STRUCTURE AND COMPOSITION EVOLUTION a-Si/ZrO2 AND a-SiOx/ZrO2 MULTILAYERED NANOPERIODICAL STRUCTURES UNDER HIGH TEMPERATURE ANNEAL

  • Sergey Yu. Turishchev Dr. Sci. (Phys.-Math.), Associate Professor, Solid State Physic and Nanostructures Department, Voronezh State University, Voronezh, Russia; tel.: +7(473) 2208363, e-mail: tsu@phys.vsu.ru
  • Dmitry A. Koyuda Researcher, Joint Laboratory "Electronic Structure of Solids", Voronezh State University, Voronezh, Russia; tel.: +7(473) 2208363, e-mail: koyuda@phys.vsu.ru
  • Alexey V. Ershov Cand. Sci. (Phys.–Math.), Associate Professor, Department of Physics of Semiconductors and Optoelectronics, Lobachevsky State University of Nizhni Novgorod, Nizhny Novgorod, Russia; tel.: +7(831) 4623306, e-mail: ershov@phys.unn.ru
  • Ulii A. Vainer Engineer-Technologist, Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia; tel.: (831) 4385313, e-mail: vainer@ipm.sci-nnov.ru
  • Tatiana V. Kulikova Cand. Sci. (Phys.–Math.), Engineer, Physics of Semiconductors and Microelectronics Department, Voronezh State University, Voronezh, Russia; tel.: +7(908)1445155, e-mail: kaimt@mail.ru
  • Boris L. Agapov Cand. Sci. (Phys.–Math.), Center for Collective Use of Scientific Equipment, Voronezh State University, Voronezh, Russia; tel.: +7(473) 2281160, e-mail: b.agapov2010@yandex.ru
  • Elena N. Zinchenko Engineer, Center for Collective Use of Scientific Equipment, Voronezh State University, Voronezh, Russia; tel.:+7(473) 2281160, e-mail: ckp-vsu@mail.ru
  • Margarita V. Grechkina Leading Electronic, Physics of Semiconductors and Microelectronics Department, Voronezh State University, Voronezh, Russia; tel.: +7 (473) 2208633, e-mail: grechkina_m@mail.ru
  • Daria S. Usoltseva Cand. Sci. (Phys.–Math.), Solid State Physic and Nanostructures Department, Voronezh State University, Voronezh, Russia; tel.: +7(473) 2208363, e-mail: usolceva_ds@mail.ru
  • Vladimir A. Terekhov Dr. Sci. (Phys.-Math.), Full Professor, Solid State Physic and Nanostructures Department, Voronezh State University, Voronezh, Russia; tel.: +7(473) 2208363, e-mail: ftt@phys.vsu.ru
DOI: https://doi.org/10.17308/kcmf.2018.20/586
Keywords: multilayer nanoperiodal structures, nanocrystals, silicon, silicon oxides, phase composition, X-ray diffraction, atomic force microscopy, scanning electron microscopy.

Abstract

With the use of scanning electron microscopy, atomic force microscopy and X-ray diffraction the morphology, composition and structure evolution of a-Si/ZrO2 and a-SiOx/ZrO2 multilayered nanoperiodical structures subjected to high temperature annealing were investigated. Each ZrO2 layers thickness was 2 nm while for a-Si or a-SiOx layers thickness was 8 nm with total number of layers 34 (a-SiOx/ZrO2) and 43 (a-SiOx/ZrO2). Annealing was performed for 30 minutes at temperature of 1100 °С. multilayered nanoperiodical structures have grainy relief with comparable morphology and size characteristics without noticeable dependence on layers interleaving sequence and their composition. 30 minutes anneal at 1100 °С for a-SiOx/ZrO2 multilayered nanoperiodical structures did not transform their surface. Under the same temperature for a-Si/ZrO2 multilayered nanoperiodical structures we observed noticeable changes in samples surface morphology as irregularities formation with 100 nm width and height that exceeds bilayer thickness. By X-ray diffraction technique the presence of thin ZrSi2 silicide layer is demonstrated in a-Si/ZrO2 structures as the result of silicon chemical interaction with zirconium dioxide under high temperature treatment of nanoperiodical multilayers.

 ACKNOWLEDGMENTS

The work was supported by the Ministry of Education and Science of Russia within the framework of the state task for higher education organizations in science for 2017–2019. Project No. 16.8158.2017/8.9. Authors are grateful for I. A. Karabanova for methodical help in samples formation. The investigations results were obtained using resources of the Voronezh state university center for collective use of scientific equipment.

 

Downloads

Download data is not yet available.

