О механизме рекристаллизации халькогенидов висмута при фотонной обработке некогерентным излучением
Аннотация
Цель работы: Выявление природы и систематизация механизмов формирования градиентной структуры в приповерхностном слое халькогенида висмута при фотонной обработке некогерентным излучением ксеноновых ламп.
Экспериментальная часть: Методами просвечивающей электронной микроскопии, рентгеновской дифрактометрии, фотометрии исследованы полупроводниковые термоэлектрические ветви на основе твердых растворов Bi2Te3−Bi2Se3. Рассмотрена природа наноструктурирования и формирования градиентного слоя в приповерхностной области термоэлектрика Bi2Te3-хSeх при фотонной обработке некогерентным излучением ксеноновых ламп.
Выводы: Показано, что эти процессы могут быть обусловлены последовательностью самостоятельных процессов: ростом концентрации свободных электронов, снижением порога дефектообразования, локализация в скин-слое высокого градиента температуры, генерацией и распространением звуковых фононов, собирательной и вторичной рекристаллизацией, образованием нанокристаллической фазы в системе Bi-Te-Se
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Литература
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