Современные научные и практические решения в технологии изготовления подложек полупроводниковых соединений А3В5. Обзор
Аннотация
Сегодня в электронном и оптическом приборостроении в качестве подложек для эпитаксиального роста широко используются монокристаллические полупроводниковые материалы А3В5 – GaAs, GaSb, InAs, InSb, InP. Данные материалы получают в виде массивных монокристаллических слитков. В связи с этим именно для них разрабатываются технологии изготовления и обработки пластин, используемых в качестве подложек для операций эпитаксиального роста. Миниатюризация современных систем и приборов обуславливает высокие требования к качеству поверхности этих подложек. Одним из основных критериев является низкая шероховатость (Ra) поверхности порядка 0.5 нм. Достижение таких значений требует усовершенствования методов обработки поверхности.
В статье проанализированы современные подходы к обработке поверхности полупроводниковых пластин моно-кристаллических материалов А3В5. Рассмотрены особенности шлифовки полупроводниковых пластин как этапа, предшествующего полировке. Проведен анализ методов полировки и установлено, что наибольшее развитие и распространение сегодня имеет химико-механическая полировка пластин А3В5, для которой рассмотрены основные параметры и систематизированы теоретические подходы. Выявлены ключевые тенденции развития технологии
химико-механической обработки полупроводниковых пластин А3В5 для получения пластин высокого качества. Приведены и проанализированы современные исследования различных методик химической полировки, как возможного аналога химико-механической обработки поверхности. Также рассмотрены методики пассивации поверхности после получения пластин с низкой шероховатостью. Пассивацию проводят для снижения реакционной способности поверхности и стабилизации электронных состояний в приповерхностных слоях пластины.
Предложено классифицировать подходы к пассивации на основе получаемого химического состава поверхности, когда пассивирующие слои создают при помощи окисления, сульфидирования, нитрирования. Также предложена классификация по способам создания пассивирующих покрытий с выделением химических методов при обработке поверхности в растворах и физико-химических методов
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