Исследования полуполярного нитрида галлия, выращенного на m-сапфире хлоридной газофазной эпитаксией
Аннотация
В нашем исследовании мы проанализировали результат влияния неполярной m-плоскости сапфировой подложки на структурные, морфологические, оптические свойства и Рамановское рассеяние выращенной эпитаксиальной пленки GaN.
Мы обнаружили, что выбранные технологические условия хлорид гидридной эпитаксии позволяют получить образцы структурно качественного полуполярного вюрцитного нитрида галлия с (11¯22) ориентацией на m-сапфире. С использованием комплекса структурно-спектроскопических методов анализа изучены структурные, морфологические и оптических свойства пленок, определен уровень остаточных биаксиальных напряжений. Набор результатов свидетельствует о высоком структурном и оптическом качестве эпитаксиальной пленки нитрида галлия.
Оптимизация использованной технологической методики в будущем может стать многообещающим подходом
роста качественных GaN структур на подложках m-сапфира.
Скачивания
Литература
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