Influence of magnetron sputtering conditions on the structure and surface morphology of InxGa1–xAs thin films on a GaAs (100) substrate

Oleg V. Devitsky; Alexey A. Zakharov; Leonid S. Lunin; Igor A. Sysoev; Alexander S. Pashchenko; Dmitry S. Vakalov; Oleg M. Chapura

doi:10.17308/kcmf.2022.24/9851

Oleg V. Devitsky Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, 41 Chekhov str., Rostov-on-Don 344006, Russian Federation; North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation https://orcid.org/0000-0003-3153-696X
Alexey A. Zakharov North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation https://orcid.org/0000-0003-0379-9383
Leonid S. Lunin Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, 41 Chekhov str., Rostov-on-Don 344006, Russian Federation; North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation https://orcid.org/0000-0002-5534-9694
Igor A. Sysoev North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation https://orcid.org/0000-0001-5415-0782
Alexander S. Pashchenko Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, 41 Chekhov str., Rostov-on-Don 344006, Russian Federation; North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation https://orcid.org/0000-0002-7976-9597
Dmitry S. Vakalov North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation https://orcid.org/0000-0001-6788-3811
Oleg M. Chapura North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation https://orcid.org/0000-0002-6691-0010

DOI: https://doi.org/10.17308/kcmf.2022.24/9851

Keywords: Magnetron sputtering, Thin films, Raman scattering, Surface morphology, A3B5 compounds

Abstract

We present the results of the study of the structure and surface morphology of InxGa1–xAs thin films on a GaAs substrate. Thin films were obtained by magnetron sputtering from a specially formed In0.45Ga0.55As target in an argon atmosphere.
The obtained samples of thin films were studied by Raman scattering, atomic force microscopy, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. It was shown that the grains of the films obtained at a substrate temperature below 600 °C were not faceted and were formed through the coalescence of grains with a size of 30–65 nm. At a substrate temperature of 600 °C, films consisted of submicron grains with a visible faceting.
It was determined that the average grain size increased and the root-mean-square roughness of thin films decreased due to an increase in the substrate temperature. Thin films obtained at a substrate temperature of 600 °C possessed the best structural properties

Downloads

Download data is not yet available.

Author Biographies

Oleg V. Devitsky, Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, 41 Chekhov str., Rostov-on-Don 344006, Russian Federation; North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation

Cand. Sci. (Tech.), Senior
Researcher, Laboratory of Physics and Technology of
Semiconductor Nanoheterostructures for Microwave
Electronics and Photonics, Federal Research Centre
Southern Scientific Centre of the Russian Academy of
Sciences (Rostov-on-Don, Russian Federation); Senior
Researcher, Scientific and Educational Centre for
Photovoltaics and Nanotechnology, North Caucasian
Federal University (Stavropol, Russian Federation).

Alexey A. Zakharov, North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation

Junior Researcher, Scientific
and Educational Centre for Photovoltaics and
Nanotechnology, North Caucasian Federal University
(Stavropol, Russian Federation).

Leonid S. Lunin, Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, 41 Chekhov str., Rostov-on-Don 344006, Russian Federation; North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation

Dr. Sci. (Phys.–Math.), Chief
Researcher, Laboratory of Physics and Technology of
Semiconductor Nanoheterostructures for Microwave
Electronics and Photonics, Federal Research Centre
Southern Scientific Centre of the Russian Academy of
Sciences (Rostov-on-Don, Russian Federation; Chief
Researcher, Scientific and Educational Center for
Photovoltaics and Nanotechnology, North Caucasian
Federal University (Stavropol, Russian Federation).

Igor A. Sysoev, North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation

Dr. Sci. (Tech.), Director, Scientific
and Educational Centre for Photovoltaics and
Nanotechnology, North Caucasian Federal University
(Stavropol, Russian Federation).

