Phase transformations during the annealing of Ga2O3 films
Abstract
A growth technique has been developed to obtain the three main crystalline phases of Ga2O3, namely: a-phases, e-phases, and b-phases using hybrid vapour phase epitaxy (HVPE). The substrate temperatures and precursor fluxes were determined at which only the a-phase, only the e-phase, or only the b-phase were deposited. It was found that the annealing of the metastable a- and e-phases led to completely different results. The e-phase quickly transforms into the stable b-phase as a result of annealing, while the a-phase, upon annealing, transforms into an intermediate amorphous phase, after which it peels off and is destroyed. The obtained result is explained by the fact that the reconstructive phase transition from the a-phase into the b-phase is accompanied by too large an increase in density (~10%), leading to enormous elastic stresses
and, consequently, an increase in the height of the phase transition barrier
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References
Tsao J. Y., Chowdhury S., Hollis M. A., … Simmons J. A. Ultrawide-bandgap semiconductors: research opportunities and challenges. Advanced Electronic Materials. 2018;4(1): 1600501. https://doi.org/10.1002/aelm.201600501
Jamwal N. S., Kiani A. Gallium oxide nanostructures: A review of synthesis, properties and applications. Nanomaterials (Basel). 2022;12: 2061. https://doi.org/10.3390/nano12122061
Pearton S. J., Yang J., Cary P. H., Ren F., Kim, J., Tadjer M. J., Mastro M. A. A review of Ga2O3 materials, processing, and devices. Applied Physics Reviews 2018;5(1): 011301, https://doi.org/10.1063/1.5006941
Stepanov S. I.; Nikolaev V.; Bougrov V. E.; Romanov A. Gallium oxide: properties and applications – A review. Revviews on Advanced Materials Science.2016;44: 63–86. Режим доступа: https://www.elibrary.ru/item.asp?id=26987785
Nomura K., Goto K., Togashi R., … Koukitu A. Thermodynamic study of b-Ga2O3 growth by halide vapor phase epitaxy. Journal of Crystal Growth. 2014;405: 19–22. https://doi.org/10.1016/j.jcrysgro.2014.06.051
Osipov A. V., Grashchenko A. S., Kukushkin S. A., Nikolaev V. I., Osipova E. V., Pechnikov A. I., Soshnikov I. P. Structural and elastoplastic properties of b-Ga2O3 films grown on hybrid SiC/Si substrates. Continuum Mechanics and Thermodynamics. 2018;30(5): 1059-68. https://doi.org/10.1007/s00161-018-0662-6
Osipov A. V., Sharofidinov, S. S., Osipova E. V., Kandakov A. V., Ivanov A. Y., Kukushkin S. A. Growth and optical properties of Ga2O3 layers of different crystalline modifications. Coatings. 2022;12(12): 1802. https://doi.org/10.3390/coatings12121802
Kukushkin S. A., Osipov A. V. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films. Journal of Physics D: Applied Physics. 2014; 47(31): 313001 https://doi.org/10.1088/0022-3727/47/31/313001
Fiedler A., Schewski R., Galazka Z., Irmscher K. Static dielectric constant of b-Ga2O3 perpendicular to the principal planes (100), (010), and (001). ECS Journal of Solid State Science and Technology. 2019;8(7): Q3083. https://doi.org/10.1149/2.0201907jss
Furthmüller J., Bechstedt F. Quasiparticle bands and spectra of Ga2O3 polymorphs. Physical Review B. 2016;93(11): 115204. https://doi.org/10.1103/PhysRevB.93.115204
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