Fabrication of a-Ga2O3:Sn/a-Cr2O3/a-Al2O3 heterostructure by mist CVD and HVPE

Keywords: Gallium Oxide, Sapphire substrate, Heteroepitaxy, CVD, Mist-CVD, HVPE

Abstract

     Corundum-structured chromium oxide (a-Cr2O3), exhibiting p-type conductivity, is a highly attractive candidate for forming high-quality p-n heterojunctions with a-Ga2O3. Two CVD growth techniques were employed in the fabrication of the heterostructure. A ~ 0.2-micron a-Cr2O3 layer was grown on a (0001) sapphire substrate using mist CVD at 800 °C. It possesses high morphological homogeneity and low roughness, which is acceptable for further epitaxial processes. Subsequently, Sn-doped a-Ga2O3 with a thickness of ~ 1.5 µm was grown on the a-Cr2O3 layer using HVPE at 500 °C. The feasibility of fabricating this heterostructure with the specified layer thickness and acceptable surface morphology using CVD techniques has been demonstrated

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Author Biographies

Pavel N. Butenko, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation

Cand. Sci. (Tech.), Senior
Researcher, Ioffe Institute of the Russian Academy of
Sciences (St. Petersburg, Russian Federation)

Roman B. Timashov, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation

Researcher, Ioffe Institute of
the Russian Academy of Sciences (St. Petersburg,
Russian Federation)

Andrey I. Stepanov, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation

Dr. Sci. (Phys.–Math.),
Researcher, Ioffe Institute of the Russian Academy of
Sciences (St. Petersburg, Russian Federation)

Alexey I. Pechnikov, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation; Perfect Crystals LLC, 38 Torez ave., St. Petersburg 194223, Russian Federation

Researcher, Ioffe Institute of
the Russian Academy of Sciences (St. Petersburg,
Russian Federation)

Andrey V. Chikiryaka, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation

Researcher, Ioffe Institute of
the Russian Academy of Sciences (St. Petersburg,
Russian Federation)

Liubov I. Guzilova, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation

Researcher, Ioffe Institute of the
Russian Academy of Sciences (St. Petersburg, Russian
Federation)

Sergey I. Stepanov, Perfect Crystals LLC, 38 Torez ave., St. Petersburg 194223, Russian Federation

Cand. Sci. (Phys.–Math.),
Researcher, Perfect Crystal LLC (St. Petersburg,
Russian Federation)

Vladimir I. Nikolaev, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation; Perfect Crystals LLC, 38 Torez ave., St. Petersburg 194223, Russian Federation

Cand. Sci. (Phys.–Math.),
Leading Researcher, Ioffe Institute of the Russian
Academy of Sciences (St. Petersburg, Russian
Federation)

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Published
2023-10-12
How to Cite
Butenko, P. N., Timashov, R. B., Stepanov, A. I., Pechnikov, A. I., Chikiryaka, A. V., Guzilova, L. I., Stepanov, S. I., & Nikolaev, V. I. (2023). Fabrication of a-Ga2O3:Sn/a-Cr2O3/a-Al2O3 heterostructure by mist CVD and HVPE. Condensed Matter and Interphases, 25(4), 542-547. https://doi.org/10.17308/kcmf.2023.25/11476
Section
Original articles