Alexander S. Pashchenko, Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, 41 Chekhov str., Rostov-on-Don 344006, Russian Federation; North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation

Cand. Sci. (Phys.–Math.),
Senior Researcher, Head of the Laboratory of Physics
and Technology of Semiconductor
Nanoheterostructures for Microwave Electronics and
Photonics, Federal Research Center Southern Scientific
Center of the Russian Academy of Sciences (Rostovon-
Don, Russian Federation; Senior Researcher,
Scientific and Educational Center for Photovoltaics
and Nanotechnology, North Caucasian Federal
University (Stavropol, Russian Federation).

Dmitry S. Vakalov, North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation

Cand. Sci. (Phys.–Math.), Head
of the Research Laboratory of Physicochemical
Methods of Analysis, Scientific-laboratory Complex of
Clean Rooms, Faculty of Physics and Technology,
North Caucasian Federal University (Stavropol, Russian
Federation)

Oleg M. Chapura, North Caucasian Federal University, 1 Pushkina str., Stavropol 355017, Russian Federation

Engineer of the Department of
Physical Electronics, Physics and Technology Faculty,
North Caucasian Federal University, (Stavropol, Russian
Federation).

References

Wang W., Ma B., Chao Gao H., Long Yu H., Hui Li Z. Low surface roughness GaAs/Si thin-film deposition using three-step growth method in MBE. Materials Science Forum. 2020;1014(43): 43–51. https://doi.org/10.4028/www.scientific.net/MSF.1014.43

Devitsky O. V., Nikulin D. A., Sysoev I. A. Pulsed laser deposition of aluminum nitride thin films onto sapphire substrates. Scientific and Technical Journal of Information Technologies, Mechanics and Optics. 2020;20(2): 177–184. https://doi.org/10.17586/2226-1494-2020-20-2–177-184

Lunin L. S., Devitskii O. V., Sysoev I. A., Pashchenko A. S., Kas’yanov I. V., Nikulin D. A., Irkha V. A. Ion-beam seposition of thin AlN films on Al2O3 substrate. Technical Physics Letters. 2019;45(24): 1237. https://doi.org/10.1134/S106378501912023X

Zhu H., Chen Y., Zhao Y., Li X., Teng Y., Hao X., Liu J., Zhu H., Wu Q., Huang Y., Huang Y. Growth and characterization of InGaAs/InAsSb superlattices by metal-organic chemical vapor deposition for midwavelength infrared photodetectors. Superlattices and Microstructures. 2020;146: 106655. https://doi.org/10.1016/j.spmi.2020.106655

Pashchenko A. S., Devitsky O. V., Lunin L. S., Kasyanov I. V., Nikulin D. A., Pashchenko O. S. Structure and forphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition. Thin Solid Films. 2022;743 139064. https://doi.org/10.1016/j.tsf.2021.139064

Bernal-Correaa R., Gallardo-Hernández S., Cardona-Bedoyac J., Pulzara-Mora A. Structural and optical characterization of GaAs and InGaAs thin films deposited by RF magnetron sputtering. Optik. 2017;145: 608–616. https://doi.org/10.1016/j.ijleo.2017.08.042

Zelaya-Angel O., Jiménez-Sandoval S., Alvarez-Fregoso O. , Mendoza-Alvarez J.G. , Gómez-Herrera1 M.L., Cardona-Bedoya J., Huerta-Ruelas J. Rhombohedral symmetry in GaAs1–xNx nanostructures. Semiconductor Science and Technology. 2021;36(4): 045026. https://doi.org/10.1088/1361-6641/abe319

Mantarcı A. Comparison of optical, electrical, and surface characteristics of InGaN thin flms at non‑fow and small nitrogen fow cases. Optical and Quantum Electronics. 2021;53:544. https://doi.org/10.1007/s11082-021-03203-4

Nishimoto N., Fujihara J. Characterization of GaSb thin films with excess Ga grown by RF magnetron sputtering. International Journal of Modern Physics B. 2020;34(1020): 2050097. https://doi.org/10.1142/S0217979220500976

