Technological features of the method of liquid-phase epitaxy when growing InP/GaInAsP heterostructures

Mikhail G. Vasil’ev; Anton M. Vasil’ev; Alexander D. Izotov; Yuriy O. Kostin; Alexey A. Shelyakin

doi:10.17308/kcmf.2021.23/3528

Mikhail G. Vasil’ev Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospect, Moscow 119991, Russian Federation https://orcid.org/0000-0002-4279-1707
Anton M. Vasil’ev Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospect, Moscow 119991, Russian Federation https://orcid.org/0000-0002-9901-5856
Alexander D. Izotov Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospect, Moscow 119991, Russian Federation https://orcid.org/0000-0002-4639-3415
Yuriy O. Kostin Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospect, Moscow 119991, Russian Federation https://orcid.org/0000-0001-8172-3988
Alexey A. Shelyakin Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospect, Moscow 119991, Russian Federation

DOI: https://doi.org/10.17308/kcmf.2021.23/3528

Keywords: Heterostructures, Growth defects, Laser diodes, Indium phosphide, Buried heterostructures, Channel in the substrate

Abstract

Semiconductor devices of quantum electronics based on InP/GaInAsP heterostructures require the creation of non-defective chips for emitting devices and photodetectors. The production of such chips is impossible without a thorough technological study of the growth processes of epitaxial structures. One of the important problems in relation to the growth of such structures is the growth defects associated with the process of dissociation of indium phosphide on the surface during their growth. The aim of the work was the investigation of the process and mechanism of destruction (dissociation) of the surface of indium phosphide substrates in the range of growth temperatures of structures, as well as the study of methods and
techniques that allow minimize the process of dissociation of surface of indium phosphide.
The work provides studies of the growth processes of InP/GaInAsP heterostructures, from the liquid phase, taking into account the degradation processes of the growth surface and the mechanisms for the formation of dissociation defects.
The schemes of the dissociation process of the InP on the surface of the substrate and the formation of the defective surface of the substrate were analysed. At the same time, technological methods allowing to minimize the dissociation of the surface compound during the process of liquid-phase epitaxy were shown. The original design of a graphite cassette allowing to minimize the dissociation of the indium phosphide substrate in the process of liquid-phase epitaxy was proposed

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Author Biographies

Mikhail G. Vasil’ev, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospect, Moscow 119991, Russian Federation

DSc in Technical Sciences,
Professor, Head of the Laboratory of Semiconductor
and Dielectric Materials, Kurnakov Institute of General
and Inorganic Chemistry of the Russian Academy of
Sciences, Moscow, Russian Federation, e-mail:
mgvas@igic.ras.ru

Anton M. Vasil’ev, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospect, Moscow 119991, Russian Federation

Researcher Fellow, Kurnakov
Institute of General and Inorganic Chemistry of the
Russian Academy of Sciences, Moscow, Russian
Federation e-mail: toto71@bk.ru

Alexander D. Izotov, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospect, Moscow 119991, Russian Federation

D S c i n C h e m i s t r y,
Corresponding Member of the Russian Academy of
Sciences, Chief Researcher of the Laboratory of
Semiconductor and Dielectric Materials, Kurnakov
Institute of General and Inorganic Chemistry of the
Russian Academy of Sciences, Moscow, Russian
Federation, e-mail: izotov@igic.ras.ru

Yuriy O. Kostin, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospect, Moscow 119991, Russian Federation

PhD in Technical Science, Senior
Researcher, Kurnakov Institute of General and
Inorganic Chemistry of the Russian Academy of
Sciences, Moscow, Russian Federation, e-mail:
temptelam@yandex.ru

Alexey A. Shelyakin, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospect, Moscow 119991, Russian Federation

PhD in Technical Science,
Senior Researcher of the Laboratory of Semiconductor
and Dielectric Materials, Kurnakov Institute of General
and Inorganic Chemistry of the Russian Academy of
Sciences, Moscow, Russian Federation, e-mail:
aleksscheliakin@gmail.com

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