authors: O.A. Chuvenkova, S.V. Ryabtsev, Y.A. Yurakov, A.E. Popov, D.A. Koyuda, D.N. Nesterov, D.E. Spirin, R.Y. Ovsyannikov, S.Y. Turishchev.
  7. Theoretical and Experimental Study of the Electronic Structure of Tin Dioxide. // FTT. 2014. T. 56. № 9. P. 1690-1695. Co-authors: S.I. Kurgansky, M.D. Manyakin, O.I. Dubrovsky, O.A. Chuvenkova, S.Y. Turishchev.
  8. Synchrotron Research of Whiskers SnO2 // Surface. X-ray, Synchrotron and Neutron Research. 2014. V. 2. P. 18 – 24. / Co-authors: O.A. Chuvenkova, S.V. Ryabtsev, D.V. Vysotsky, A.E. Popov, Yu.A. Yurakov, O. Vylkov, R. Ovsyannikov, N. Appathurai, S. Yu. Turishchev.
  9. XPS-study of the Interatomic Interactions in the Surface Layer of Multilayer Nanostructures (Co45Fe45Zr10/α-Si)40 and (Co45Fe45Zr10/SiO2)32 // FTT. 2014. T. 56. № 11. P. 2219 – 2230. Co-authors: A.V. Chernyshev, S.Y. Turishchev, J.E. Kalinin, A.V. Sitnikov, D.E. Marchenko
  10. Electronic Structure of Undoped and Doped SnOx Nanolaye // THIN SOLID FILMS. 2013. V. 537. P. 137-144. Co-authors: O.A .Chuvenkova, S.V. Ryabtsev, Y.A .Yurakov,. V.M. Kashkarov, A.V. Shchukarev, S.Y. Turishchev.
  11. XANES Investigations of Interatomic Interactions in Multilayered Nanostructures (Co45Fe45Zr10 / α-Si) (40) and (Co45Fe45Zr10 / SiO2) (32). // PHYSICS OF THE SOLID STATE. 2013. V. 55. Iss. 6. P. 1294 -1303. Co-authors: A.V. Chernyshev, S.Y. Turishchev, Y.E. Kalinin, A.V. Sitnikov, D.E. Marchenko.
  12. Structural Features and Surface Morphology of AlxGayIn1-x-yAszP1-z / GaAs (100) Heterostructures // APPLIED SURFACE SCIENCE. 2013. V. 267. P. 181-184. Co-authors: P.V. Seredin, A.V. Glotov, I.N. Arsentyev, D.A Vinokurov,. I.S. Tarasov.
  13. Synchrotron Investigations of Si / Mo / c-Si (100) Multilayer Nanoperiodic Structures // PHYSICS OF THE SOLID STATE. 2013. V. 55. Iss. 3. P.634-641. Co-authors: V.A. Terekhov, S.Y. Turishchev, D.A. Koyuda, N.A. Rumyantseva, Y.P. Pershin, V.V. Kondratenko, N. Appathura.
  14. Investigations of Porous Silicon with Deposited 3d-Metals by Auger- and Ultrasoft X-Ray Emission Spectroscopy // JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. 2012. V. 12. Iss. 11. P. 8806-8810. Co-authors: A.S. Lenshin, V.M. Kashkarov, I.N. Shabanova, N.A. Terebova
  15. Interference Phenomena of Synchrotron Radiation in TEY Spectra for Silicon-on-Insulator Structure // Journal of Synchrotron Radiation. 2012. V. 19. P. 609 - 618. Co-authors: M.A. Andreeva, E.E. Odintsova, V.A. Terekhov, S.Yu. Turishchev.
  16. Atomic and Electronic Structure of Amorphous and Nanocrystalline Layers of Semi-Insulating Silicon Produced by Chemical-Vapor Deposition at Low Pressures // JOURNAL OF SURFACE INVESTIGATION. 2015. V. 9. No 6.  P. 1228-1236. Co-authors:  Terekhov V. A., Turishchev S. Yu., et al.
  17. Investigations of the Composition of Macro-, Micro- and Nanoporous Silicon Surface by Ultrasoft X-ray Spectroscopy and X-ray Photoelectron Spectroscopy // APPLIED SURFACE SCIENCE. 2015. V. 359. P. 550-559. Co-authors:  Lenshin A. S., Kashkarov V. M., et al.
  18. Deep Centers at the Interface in In2x Ga 2(1-x)Te3/InAs and In2Te3/InAs Heterostructures // SEMICONDUCTORS. 2016. V. 50. No 3. P. 309-313. Co-authors:  Mikhailyuk E. A., Prokopova T. V., et al.
  19. The Electronic Structure Peculiarities of a Strained Silicon Layer in Silicon-on-Insulator: Experimental and Theoretical Data // APPLIED SURFACE SCIENCE. 2016. V. 382. P. 331-335. Co-authors: Terekhov V. A., Nesterov D. N.,et al.
  20. Composition of Nanocomposites Based on Thin Layers of Tin on Porous Silicon Formed by Magnetron Sputtering // PHYSICA B-CONDENSED MATTER. 2017. V. 504. P. 1-8. Co-authors: Lenshin A. S., Kashkarov V. M., et al.
  21. Specific Features of the Atomic Structure of Metallic Layers of Multilayered (CoFeZr/SiO2)(32) and (CoFeZr/a-Si)(40) Nanostructures With Different Interlayers // PHYSICS OF THE SOLID STATE. 2017. V. 59. No 2. P. 385-391. Co-authors: Guda A. A., Chernyshev A. V.,et al.
  22. Formation of Silicon Nanocrystals in Multilayer Nanoperiodic a-SiOx/Insulator Structures from the Results of Synchrotron Investigations // SEMICONDUCTORS. 2017. V. 51. No 3. P. 349-352. Co-authors: Turishchev S. Yu., Terekhov V. A., Koyuda D. A., et al.
  23. Electronic Structure and Phase Composition of Silicon Oxide in the Metal-Containing Composite Layers of a [(Co40Fe40B20)(34)(SiO2)(66)/C](46) Multilayer Amorphous Nanostructure with Carbon Interlayers // INORGANIC MATERIALS. 2017. V. 53. No. 9. P. 930-936. Co-authors: Builov N. S., Terekhov V. A., et al.

The number of qualified candidates and doctors of science:
12 doctors and 40 candidates of sciences

Delivered courses:
Condensed matter physics; Crystallography and Crystalophysics; Electronic Structure of Solids

Organizational and social work:

  1. Deputy Chairman of the Dissertation Council D 212.038.10.
  2. Deputy Chairman of the Dissertation Council D 212.037.06.
  3. Member of the Dissertation Council D 212.038.06.
  4. Member of VSU Academic Council
  5. Member of the Scientific Board of the Faculty of Physics, Voronezh State University
  6. Member of editorial board of the journal "CONDENSED MATTER AND INTERPHASES"
  7. Member of the Educational and Methodological Association of Russian Universities in the section "Chemistry, physics and mechanics of substances and materials" at MSU
  8. Member of the Training Council for the technical areas at SPbGEU "LETI"



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