Synthesis of bulk crystals and thin films of the ferromagnetic MnSb

Muhammadyusuf Jaloliddinzoda; Sergey F. Marenkin; Alexey I. Ril’; Mikhail G. Vasil’ev; Alexander D. Izotov; Denis E. Korkin

doi:10.17308/kcmf.2021.23/3530

Muhammadyusuf Jaloliddinzoda 1National University of Science and Technology MISIS, 4 Leninskiy prospekt, Moscow 119049, Russian Federation https://orcid.org/0000-0002-5187-5136
Sergey F. Marenkin National University of Science and Technology MISIS, 4 Leninskiy prospekt, Moscow 119049, Russian Federation; Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation https://orcid.org/0000-0003-2577-6481
Alexey I. Ril’ Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation https://orcid.org/0000-0002-7745-2529
Mikhail G. Vasil’ev Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation https://orcid.org/0000-0002-4279-1707
Alexander D. Izotov Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation https://orcid.org/0000-0002-4639-3415
Denis E. Korkin Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation https://orcid.org/0000-0001-6838-3974

DOI: https://doi.org/10.17308/kcmf.2021.23/3530

Keywords: High-temperature soft ferromagnets, XRD, DTA, Thin films, Microstructure analysis, Manganese antimonide (MnSb)

Abstract

High-temperature ferromagnets are widely used on a practical level. Based on them, magnetic memory for computers and various types of magnetic field sensors are created. Therefore, bulk ingots and thin-film samples of ferromagnet manganese antimonide (MnSb) with a high Curie point are of great interest, both from the practical and fundamental sides. Manganese antimonide films are obtained in hybrid structures using molecular-beam epitaxy. The thickness of the films does not exceed tens of nanometers. Despite their high sensitivity to magnetic fields, their small thickness prevents them from being used as magnetic field sensors. The aim of this work was to synthesise thick bulk ingots of manganese antimonide crystals
and films with a thickness of ~ 400 nm on sitall and silicon substrates. MnSb crystals were synthesised using the vacuum-ampoule method and identified using XRD, DTA, and microstructural analysis. The results of studies of bulk samples indicated the presence of an insignificant amount of antimony in addition
to the MnSb phase. According to the DTA thermogram of the MnSb alloy, a small endothermic effect was observed at 572 °C, which corresponds to the melting of the eutectic on the part of antimony in the Mn-Sb system. Such composition, according to previous studies, guaranteed the production of manganese antimonide with the maximum Curie temperature. A study of the magnetic properties showed that the synthesised MnSb crystals were a soft ferromagnet with the Curie point ~ 587 K. Thin MnSb films were obtained by an original method using separate sequential deposition in a high vacuum of the Mn
and Sb metals with their subsequent annealing. To optimise the process of obtaining films with stoichiometric composition, the dependences of the thickness of metal films on the parameters of the deposition process were calculated. The temperature range of annealing at which the metals interact with the formation of ferromagnetic MnSb films was established, the films were identified, and their electrical and magnetic properties were measured

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Author Biographies

Muhammadyusuf Jaloliddinzoda, 1National University of Science and Technology MISIS, 4 Leninskiy prospekt, Moscow 119049, Russian Federation

PhD student,
Department of Electronic materials technology,
National University of Science and Technology
“MISIS”, Moscow, Russian Federation; e-mail:
muhammad.9095@mail.ru

Sergey F. Marenkin, National University of Science and Technology MISIS, 4 Leninskiy prospekt, Moscow 119049, Russian Federation; Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation

DSc in Chemistry, Professor,
Chief Researcher of the Laboratory of Semiconductor
and Dielectric Materials, Kurnakov Institute of General
and Inorganic Chemistry of the Russian Academy of
Sciences, Moscow, Russian Federation;
email: marenkin@rambler.ru

Alexey I. Ril’, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation

Junior Researcher at the Laboratory
of Semiconductor and Dielectric Materials, Kurnakov
Institute of General and Inorganic Chemistry of the
Russian Academy of Sciences, Moscow, Russian
Federation; e-mail: ril_alexey@mail.ru

Mikhail G. Vasil’ev, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation

DSc in Technical Sciences,
Professor, Head of the Laboratory of Semiconductor
and Dielectric Materials, Kurnakov Institute of General
and Inorganic Chemistry of the Russian Academy of
Sciences, Moscow, Russian Federation; e-mail:
mgvas@igic.ras.ru

Alexander D. Izotov, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation

DS cin Chemistry,
Corresponding Member of Russian Academy of
Sciences, Chief Researcher at the Laboratory of
Semiconductor and Dielectric Materials, Kurnakov
Institute of General and Inorganic Chemistry of the
Russian Academy of Sciences, Moscow, Russian
Federation; e-mail: izotov@igic.ras.ru.

Denis E. Korkin, Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prospekt, Moscow 119991, Russian Federation

Technologist at the Laboratory of
Semiconductor and Dielectric Materials, Kurnakov
Institute of General and Inorganic Chemistry of the
Russian Academy of Sciences, Moscow, Russian
Federation; e-mail: disa5566@yandex.ru

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