ТЕРМИЧЕСКОЕ ОКСИДИРОВАНИЕ КАК СПОСОБ СОЗДАНИЯ НАНОРАЗМЕРНЫХ ФУНКЦИОНАЛЬНЫХ ПЛЕНОК НА ПОЛУПРОВОДНИКАХ AIIIBV: ХЕМОСТИМУЛИРУЮЩЕЕ ВОЗДЕЙСТВИЕ ОКСИДОВ МЕТАЛЛОВ ОБЗОР
Аннотация
Рассмотрены особенности хемостимулирующего воздействия оксидов металлов на процесс термооксидирования полупроводников AIIIBV. Установлено, что химическая природа оксида-хемостимулятора и способ его введения в систему (из газовой фазы или нанесение на поверхность полупроводника) определяют механизм процесса. Оксиды р-металлов (PbO, Sb2O3, Bi2O3) реализуют транзитный механизм оксидирования независимо от способа их введения в систему. Оксиды d-металлов (MnO2, V2O5, CrO3), вводимые через газовую фазу, выступают в роли хемостимуляторов-транзиторов. Воздействие наноразмерных слоев NiO и Co3O4 развивается по транзитному типу. Для нанесённых на поверхность полупроводника наноразмерных слоёв V2O5 механизм их воздействия на процесс оксидирования АIIIВV в значительной мере определяется методом нанесения (в рамках одного способа) – мягким или жёстким.
Результаты исследований получены на оборудовании Центра коллективного пользования Воронежского государственного университета. URL: http://ckp.vsu.ru
Работа выполнена при поддержке гранта РФФИ № 16-43-360595 р_а
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Литература
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