Confirmation of spontaneous doping of GaN nanowires grown on vicinal SiC/Si substrate by electron beam induced current mapping

Rodion R. Reznik; Vladislav O. Gridchin; Konstantin P. Kotlyar; Vladimir V. Neploh; Andrei V. Osipov; Sergey A. Kukushkin; Omar Saket; Maria Tchernycheva; George E. Cirlin

doi:10.17308/kcmf.2023.25/11474

Rodion R. Reznik St. Petersburg State University, 7-9 Universitetskaya Embankment, St. Petersburg 199034, Russian Federation; Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation; Institute for Analytical Instrumentation of the Russian Academy of Sciences, 26 Rizhsky st., St. Petersburg 190103, Russian Federation https://orcid.org/0000-0003-1420-7515
Vladislav O. Gridchin St. Petersburg State University, 7-9 Universitetskaya Embankment, St. Petersburg 199034, Russian Federation; Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation; Institute for Analytical Instrumentation of the Russian Academy of Sciences, 26 Rizhsky st., St. Petersburg 190103, Russian Federation https://orcid.org/0000-0002-6522-3673
Konstantin P. Kotlyar St. Petersburg State University, 7-9 Universitetskaya Embankment, St. Petersburg 199034, Russian Federation; Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation; Institute for Analytical Instrumentation of the Russian Academy of Sciences, 26 Rizhsky st., St. Petersburg 190103, Russian Federation https://orcid.org/0000-0002-0305-0156
Vladimir V. Neploh Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation https://orcid.org/0000-0001-8158-0681
Andrei V. Osipov Institute for Problems in Mechanical Engineering of the Russian Academy of Science, 61 Boljshoy prospekt V.O., St. Petersburg 199178, Russian Federation https://orcid.org/0000-0002-2911-7806
Sergey A. Kukushkin Institute for Problems in Mechanical Engineering of the Russian Academy of Science, 61 Boljshoy prospekt V.O., St. Petersburg 199178, Russian Federation https://orcid.org/0000-0002-2973-8645
Omar Saket Centre de Nanosciences et de Nanotechnologies (C2N), University Paris-Saclay, 10 Boulevard Thomas, Gobert, Palaiseau 91120, France https://orcid.org/0000-0002-9002-5871
Maria Tchernycheva Centre de Nanosciences et de Nanotechnologies (C2N), University Paris-Saclay, 10 Boulevard Thomas, Gobert, Palaiseau 91120, France https://orcid.org/0000-0003-4144-0793
George E. Cirlin St. Petersburg State University, 7-9 Universitetskaya Embankment, St. Petersburg 199034, Russian Federation; Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation; Institute for Analytical Instrumentation of the Russian Academy of Sciences, 26 Rizhsky st., St. Petersburg 190103, Russian Federation https://orcid.org/0000-0003-0476-3630

DOI: https://doi.org/10.17308/kcmf.2023.25/11474

Keywords: Semiconductors, GaN, Nanowires, Molecular beam epitaxy, Spontaneous doping, Silicon, Silicon carbide, Electron beam induced current method

Abstract

This study is devoted to the confirmation of spontaneous doping of GaN nanowires grown on vicinal SiC/Si hybrid substrates by electron beam induced current mapping.
GaN nanowires (NWs) were grown on singular and vicinal SiC/Si substrates by molecular beam epitaxy with nitrogen plasma activation. The morphological properties of the NWs were studied by scanning electron microscopy. The electrophysical properties of the obtained nanostructures were studied by electron beam induced current mapping.
By electron beam induced current mapping, we confirmed the spontaneous doping of the GaN NWs grown on vicinal SiC/Si wafers. It was also shown that the GaN NWs grown on singular SiC/Si substrates did not exhibit an induced current signal, indicating that they were not doped

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Author Biographies

Rodion R. Reznik, St. Petersburg State University, 7-9 Universitetskaya Embankment, St. Petersburg 199034, Russian Federation; Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation; Institute for Analytical Instrumentation of the Russian Academy of Sciences, 26 Rizhsky st., St. Petersburg 190103, Russian Federation

Cand. Sci. (Phys.–Math.), Head
of the Laboratory, St. Petersburg University; Alferov
University; Institute for Analytical Instrumentation
of the Russian Academy of Sciences (St. Petersburg,
Russian Federation)

Vladislav O. Gridchin, St. Petersburg State University, 7-9 Universitetskaya Embankment, St. Petersburg 199034, Russian Federation; Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation; Institute for Analytical Instrumentation of the Russian Academy of Sciences, 26 Rizhsky st., St. Petersburg 190103, Russian Federation

Cand. Sci. (Phys.–Math.),
Junior Researcher, St. Petersburg University; Alferov
University; Institute for Analytical Instrumentation
of the Russian Academy of Sciences (St. Petersburg,
Russian Federation)

Konstantin P. Kotlyar, St. Petersburg State University, 7-9 Universitetskaya Embankment, St. Petersburg 199034, Russian Federation; Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation; Institute for Analytical Instrumentation of the Russian Academy of Sciences, 26 Rizhsky st., St. Petersburg 190103, Russian Federation

Cand. Sci. (Phys.–Math.),
Junior Researcher, St. Petersburg University; Alferov
University; Institute for Analytical Instrumentation
of the Russian Academy of Sciences (St. Petersburg,
Russian Federation)

Vladimir V. Neploh, Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation

Cand. Sci. (Phys.–Math.),
Senior Researcher, Alferov University (St. Petersburg,
Russian Federation)

Andrei V. Osipov, Institute for Problems in Mechanical Engineering of the Russian Academy of Science, 61 Boljshoy prospekt V.O., St. Petersburg 199178, Russian Federation

Dr. Sci. (Phys.–Math.), Main
Researcher, Institute for Problems in Mechanical
Engineering of the Russian Academy of Sciences (St.
Petersburg, Russian Federation)

Sergey A. Kukushkin, Institute for Problems in Mechanical Engineering of the Russian Academy of Science, 61 Boljshoy prospekt V.O., St. Petersburg 199178, Russian Federation

Dr. Sci. (Phys.–Math.), Head
of Laboratory, Institute for Problems in Mechanical
Engineering of the Russian Academy of Sciences (St.
Petersburg, Russian Federation)

Omar Saket, Centre de Nanosciences et de Nanotechnologies (C2N), University Paris-Saclay, 10 Boulevard Thomas, Gobert, Palaiseau 91120, France

PhD, Researcher, Centre de
Nanosciences et de Nanotechnologies (C2N), de
l’université Paris-Saclay (Palaiseau, France)

Maria Tchernycheva, Centre de Nanosciences et de Nanotechnologies (C2N), University Paris-Saclay, 10 Boulevard Thomas, Gobert, Palaiseau 91120, France

Dr. Sci. (Phys.–Math.), Head
of Laboratory, Centre de Nanosciences et de
Nanotechnologies (C2N), de l’université Paris-Saclay
(Palaiseau, France)

George E. Cirlin, St. Petersburg State University, 7-9 Universitetskaya Embankment, St. Petersburg 199034, Russian Federation; Alferov University, 8/3 Khlopina st., St. Petersburg 194021, Russian Federation; Institute for Analytical Instrumentation of the Russian Academy of Sciences, 26 Rizhsky st., St. Petersburg 190103, Russian Federation

Dr. Sci. (Phys.–Math.), Head of
Laboratory, St Petersburg University; Alferov
University; Institute for Analytical Instrumentation
of the Russian Academy of Sciences (St. Petersburg,
Russian Federation)

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