Structure and chemical composition of grain boundaries in the magnetic semiconductor GaSb<Mn>

Vladimir P. Sanygin; Olga N. Pashkova; Alexander D. Izotov

doi:10.17308/kcmf.2021.23/3533

Vladimir P. Sanygin Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation https://orcid.org/0000-0002-1261-6895
Olga N. Pashkova Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation https://orcid.org/0000-0002-2102-1025
Alexander D. Izotov Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation https://orcid.org/0000-0002-4639-3415

DOI: https://doi.org/10.17308/kcmf.2021.23/3533

Keywords: Magnetic semiconductors, Gallium antimonide, Crystal lattice defects, Magnetic clusters

Abstract

The structure and chemical composition of grain boundaries in GaSb<Mn> magnetic semiconductors have been investigated. We determined that quenching of the GaSb melt with 2% Mn results in the formation of a textured polycrystal (111). The grain boundaries of the texture are formed by split 60 degree dislocations with <110> dislocation lines. Microinclusions based on the ferromagnetic compound MnSb are located on the stacking faults of split dislocations. The chemical compositions of microinclusions differ, but their average composition is close to Mn1.1Sb. The synthesized GaSb<Mn> is a soft ferromagnet with a coercive force of 10 Oe and a magnetic state approaching superparamagnetic

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Author Biographies

Vladimir P. Sanygin, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation

PhD in Chemistry, senior
research fellow, Laboratory of Semiconductor and
Dielectric Materials, Kurnakov Institute of General and
Inorganic Chemistry of the Russian Academy of
Sciences, Moscow, Russian Federation; e-mail:
sanygin@igic.ras.ru

Olga N. Pashkova, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation

PhD in Chemistry, senior
research fellow, Laboratory of Semiconductor and
Dielectric Materials, Kurnakov Institute of General and
Inorganic Chemistry of the Russian Academy of
Sciences, Moscow, Russian Federation; e-mail: olgpashkova@yandex.ru

Alexander D. Izotov, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation

DSc in Chemistry, Associate
Member of the Russian Academy of Sciences, Chief
Researcher, Laboratory of Semiconductor and
Dielectric Materials, Kurnakov Institute of General and
Inorganic Chemistry of the Russian Academy of
Sciences, Moscow, Russian Federation; e-mail:
izotov@igic.ras.ru

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