Study of photoluminescence kinetics in bulk GaPN and GaPNAs layers on silicon substrates grown by molecular beam epitaxy

Ekaterina V. Nikitina; Andrey K. Kaveev; Evgeny V. Pirogov; Alexey M. Nadtochiy; Elena I. Vasilkova; Natalia V. Kryzhanovskaya; Maxim S. Sobolev

doi:10.17308/kcmf.2025.27/13019

Ekaterina V. Nikitina Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation; Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation https://orcid.org/0000-0002-6800-9218
Andrey K. Kaveev Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation https://orcid.org/0000-0002-3640-677X
Evgeny V. Pirogov Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation https://orcid.org/0000-0001-7186-3768
Alexey M. Nadtochiy HSE University Saint Petersburg, 16 Soyuz Pechatnikov st., St. Petersburg 194100, Russian Federation https://orcid.org/0000-0003-0982-907X
Elena I. Vasilkova Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation https://orcid.org/0000-0002-0349-7134
Natalia V. Kryzhanovskaya HSE University Saint Petersburg, 16 Soyuz Pechatnikov st., St. Petersburg 194100, Russian Federation https://orcid.org/0000-0002-4945-9803
Maxim S. Sobolev Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation https://orcid.org/0000-0001-8629-2064

DOI: https://doi.org/10.17308/kcmf.2025.27/13019

Keywords: Dilute nitrides, GaPN(As), Photoluminescence, Silicon substrate

Abstract

Objective: The aim of this work is to study bulk GaPN and GaPNAs layers grown by molecular beam epitaxy on silicon substrates. The optical properties of the heterostructures were investigated using photoluminescence. The technique of time-resolved photoluminescence (or photoluminescence kinetics) was employed to evaluate the carrier lifetime in bulk GaPN and GaPNAs layers.

Experimental: An investigation of the influence of the buffer layer on the heterostructure characteristics was conducted. The photoluminescence intensity in the bulk GaPN layer was found to be virtually identical for heterostructures employing either a buffer layer grown by Migration-Enhanced Epitaxy (MEE-GaP buffer) or a GaP buffer layer grown with a gradual temperature ramp from 450 to 600 °C.

Conclusion: It was shown that the lifetime of minority carriers in the bulk GaPN layer grown on a silicon substrate is determined to a greater extent by defects introduced during the nitrogen incorporation into the GaP lattice, rather than by defects caused by growth on silicon substrate

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Author Biographies

Ekaterina V. Nikitina, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation; Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

Cand. Sci. (Phys.–Math.), Lead Researcher, Alferov University (Saint Petersburg, Russian
Federation)

Andrey K. Kaveev, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation

Dr. Sci. (Phys.–Math.), Leading Researcher, Ioffe Institute (Saint-Petersburg, Russian Federation)

Evgeny V. Pirogov, Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

Researcher, Alferov University (Saint Petersburg, Russian Federation)

Alexey M. Nadtochiy, HSE University Saint Petersburg, 16 Soyuz Pechatnikov st., St. Petersburg 194100, Russian Federation

Cand. Sci. (Phys.–Math.), Leading Researcher, HSE University (Saint Petersburg, Russian Federation)

Elena I. Vasilkova, Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

postgraduate student, Engineer, Alferov University (Saint Petersburg, Russian Federation)

Natalia V. Kryzhanovskaya, HSE University Saint Petersburg, 16 Soyuz Pechatnikov st., St. Petersburg 194100, Russian Federation

Dr. Sci. (Phys.–Math.), Head of the laboratory, HSE University (Saint Petersburg, Russian Federation)

Maxim S. Sobolev, Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

Cand. Sci. (Phys.–Math.), Head of the Laboratory, Alferov University (Saint Petersburg, Russian Federation)

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