Влияние обработки в парах серы на скорость термооксидирования InP, состав, морфологию поверхности и свойства плёнок

Аннотация

Предложена методика модифицирования InP в парах серы, методом локального рентгеноспектрального микроанализа подтверждено её наличие на поверхности. Для
плёнок нанометрового диапазона толщины (до 50 нм), выращенных термическим оксидированием InP с предварительно обработанной в парах серы поверхностью, методом Оже-электронной спектроскопии установлено послойное распределение компонентов. По данным атомно-силовой микроскопии модифицирование InP серой приводит к формированию поверхности с зернистой структурой, более упорядоченной по сравнению с эталоном (собственное термооксидирование фосфида индия). Несмотря на то, что в результирующих плёнках сера не обнаружена, они обладают полупроводниковыми свойствами, тогда как для собственных оксидных слоёв на InP характерна омическая проводимость

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