MOCVD and ferromagnetic resonance of epitaxial Lu3Fe5O12 films for high-frequency applications

Authors

  • Abduvosit A. Hafizov Lomonosov Moscow State University, 1. Leninskie Gory, Moscow 119991, Russian Federation
  • Maria N. Markelova Lomonosov Moscow State University, 1. Leninskie Gory, Moscow 119991, Russian Federation
  • Ruoxuan Gu Lomonosov Moscow State University, 1. Leninskie Gory, Moscow 119991, Russian Federation
  • Igor E. Graboy Lomonosov Moscow State University, 1. Leninskie Gory, Moscow 119991, Russian Federation
  • Vadim A. Amelichev S-Innovations, 20-2. Nauchniy Proezd, Moscow117246, Russian Federation
  • Dmitry A. Volkov Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 11-7 Mokhovaya st., Moscow 125009, Russian Federation , National Research University Moscow Power Engineering Institute, 14-1, Krasnokazarmennaya st., Moscow 111250, Russia
  • David A. Gabrielyan Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 11-7 Mokhovaya st., Moscow 125009, Russian Federation , National Research University Moscow Power Engineering Institute, 14-1, Krasnokazarmennaya st., Moscow 111250, Russia
  • Ansar R. Safin Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 11-7 Mokhovaya st., Moscow 125009, Russian Federation , National Research University Moscow Power Engineering Institute, 14-1, Krasnokazarmennaya st., Moscow 111250, Russia
  • Sergey A. Nikitov Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 11-7 Mokhovaya st., Moscow 125009, Russian Federation
  • Andrey R. Kaul Lomonosov Moscow State University, 1. Leninskie Gory, Moscow 119991, Russian Federation

DOI:

https://doi.org/10.17308/kcmf.2026.28/13564

Keywords:

Thin films, Iron garnet, MOCVD, Structure, Ferrimagnetic resonance

Abstract

Objectives: The production of thin films of rare earth iron garnets with a narrower ferrimagnetic resonance (FMR) linewidth is extremely important in the development of spintronic materials. Among rare earth iron garnets, the compound Lu3Fe5O12, which has the highest saturation magnetization, is promising. The aim of this work is to study the dependence of the FMR linewidth of Lu3Fe5O12 iron garnet films on the lattice mismatch between the film and the substrate, as well as on the film thickness during their production by metalorganic chemical vapor deposition (MOCVD).

Experimental: Thin films of Lu3Fe5O12 garnet were obtained by MOCVD technique on isostructural single-crystal substrates of Nd3Ga5O12(111), Gd3Ga5O12(111), Gd3Ga5O12(210), Gd3(AlGa4)O12(111) and Y3Al5O12(111). The films were studied by XRD, EDX, and FMR methods. The dependences of the FMR linewidth on the mismatch of the unit cell (UC) parameters of the garnet at the film–substrate interface, substrate orientation, and film thickness were studied.

Conclusions: It has been established that the minimum FMR linewidth (ΔН) of Lu3Fe5O12 films is achieved on substrates with minimal mismatch at the interface. The dependence of ΔН on film thickness is shown to be extreme, with the minimum corresponding to a film thickness at which significant relaxation of epitaxial stresses has occurred, but the concentration of defects characteristic of the polycrystalline state is still low. Taking these factors into account will make it possible to obtain iron garnet films with a narrower ferromagnetic resonance linewidth, which can subsequently be used in various areas of spintronics as sensitive elements in microwave detectors

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Author Biographies

  • Abduvosit A. Hafizov, Lomonosov Moscow State University, 1. Leninskie Gory, Moscow 119991, Russian Federation

    graduate student at the Higher School of Material Science, Lomonosov Moscow State University (Moscow, Russian Federation)

  • Maria N. Markelova, Lomonosov Moscow State University, 1. Leninskie Gory, Moscow 119991, Russian Federation

    Cand. Sci. (Chem.), Research Fellow at the Department of Chemistry, Lomonosov Moscow State University (Moscow, Russian Federation)

  • Ruoxuan Gu, Lomonosov Moscow State University, 1. Leninskie Gory, Moscow 119991, Russian Federation

    master degree student at the Higher School of Material Science, Lomonosov Moscow State University (Moscow, Russian Federation)

  • Igor E. Graboy, Lomonosov Moscow State University, 1. Leninskie Gory, Moscow 119991, Russian Federation

    Cand. Sci. (Chem.), Senior Research Fellow at the Department of Chemistry, Lomonosov Moscow State University (Moscow, Russian Federation)

  • Vadim A. Amelichev, S-Innovations, 20-2. Nauchniy Proezd, Moscow117246, Russian Federation

    Cand. Sci. (Chem.), Technical Director at S-Innovations (Moscow, Russian Federation)

  • Dmitry A. Volkov, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 11-7 Mokhovaya st., Moscow 125009, Russian Federation, National Research University Moscow Power Engineering Institute, 14-1, Krasnokazarmennaya st., Moscow 111250, Russia

    Junior Researcher at the Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences; Assistant at Moscow Power Engineering Institute (Moscow, Russian Federation)

  • David A. Gabrielyan, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 11-7 Mokhovaya st., Moscow 125009, Russian Federation, National Research University Moscow Power Engineering Institute, 14-1, Krasnokazarmennaya st., Moscow 111250, Russia

    Junior Researcher at the Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences; Assistant at Moscow Power Engineering Institute (Moscow, Russian Federation)

  • Ansar R. Safin, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 11-7 Mokhovaya st., Moscow 125009, Russian Federation, National Research University Moscow Power Engineering Institute, 14-1, Krasnokazarmennaya st., Moscow 111250, Russia

    Dr. Sci. (Phys.–Math.), Leading Researcher, Head of the Laboratory, Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences; Professor, Moscow Power Engineering University; Professor, Moscow Institute of Physics and Technology (National Research University); Professor, National Research University Higher School of Economics (Moscow, Russian Federation)

  • Sergey A. Nikitov, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 11-7 Mokhovaya st., Moscow 125009, Russian Federation

    Dr. Sci. (Phys.–Math.), Acting Director, Head of Laboratory, Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences; Head of Department, Moscow Institute of Physics and Technology (National Research University) (Moscow, Russian Federation); Head of Laboratory, N. G. Chernyshevsky Saratov National Research State University (Saratov, Russian Federation); Academician, Russian Academy of Sciences (Moscow, Russian Federation)

  • Andrey R. Kaul, Lomonosov Moscow State University, 1. Leninskie Gory, Moscow 119991, Russian Federation

    Kaul, Dr. Sci. (Chem.), Full Professor at the Chair of Inorganic Chemistry, Lomonosov Moscow State University, Moscow, Russian Federation

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Published

2026-04-01

Issue

Vol. 28 No. 1 (2026)

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Original articles

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Copyright (c) 2026 Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases

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How to Cite

MOCVD and ferromagnetic resonance of epitaxial Lu3Fe5O12 films for high-frequency applications. (2026). Kondensirovannye Sredy I Mezhfaznye Granitsy = Condensed Matter and Interphases, 28(1), 126-136. https://doi.org/10.17308/kcmf.2026.28/13564

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