INTERFACIAL REACTION OF CeO2 FILMS WITH TEXTURED Ni-ALLOY SUBSTRATES
Аннотация
CeO2 films were deposited on biaxially textured tapes of Ni-W and Ni-Cr-W alloys using MOCVD at 550 °C and subsequently treated in post-deposition annealing at 1000 °C and reducing atmosphere. Upon annealing of the films on the Ni-W alloy substrate, cube texture in the CeO2 films
was formed, and the oxide had an epitaxial interface with the Ni-W alloy substrate as shown by high resolution transmission electron microscopy. Similar annealing of the CeO2 films on the Ni-Cr-W alloy substrate resulted in interaction of the oxide layer with the metal substrate leading to the formation of epitaxial NiO interlayer at the CeO2/Ni-Cr-W interface.
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