ТЕРМИЧЕСКОЕ ОКСИДИРОВАНИЕ КАК СПОСОБ СОЗДАНИЯ НАНОРАЗМЕРНЫХ ФУНКЦИОНАЛЬНЫХ ПЛЕНОК НА ПОЛУПРОВОДНИКАХ AIIIBV: ВОЗДЕЙСТВИЕ НАНЕСЕННЫХ СЛОЕВ МЕТАЛЛОВ
Аннотация
Очерчен круг проблем, не позволяющих в полной мере реализовать огромный потенциал применения фосфида индия и арсенида галлия в твердотельной электронике. Проанализированы и обобщены классические и современные результаты по термическому оксидированию полупроводников AIIIBV, в том числе со стимуляцией процесса обработкой фотонами, магнитными импульсами и т.д. Особое внимание уделено рассмотрению фундаментального подхода к решению проблемы формирования наноразмерных функциональных пленок на AIIIBV, заключающегося в использовании обоснованно выбранных хемостимуляторов, вводимых в систему различными способами с целью изменения механизма процесса термооксидирования полупроводников с собственного на хемостимулированный. Это обеспечивает протекание новых интерфейсных реакций с кинетически сопряженными и гетерогенно-каталитическими стадиями, что позволяет в едином процессе осуществить кинетический обход нежелательных стадий собственного оксидирования, снизить рабочие параметры (температура, время) процесса формирования пленок и одновременно управлять составом и свойствами функциональных пленок нанометрового диапазона толщины с достижением целевых характеристик.
Исследования проведены с использованием оборудования Центра коллективного пользования научным оборудованием Воронежского госуниверситета.
Благодарность к. ф-м. н., доценту Лукину А.Н. за исследование методом ИКС.
Работа поддержана грантом РФФИ № 18-03-00354 а.
Скачивания
Литература
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