Growth of InGaAsSb/GaSb compound for infrared optoelectronic devices

Tien Dai Nguyen; J. O. Kim; S. J. Lee

doi:10.17308/kcmf.2022.24/9265

Tien Dai Nguyen Institute of Theoretical and Applied Research, Duy Tan University, Hanoi 100000, Vietnam; Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam https://orcid.org/0000-0002-9420-210X
J. O. Kim Metrology of Future Technology, Korea Research Institute of Standards and Science, Daejeon 34113, South Korea
S. J. Lee Metrology of Future Technology, Korea Research Institute of Standards and Science, Daejeon 34113, South Korea

DOI: https://doi.org/10.17308/kcmf.2022.24/9265

Keywords: InGaAsSb, MBE, Optoelectronic device, SWIR

Abstract

In this study, we report on the synthesis of InGaAsSb epi-layer for optoelectronic devices in short infrared wavelengths (SWIR) at room temperature (RT).

The InGaAsSb with lattice matched to GaSb substrate was grown by the molecular beam epitaxy (MBE) using the strain engineering. The structural and optical properties of InGaAsSb layer was investigated by high resolution X-ray diffractometer (XRD), and photoluminescence (PL). Devices with a 400×400 μm of size were fabricated using traditional photolithography and inductively coupled plasma etching. The spectral response of InGaAsSb photodetector with a 90% cutoff wavelength and electroluminescence spectra of light emitting diode (LED) obtained at 2.38 μm at an applied bias of –0.1 V and 2.25 μm with Jic = 500 mA, respectively at room temperature. Also, the spectral response of the detector indicates an increasing intensity and low noise when the temperature is high.

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Author Biographies

Tien Dai Nguyen, Institute of Theoretical and Applied Research, Duy Tan University, Hanoi 100000, Vietnam; Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

PhD in Advanced Materials
Science and Engineering, Lecturer/ Research at
Institute of Theoretical and Applied Research (ITAR)

J. O. Kim, Metrology of Future Technology, Korea Research Institute of Standards and Science, Daejeon 34113, South Korea

PhD in Physics; Senior Researcher,
Advanced Instrumentation Institute, Korea Research
Institute of Standards and Science (Yuseong-gu,
Daejeon, South Korea).

S. J. Lee, Metrology of Future Technology, Korea Research Institute of Standards and Science, Daejeon 34113, South Korea

PhD in Physics, Principal Research
Scientist, Korea Research Institute Standards and
Science (KRISS) Associate Professor at University of
Science and Technology (UST) (Yuseong-gu, Daejeon,
South Korea).

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