TSF-MOCVD – a novel technique for chemical vapour deposition on oxide thin films and layered heterostructures

  • Andrey R. Kaul Lomonosov Moscow State Univеrsity, 1 Leninskie Gory, Moscow 119991, Russian Federation https://orcid.org/0000-0002-3582-3467
  • Roy R. Nygaard Lomonosov Moscow State Univеrsity, 1 Leninskie Gory, Moscow 119991, Russian Federation https://orcid.org/0000-0002-2296-8069
  • Vadim Yu. Ratovskiy Lomonosov Moscow State Univеrsity, 1 Leninskie Gory, Moscow 119991, Russian Federation https://orcid.org/0000-0003-1657-110X
  • Alexander L. Vasiliev National Research Center “Kurchatov University”, 1 pl. Akademika Kurchatova, Moscow 123182, Russian Federation; Shubnikov Crystallography Institute of the Russian Academy of Sciences, 59 Leninskiy prospect, Moscow 119333, Russian Federation; Moscow Institute of Physics and Technology, 9 Institutskiy Pereulok, Moscow Region, Dolgoprudny, 141701, Russian Federation https://orcid.org/0000-0001-7884-4180
Keywords: Thread-solution feed, TSF, MOCVD, Epitaxy, Thin films, Heterostructures

Abstract

A new principle for supplying volatile precursors to MOCVD gas-phase chemical deposition systems is proposed, based on a two-stage evaporation of an organic solution of precursors from a soaked cotton thread, which passes sequentially through the zones of evaporation of the solvent and precursors. The technological capabilities of TSF-MOCVD (Thread-Solution Feed MOCVD) are demonstrated based on examples of obtaining thin epitaxial films of СеО2, h-LuFeO3 and thin-film heterostructures β-Fe2O3/h-LuFeO3. The results of studying the obtained films by X-ray diffraction, energy dispersive X-ray
analysis, and high- and low-resolution transmission microscopy are presented. Using the TSF module, one can finely vary the crystallisation conditions, obtaining coatings of the required degree of crystallinity, as  evidenced by the obtained dependences of the integral width of the h-LuFeO3 reflection on the film growth rate. Based on the TEM and XRD data, it was concluded that β-Fe2O3 grows epitaxially over the h-LuFeO3 layer. Thus, using TSF-MOCVD, one can flexibly change the composition of layered heterostructures and obtain highly crystalline epitaxial films with a clear interface in a continuous deposition process

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Author Biographies

Andrey R. Kaul, Lomonosov Moscow State Univеrsity, 1 Leninskie Gory, Moscow 119991, Russian Federation

DSc in Chemistry, Full Professor at
the Chair of Inorganic Chemistry, Lomonosov Moscow
State University, Moscow, Russian Federation;
arkaul@mail.ru

Roy R. Nygaard, Lomonosov Moscow State Univеrsity, 1 Leninskie Gory, Moscow 119991, Russian Federation

Junior Research Fellow at the Chair
of Inorganic Chemistry, Lomonosov Moscow State
University, Moscow, Russian Federation; e-mail:
rnygaard@mail.ru

Vadim Yu. Ratovskiy, Lomonosov Moscow State Univеrsity, 1 Leninskie Gory, Moscow 119991, Russian Federation

student at the Higher School
of Material Science, Lomonosov Moscow State
University, Moscow, Russian Federation; e-mail:
vratovskiy@bk.ru

Alexander L. Vasiliev, National Research Center “Kurchatov University”, 1 pl. Akademika Kurchatova, Moscow 123182, Russian Federation; Shubnikov Crystallography Institute of the Russian Academy of Sciences, 59 Leninskiy prospect, Moscow 119333, Russian Federation; Moscow Institute of Physics and Technology, 9 Institutskiy Pereulok, Moscow Region, Dolgoprudny, 141701, Russian Federation

PhD in Physics and
Mathematics, Associate Professor at the Faculty of
NBICS, Moscow Institute of Physics and Technology,
Moscow, Russian Federation; email: a.vasiliev56@gmail.com

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Published
2021-08-17
How to Cite
Kaul, A. R., Nygaard, R. R., Ratovskiy, V. Y., & Vasiliev, A. L. (2021). TSF-MOCVD – a novel technique for chemical vapour deposition on oxide thin films and layered heterostructures. Kondensirovannye Sredy I Mezhfaznye Granitsy = Condensed Matter and Interphases, 23(3), 396-405. https://doi.org/10.17308/kcmf.2021.23/3531
Section
Original articles