Othman N.A., Nayan N., Mustafa M.K., Azman Z., Hasnan M.M.I.M., Bakri A.S., Jaffar S.N., Abu Bakar A.S., Mamat M.H., Mohd Yusop M.Z., Ahmad M.Y. Structural and Morphological Properties of AlGaN Thin Films Prepared by Co-sputtering Technique. In: Proceedings – 2021 IEEE Regional Symposium on Micro and Nanoelectronics. 13th IEEE Regional Symposium on Micro and Nanoelectronics, 2 4 August 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 20–23. https://doi.org/10.1109/RSM52397.2021.9511605

Mulcue L.F., de la Cruz W., Saldarriaga W. Efect of flm thickness on morphological, structural and electrical properties of InAlN thin layers grown on glass at room temperature. Applied Physics A. 2021;127: 479. https://doi.org/10.1007/s00339-021-04618-2

Ferhati H., Djeffal F., Bendjerad A., Benhaya A., Saidi A. Perovskite/InGaAs tandem cell exceeding 29% efficiency via optimizing spectral splitter based on RF sputtered ITO/Ag/ITO ultra-thin structure. Physica E: Low-dimensional Systems and Nanostructures. 2021;128: 114618. https://doi.org/10.1016/j.physe.2020.114618

Kao Y. C., Chou H. M., Hsu S. C., Lin A., Lin C. C., Shih Z. H., Chang C. L., Hong H. F., Horng R. H. Performance comparison of III–V//Si and III–V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding. Scientific Reports. 2019;9 4308. https://doi.org/10.1038/s41598-019-40727-y

Bernal-Correa R., Torres-Jaramillo S., Pulzara- Mora C., Montes-Monsalve J., Gallardo-Hernández S., López –López M., Cardona-Bedoya J., Pulzara-Mora A. InxGa1–xAs obtained from independent target via cosputtering

deposition. Journal of Physics: Conference Series. 2017;850: 012013. https://doi.org/10.1088/1742-6596/850/1/012013

Fedorov P. P., Mayakova M. N., Gaynutdinov R. V., Tabachkova N. Yu., Komandin G. A., Baranchikov A. E., Chernova E. V., Kuznetsov S. V., Ivanov V. K., Osiko V. V. Investigation of the deposition of calcium fluoride nanoparticles on the chips of CaF2 single crystals. Condensed Matter and Interphases. 2021;23(4): 607–613. https://doi.org/10.17308/kcmf.2021.23/3681

Colfen H. Nonclassical nucleation and crystallization. Crystals. 2020;10(2): 61. https://doi.org/10.3390/cryst10020061

Loudon R., The Raman effect in crystals. Advances in Physics. 1964;52(13): 423-482. https://doi.org/10.1080/00018736400101051

Greene L. H., Dorsten J. F., Roshchin I. V., Abeyta A. C., Tanzer T. A., Feldmann W. L., Bohn P. W. Optical detection of the superconducting proximity effect: Raman scattering on Nb/InAs. Czechoslovak Journal of Physics Supplement. 1996;46(2): 741. https://doi.org/10.1007/BF02583678

Pulzara-Mora A., Montes-Monsalve J., Bernal-Correa R., Morales-Acevedo A., Gallardo-Hernández S., López-López M. Structural, optical and morphological properties of InxGa1–xAs layers obtained by RF magnetron sputtering. Superficies y Vacío. 2016;29(2) 32–37. Available at: https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/47/31

Kang S., Jeong T. S. Indium composition dependence of Raman spectroscopy and photocurrent of InxGa1–xAs strained layers grown by using MOCVD. Journal of the Korean Physical Society. 2020;76(3): 231. https://doi.org/10.3938/jkps.76.231

Groenen J., Carles R., Landa G. Optical-phonon behavior in Ga1–xInxAs: the role of microscopic strains and ionic plasmon coupling. Physical Review B. 1998;58(16): 10452–10462. https://doi.org/10.1103/physrevb.58.10452