Modern scientific and practical approaches to the production of substrates from semiconductor compounds А3В5. Review

  • Elena N. Abramova АО «Giredmet» PAO «Rosatom», 2-1 Electrodnaya st., Moscow 111524, Russian Federation
  • Roman Yu. Kozlov АО «Giredmet» PAO «Rosatom», 2-1 Electrodnaya st., Moscow 111524, Russian Federation
  • Anatoliy I. Khokhlov АО «Giredmet» PAO «Rosatom», 2-1 Electrodnaya st., Moscow 111524, Russian Federation
  • Yuriy V. Syrov АО «Giredmet» PAO «Rosatom», 2-1 Electrodnaya st., Moscow 111524, Russian Federation
  • Yuriy N. Parkhomenko National University of Science and Technology MISIS 4-1 Leninskiy prospekt, Moscow 119049, Russian Federation
Keywords: Semiconductor plates, А3В5 materials, Machining, Polishing, Chemical mechanical polishing, Surface passivation


Modern electronic and optical engineering uses А3В5 single-crystal semiconductor materials (GaAs, GaSb, InAs, InSb, and InP) as substrates for epitaxial growth. These materials are obtained in the form of massive single-crystal ingots. Therefore, technologies for processing of these A3B5 wafers are developed to produce the substrates for epitaxial growth. The miniaturization of modern systems and devices demands the high quality of the substrates surface. One of the main criteria is a low surface roughness (Ra) (of about 0.5 nm). To meet this requirement, it is necessary to elaborate the existing methods of surface treatment.

The review analyses the current approaches to the treatment of the surface of semiconductor wafers of А3В5 single-crystal materials. It considers the specifics of wafers machining followed by their polishing. The article also presents an analysis of the polishing methods. It reveals that at the moment the chemical-mechanical polishing of А3В5 wafers is the most commonly used method. The review presents the main parameters of this process and systematizes the existing theoretical approaches. The analysis determined the key tendencies in the development of chemical-mechanical polishing of semiconductor А3В5 wafers aimed at increasing the quality of wafers. The article also analyses the latest studies regarding the methods of chemical polishing as an alternative to chemical-mechanical polishing. The next section focuses on surface
passivation methods used upon obtaining wafers with a low roughness. Passivation is performed to reduce the reactivity of the surface and stabilize surface states of wafers.

A classification of passivation methods is suggested based on the obtained chemical composition of the surface, when the passivation layers are created using oxidation, sulfidizing, or nitriding. Another classification is based on the method of creating passivating coatings and includes wet chemical methods and physico-chemical methods


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Author Biographies

Elena N. Abramova, АО «Giredmet» PAO «Rosatom», 2-1 Electrodnaya st., Moscow 111524, Russian Federation

Cand. Sci. (Chem.), Research Fellow, AO «Giredmet», PAO «Rosatom» (Moscow, Russian Federation)

Roman Yu. Kozlov, АО «Giredmet» PAO «Rosatom», 2-1 Electrodnaya st., Moscow 111524, Russian Federation

4th year PhD student NUST
MISIS, Head of the Laborarory AO «Giredmet», PAO
«Rosatom» (Moscow, Russian Federation)

Anatoliy I. Khokhlov, АО «Giredmet» PAO «Rosatom», 2-1 Electrodnaya st., Moscow 111524, Russian Federation

Cand. Sci. (Tech.), Research
Fellow, AO «Giredmet», PAO «Rosatom» (Moscow,
Russian Federation)

Yuriy V. Syrov, АО «Giredmet» PAO «Rosatom», 2-1 Electrodnaya st., Moscow 111524, Russian Federation

Cand. Sci. (Phis.-Math.), Research
Fellow, AO «Giredmet», PAO «Rosatom» (Moscow,
Russian Federation)

Yuriy N. Parkhomenko, National University of Science and Technology MISIS 4-1 Leninskiy prospekt, Moscow 119049, Russian Federation

Dr. Sci. (Phys.–Math.),
Professor, Department of Materials Science of
Semiconductors and Dielectrics, NUST MISIS (Moscow,
Russian Federation)


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How to Cite
Abramova, E. N., Kozlov, R. Y., Khokhlov, A. I., Syrov, Y. V., & Parkhomenko, Y. N. (2024). Modern scientific and practical approaches to the production of substrates from semiconductor compounds А3В5. Review. Condensed Matter and Interphases, 26(1), 3-24.