Structure and composition of a composite of porous silicon with deposited copper

  • Alexander S. Lenshin Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation; Voronezh State University of Engineering Technologies, Revolution Avenue, 19, Voronezh 394036, Russian Federation https://orcid.org/0000-0002-1939-253X
  • Kseniya B. Kim Voronezh State University of Engineering Technologies, Revolution Avenue, 19, Voronezh 394036, Russian Federation https://orcid.org/0000-0001-5564-8267
  • Boris L. Agapov Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation
  • Vladimir M. Kashkarov Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation https://orcid.org/0000-0001-9460-9244
  • Anatoly N. Lukin Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation https://orcid.org/0000-0001-6521-8009
  • Sabukhi I. Niftaliyev Voronezh State University of Engineering Technologies, Revolution Avenue, 19, Voronezh 394036, Russian Federation https://orcid.org/0000-0001-7887-3061
Keywords: Porous silicon, Composites, Copper, Ultrasoft X-ray emission Spectroscopy, Electronic structure

Abstract

    Porous silicon is a promising nanomaterial for optoelectronics and sensorics, as it has a large specific surface area and is photoluminescent under visible light. The deposition of copper particles on the surface of porous silicon will greatly expand the range of applications of the resulting nanocomposites. Copper was chosen due to its low electrical resistivity and high resistance to electromigration compared to other metals. The purpose of this research was to study changes in the structure and composition of porous silicon after the chemical deposition of copper.
    Porous silicon was obtained by the anodisation of monocrystalline silicon wafers KEF (100) (electronic-grade phosphorus-doped silicon) with an electrical resistivity of 0.2 Ohm·cm. An HF solution in isopropyl alcohol with the addition of H2O2 solution was used to etch the silicon wafers. The porosity of the samples was about 70 %. The porous silicon samples were immersed in copper sulphate solution (CuSO4·5H2O) for 7 days. We used scanning electron microscopy, IR spectroscopy, and ultrasoft X-ray emission spectroscopy to obtain data on the morphology and composition of the initial sample and the sample with deposited copper. The chemical deposition of copper on porous silicon showed a significant distortion of the pore shape as well as the formation of large cavities inside the porous layer. However, in the lower part the pore morphology remained the same as in the original sample. It was found that the chemical deposition of copper on porous silicon leads to copper penetrating into the porous layer, the formation of a composite structure, and it prevents the oxidation of the porous layer during storage. Thus, it was demonstrated that the chemical deposition of copper on a porous silicon surface leads to visible changes in the surface morphology and composition. Therefore, it should have a significant impact on the catalytic, electrical, and optical properties of the material.

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Author Biographies

Alexander S. Lenshin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation; Voronezh State University of Engineering Technologies, Revolution Avenue, 19, Voronezh 394036, Russian Federation

Dr. Sci. (Phys.–Math.), Leading Researcher, Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation)

Kseniya B. Kim, Voronezh State University of Engineering Technologies, Revolution Avenue, 19, Voronezh 394036, Russian Federation

Cand. Sci. (Chem.), Associate Professor, Department of Inorganic Chemistry and Chemical Technology, Voronezh State University of Engineering Technologies (Voronezh, Russian Federation)

Boris L. Agapov, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

Cand. Sci. (Tech.), Centre for Collective Use of Scientific Equipment, Voronezh State University (Voronezh, Russian Federation)

Vladimir M. Kashkarov, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

Cand. Sci. (Phys.–Math.), Associate Professor, Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation)

Anatoly N. Lukin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

Cand. Sci. (Phys.–Math.), Associate Professor, Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation)

Sabukhi I. Niftaliyev, Voronezh State University of Engineering Technologies, Revolution Avenue, 19, Voronezh 394036, Russian Federation

Dr. Sci. (Chem.), Professor, Head of the Department of Inorganic Chemistry and Chemical Technology, Voronezh State University of Engineering Technologies (Voronezh, Russian Federation)

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Published
2023-07-07
How to Cite
Lenshin, A. S., Kim, K. B., Agapov, B. L., Kashkarov, V. M., Lukin, A. N., & Niftaliyev, S. I. (2023). Structure and composition of a composite of porous silicon with deposited copper. Condensed Matter and Interphases, 25(3), 359-366. https://doi.org/10.17308/kcmf.2023.25/11259
Section
Original articles

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