On the mechanism of recrystallization of bismuth chalcogenides during photonic treatment with incoherent radiation
Abstract
Purpose: The aim of this work is to reveal the nature and systematize the mechanisms of gradient structure formation in the surface layer of bismuth chalcogenide during photon treatment with incoherent radiation from xenon lamps.
Experimental: Semiconductor thermoelectric branches based on Bi2Te3−Bi2Se3 solid solutions have been investigated by transmission electron microscopy, X-ray diffractometry, and photometry methods. The nature of nanostructuring and formation of gradient layer in the surface region of Bi2Te3–хSeх thermoelectric at photon treatment by incoherent radiation of xenon lamps is considered.
Conclusions: It is shown that these processes can be caused by a sequence of independent processes: growth of free electron concentration, decrease of defect formation threshold, localization in skin layer of high temperature gradient, generation and propagation of sonic phonons, collecting and secondary recrystallization, formation of nanocrystalline phase in Bi-Te-Se system
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