Electrophysical properties of PIN photodiodes of the 2.2-2.6 μm range based on InGa(Al)As/InP heterostructures with a metamorphic buffer layer

Elena I. Vasilkova; Evgeny V. Pirogov; Kseniya Yu. Shubina; Kirill O. Voropaev; Аndrey А. Vasil’ev; Leonid Ya. Karachinsky; Innokenty I. Novikov; Oleg V. Barantsev; Maxim S. Sobolev

doi:10.17308/kcmf.2024.26/12216

Elena I. Vasilkova Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation https://orcid.org/0000-0002-0349-7134
Evgeny V. Pirogov Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation https://orcid.org/0000-0001-7186-3768
Kseniya Yu. Shubina Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation https://orcid.org/0000-0003-1835-1629
Kirill O. Voropaev JSC “OKB-Planeta”, 13a, room 1n Bolshaya Moskovskaya st., Velikiy Novgorod 173004, Russian Federation https://orcid.org/0000-0002-6159-8902
Аndrey А. Vasil’ev JSC “OKB-Planeta”, 13a, room 1n Bolshaya Moskovskaya st., Velikiy Novgorod 173004, Russian Federation https://orcid.org/0009-0009-2615-6795
Leonid Ya. Karachinsky Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; ITMO University 49, bldg. A Kronverksky pr., Saint Petersburg 197101, Russian Federation https://orcid.org/0000-0002-5634-8183
Innokenty I. Novikov Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; ITMO University 49, bldg. A Kronverksky pr., Saint Petersburg 197101, Russian Federation https://orcid.org/0000-0003-1983-0242
Oleg V. Barantsev Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation https://orcid.org/0009-0001-6873-8488
Maxim S. Sobolev Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation https://orcid.org/0000-0001-8629-2064

DOI: https://doi.org/10.17308/kcmf.2024.26/12216

Keywords: Molecular beam epitaxy, Metamorphic buffer layers, Near IR photodetectors, Current-voltage characteristic, Capacitance–voltage characteristic, Dark currents

Abstract

Due to a large number of applications in the near and short-wave IR spectrum and a relatively high detectivity, PIN photodiodes based on epitaxial InGa(Al)As/InP heterostructures are of a great scientific interest. The operational spectral range of such photodetectors is up to 2.6 μm. However, to reach such wavelengths it is necessary to synthesize heterostructures with metamorphic buffer layers. In our study, we investigated the current-voltage and capacitance–voltage characteristics of PIN photodiodes based on InGa(Al)As/InP heterostructures with an original metamorphic buffer layer and an In_0.83Ga_0.17As
absorbing layer grown by means of molecular beam epitaxy.

The photodiode chips were formed using standard post-growth processing techniques. The diameter of the photosensitive area of the obtained diodes was 140 μm. The dark currents and the shunt resistance were ~ 300 nA and ~ 25 kΩ at the voltage of -10 mV respectively.

Therefore, the suggested metamorphic buffer layer effectively eliminates threading dislocations in the active area of the heterostructure. The obtained heterostructures with metamorphic buffer layers can be used to produce IR photodetectors for the spectral range of 2.2-2.6 μm

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Author Biographies

Elena I. Vasilkova, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation

postgraduate student, Engineer,
Alferov University (Saint Petersburg, Russian
Federation)

Evgeny V. Pirogov, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation

Researcher, Alferov University
(Saint Petersburg, Russian Federation)

Kseniya Yu. Shubina, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation

Cand. Sci. (Phys.–Math.),
Researcher, Alferov University (Saint Petersburg,
Russian Federation)

Kirill O. Voropaev, JSC “OKB-Planeta”, 13a, room 1n Bolshaya Moskovskaya st., Velikiy Novgorod 173004, Russian Federation

Head of the group, JSC “OKBPlaneta”
(Velikiy Novgorod, Russian Federation)

Аndrey А. Vasil’ev, JSC “OKB-Planeta”, 13a, room 1n Bolshaya Moskovskaya st., Velikiy Novgorod 173004, Russian Federation

Engineer-technologist, JSC
“OKB-Planeta” (Velikiy Novgorod, Russian Federation)

Leonid Ya. Karachinsky, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; ITMO University 49, bldg. A Kronverksky pr., Saint Petersburg 197101, Russian Federation

Dr. Sci. (Tech.), Сhief
Researcher, Alferov University; Leading Researcher,
ITMO University (Saint Petersburg, Russian
Federation)

Innokenty I. Novikov, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; ITMO University 49, bldg. A Kronverksky pr., Saint Petersburg 197101, Russian Federation

Cand. Sci. (Phys.–Math.),
Senior Researcher, Alferov University; Senior
Researcher, ITMO University (Saint Petersburg,
Russian Federation)

Oleg V. Barantsev, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation

student, Laboratory Assistant, ,
Alferov University (Saint Petersburg, Russian
Federation)

Maxim S. Sobolev, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation

Cand. Sci. (Phys.–Math.), Head
of the Laboratory, Alferov University (Saint Petersburg,
Russian Federation)

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