Phase transformations during the annealing of Ga2O3 films

Keywords: Reconstructive phase transitions, Gallium oxide, Polymorphs, X-ray diffraction, Spectroscopic ellipsometry, Raman spectrum

Abstract

       A growth technique has been developed to obtain the three main crystalline phases of Ga2O3, namely: a-phases, e-phases, and b-phases using hybrid vapour phase epitaxy (HVPE). The substrate temperatures and precursor fluxes were determined at which only the a-phase, only the e-phase, or only the b-phase were deposited. It was found that the annealing of the metastable a- and e-phases led to completely different results. The e-phase quickly transforms into the stable b-phase as a result of annealing, while the a-phase, upon annealing, transforms into an intermediate amorphous phase, after which it peels off and is destroyed. The obtained result is explained by the fact that the reconstructive phase transition from the a-phase into the b-phase is accompanied by too large an increase in density (~10%), leading to enormous elastic stresses
and, consequently, an increase in the height of the phase transition barrier

Downloads

Download data is not yet available.

Author Biographies

Andrei V. Osipov, Institute for Problems in Mechanical Engineering of the Russian Academy of Science, 61 Boljshoy prospekt V.O., St. Petersburg 199178, Russian Federation

Dr. Sci. (Phys.–Math.), Head of
the Laboratory of Structural and Phase Transformations
of the Institute for Problems of Mechanical Engineering
of the Russian Academy of Sciences (St. Petersburg,
Russian Federation)

Shukrillo Sh. Sharofidinov, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation

Cand. Sci. (Phys.–Math.),
Senior Researcher of the Laboratory of Semiconductor
Devices Physics, Ioffe Institute of the Russian Academy
of Sciences (St. Petersburg, Russian Federation)

Arina V. Kremleva, ITMO University, 49 Kronverksky pr., bldg. A, St. Petersburg 197101, Russian Federation

Cand. Sci. (Phys.–Math.),
Associate Professor, National Research University
ITMO (St. Petersburg, Russian Federation)

Andrey M. Smirnov, ITMO University, 49 Kronverksky pr., bldg. A, St. Petersburg 197101, Russian Federation

Cand. Sci. (Phys.–Math.),
Associate Professor, National Research University,
ITMO (Saint-Petersburg, Russian Federation)

Elena V. Osipova, Institute for Problems in Mechanical Engineering of the Russian Academy of Science, 61 Boljshoy prospekt V.O., St. Petersburg 199178, Russian Federation

Cand. Sci. (Phys.–Math.), Senior
Researcher of the Laboratory of Wave Process
Modeling, Institute for Problems of Mechanical
Engineering of the Russian Academy of Sciences (St.
Petersburg, Russian Federation)

Andrei V. Kandakov, Institute for Problems in Mechanical Engineering of the Russian Academy of Science, 61 Boljshoy prospekt V.O., St. Petersburg 199178, Russian Federation

Research Associate, Laboratory
of Structural and Phase Transformations, Institute for
Problems of Mechanical Engineering, Russian
Academy of Sciences (St. Petersburg, Russian
Federation)

Sergey A. Kukushkin, Institute for Problems in Mechanical Engineering of the Russian Academy of Science, 61 Boljshoy prospekt V.O., St. Petersburg 199178, Russian Federation

Dr. Sci. (Phys.–Math.),
Professor, Chief Researcher, Head of the Laboratory of
Structural and Phase Transformations in Condensed
Media, Institute for Problems in Mechanical
Engineering of the Russian Academy of Sciences (St.
Petersburg, Russian Federation)

References

Tsao J. Y., Chowdhury S., Hollis M. A., … Simmons J. A. Ultrawide-bandgap semiconductors: research opportunities and challenges. Advanced Electronic Materials. 2018;4(1): 1600501. https://doi.org/10.1002/aelm.201600501

Jamwal N. S., Kiani A. Gallium oxide nanostructures: A review of synthesis, properties and applications. Nanomaterials (Basel). 2022;12: 2061. https://doi.org/10.3390/nano12122061

Pearton S. J., Yang J., Cary P. H., Ren F., Kim, J., Tadjer M. J., Mastro M. A. A review of Ga2O3 materials, processing, and devices. Applied Physics Reviews 2018;5(1): 011301, https://doi.org/10.1063/1.5006941

Stepanov S. I.; Nikolaev V.; Bougrov V. E.; Romanov A. Gallium oxide: properties and applications – A review. Revviews on Advanced Materials Science.2016;44: 63–86. Режим доступа: https://www.elibrary.ru/item.asp?id=26987785

Nomura K., Goto K., Togashi R., … Koukitu A. Thermodynamic study of b-Ga2O3 growth by halide vapor phase epitaxy. Journal of Crystal Growth. 2014;405: 19–22. https://doi.org/10.1016/j.jcrysgro.2014.06.051

Osipov A. V., Grashchenko A. S., Kukushkin S. A., Nikolaev V. I., Osipova E. V., Pechnikov A. I., Soshnikov I. P. Structural and elastoplastic properties of b-Ga2O3 films grown on hybrid SiC/Si substrates. Continuum Mechanics and Thermodynamics. 2018;30(5): 1059-68. https://doi.org/10.1007/s00161-018-0662-6

Osipov A. V., Sharofidinov, S. S., Osipova E. V., Kandakov A. V., Ivanov A. Y., Kukushkin S. A. Growth and optical properties of Ga2O3 layers of different crystalline modifications. Coatings. 2022;12(12): 1802. https://doi.org/10.3390/coatings12121802

Kukushkin S. A., Osipov A. V. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films. Journal of Physics D: Applied Physics. 2014; 47(31): 313001 https://doi.org/10.1088/0022-3727/47/31/313001

Fiedler A., Schewski R., Galazka Z., Irmscher K. Static dielectric constant of b-Ga2O3 perpendicular to the principal planes (100), (010), and (001). ECS Journal of Solid State Science and Technology. 2019;8(7): Q3083. https://doi.org/10.1149/2.0201907jss

Furthmüller J., Bechstedt F. Quasiparticle bands and spectra of Ga2O3 polymorphs. Physical Review B. 2016;93(11): 115204. https://doi.org/10.1103/PhysRevB.93.115204

Published
2023-10-12
How to Cite
Osipov, A. V., Sharofidinov, S. S., Kremleva, A. V., Smirnov, A. M., Osipova, E. V., Kandakov, A. V., & Kukushkin, S. A. (2023). Phase transformations during the annealing of Ga2O3 films. Condensed Matter and Interphases, 25(4), 557-563. https://doi.org/10.17308/kcmf.2023.25/11479
Section
Original articles

Most read articles by the same author(s)