References

1. Pavesi L., Turan R. Silicon Nanocrystals. WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei, 2010, 652 p. DOI: 10.1002/9783527629954
2. Ershov A. V., Tetelbaum D. I., Chugrov I. A., Mashin A. I., Mikhaylov A. N., Nezhdanov A.V., Ershov A. A., Karabanova I. A. Semiconductors, 2011, vol. 45, no. 6, p. 731. DOI: 10.1134/S1063782611060108
3. Grom G. F., Lockwood D. J., McCaffrey J. P., Labbé H. J., Fauchet P. M., White Jr. B., Deiner J., Kovalev D., Koch F., Tsybeskov L. Nature, 2000, vol. 407, p. 358. DOI: 10.1038/35030062
4. Zacharias M., Heitmann J., Scholz R., Kahler U., Schmidt M., Bläsing J. Appl. Phys. Lett., 2002, vol. 80, no. 4, p. 661. DOI: 10.1063/1.1433906
5. Ledoux G., Gong J., Huisken F., Guillois O., Reynaud C. Appl. Phys. Lett., 2002, vol. 80, no. 25, p. 4834. DOI: 10.1063/1.1485302
6. Sivakov V. A., Voigt F., Berger A., Bauer G., Christiansen S. H. Phys. Rev. B, 2010, vol. 82, p. 125446. DOI: 10.1103/PhysRevB.82.125446
7. Turishchev S. Yu., Terekhov V. A., Nesterov D. N., Koltygina K. G., Spirin D. E., Parinova E. V., Koyuda D. A., Schleusener A., Sivakov V., Domashevskaya E. P. Condensed Matter And Interphases, 2016, vol. 18, no. 1, p. 130. (in Russ.)
8. Mangolini L., Thimsen E., Kortshagen U. Nanoletters, 2005, vol. 5, no. 4, p. 655. DOI: 10.1021/nl050066y
9. Terekhov V. A., Turishchev S. Yu., Pankov K. N., Zanin I. E., Domashevskaya E. P., Tetelbaum D. I., Mikhailov A. N., Belov A. I., Nikolichev D. E., Zubkov S. Yu. Surface and Interface Analysis, 2010, vol. 42, no. 6-7, p. 891. DOI: 10.1002/sia.3338
10. Ledoux G., Guillois O., Porterat D., Reynaud C., Huisken F., Kohn B., Paillard V.
1. Phys. Rev. B, 2000, vol. 62, p. 15942. DOI: 10.1103/PhysRevB.62.15942
11. Terekhov V. A., Kashkarov V. M., Turishchev S. Yu., Pankov K. N., Volodin V. A., Efremov M. D., Marin D. V., Cherkov A. G., Goryainov S. V., Korchagin A. I., Cherepkov V. V., Lavrukhin A. V., Fadeev S. N., Salimov R. A., Bardakhanov S. P. Journal of Materials Science and Engineering B, 2008, vol. 147, no. 2 – 3, p. 222. DOI: 10.1016/j.mseb.2007.08.014
12. Ershov A. V., Pavlov D. A., Grachev D. A., Bobrov A. I., Karabanova I. A., Chugrov I. A., Tetelbaum D. I. Semiconductors, 2014, vol. 48, no. 1, p. 42. DOI: 10.1134/S1063782614010114
13. Ershov A. V., Chugrov I. A., Tetelbaum D. I., Mashin A. I., Pavlov D. A., Nezhdanov A. V., Bobrov A. I., Grachev D. A. Semiconductors, 2013, vol. 47, no. 4, p. 481. DOI: 10.1134/S1063782613040064
14. Ershov A. V., Tetelbaum D. I., Chugrov I. A., Belov A. I., Vasiliev V. K., Ershov A. A., Karabanova I. A., Mashin A. I., Mikhaylov A. N., Nezhdanov A. V. Vestnik Nizhegorodskogo universiteta im. N.I. Lobachevskogo [Bulletin of Lobachevsky State University of Nizhni Novgorod], 2010, no. 1, p. 37. (In Russ.).
15. Ershov A. V., Chugrov I. A., Tetelbaum D. I., Andreev S. S., Belov A. I., Vainer Yu. A., Ershov A. A., Karabanova I. A., Mashin A. I., Mikhailov A. N. Fizika tverdogo tela. Vestnik Nizhegorodskogo universiteta im. N.I. Lobachevskogo [Physics of the Solid State. Bulletin of Lobachevsky State University of Nizhni Novgorod], 2009, no. 4, p. 45. (In Russ.)
16. Turishchev S. Yu., Koyuda D. A., Terekhov V. A., Parinova E. V., Nesterov D. N., Grachev D. A., Karabanova I. A., Ershov A. V., Mashin A. I., Domashevskaya E. P. Condensed Matter And Interphases, 2016, vol. 18, no. 4, p. 558. (In Russ.)
17. Gribelyuk M. A., Callegari A., Gusev E. P., Copel M., Buchanan D. A. J. Appl. Phys., 2002, vol. 92, no. 3, p. 1232. DOI: 10.1063/1.1486036
18. JCPDS-ICDD, 2016, PDF-2 database, 12 Campus Blvd, Newton Square, PA 19073, USA, card N 05-0565.
19. JCPDS-ICDD, 2016, PDF-2 database, 12 Campus Blvd, Newton Square, PA 19073, USA, card N 32-1499.
20. JCPDS-ICDD, 2016, PDF-2 database, 12 Campus Blvd, Newton Square, PA 19073, USA, card N 74-1053.
21. JCPDS-ICDD, 2016, PDF-2 database, 12 Campus Blvd, Newton Square, PA 19073, USA, card N 72-1272.
Published
2018-09-13
How to Cite
Turishchev, S. Y., Koyuda, D. A., Ershov, A. V., Vainer, U. A., Kulikova, T. V., Agapov, B. L., Zinchenko, E. N., Grechkina, M. V., Usoltseva, D. S., & Terekhov, V. A. (2018). STRUCTURE AND COMPOSITION EVOLUTION a-Si/ZrO2 AND a-SiOx/ZrO2 MULTILAYERED NANOPERIODICAL STRUCTURES UNDER HIGH TEMPERATURE ANNEAL. Kondensirovannye Sredy I Mezhfaznye Granitsy = Condensed Matter and Interphases, 20(3), 477-485. https://doi.org/10.17308/kcmf.2018.20/586
Issue
Vol 20 No 3 (2018)
Section
Статьи
Crossref
Scopus
Google Scholar
Europe PMC