A study of gallium oxide by using the piezoelectric composite oscillator technique at a frequency of 100 kHz

Vladimir V. Kaminskii; Dmitrii A. Kalganov; Dmitrii I. Panov; Vladislav A. Spiridonov; Andrey I. Ivanov; Margarita V. Rozaeva; Dmitrii A. Bauman; Alexey E. Romanov

doi:10.17308/kcmf.2023.25/11484

Vladimir V. Kaminskii ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation https://orcid.org/0000-0002-4388-2459
Dmitrii A. Kalganov ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation https://orcid.org/0000-0003-1986-3693
Dmitrii I. Panov ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation https://orcid.org/0000-0001-8715-9505
Vladislav A. Spiridonov ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation https://orcid.org/0000-0001-5751-8597
Andrey I. Ivanov ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation https://orcid.org/0000-0003-0737-9079
Margarita V. Rozaeva ФГАОУ ВО «Национальный исследовательский университет ИТМО», пр. Кронверкский, 49, Санкт-Петербург 197101, Российская Федерация https://orcid.org/0009-0000-2978-5380
Dmitrii A. Bauman master student, Engineer at the Advanced Data Transfer System Institute, ITMO University (Saint Petersburg, Russian Federation). https://orcid.org/0000-0002-5762-5920
Alexey E. Romanov ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation https://orcid.org/0000-0003-3738-408X

DOI: https://doi.org/10.17308/kcmf.2023.25/11484

Keywords: Gallium oxide, Single crystal, Defect structure, Real structure, Semiconductor, Piezoelectric composite oscillator technique

Abstract

The article presents the results of the study of the mechanical properties and defect structure of gallium oxide (Ga₂O₃) by using the piezoelectric composite oscillator technique. Bulk samples of the Ga2O3 beta phase in the form of single crystals and their intergrowths were obtained by growth from a melt with a shaper (Stepanov technique). The research involved studying the dependences of the longitudinal elastic modulus and the damping of elastic vibrations at a frequency of 100 kHz on the strain amplitude. Changes in the elastic and microplastic properties of the samples at different temperatures were attributed to possible relaxation phenomena in the structure of the material.
Studying the defect structure in samples of pure and doped Ga₂O₃ is necessary to improve the technology for the production of large single crystals. The fundamental questions in this area are the influence of defects on the anisotropy of electrical conductivity, band structure, and other functional properties of the resulting semiconductor material. The purpose of this article is to establish the features of sample preparation, research, and interpretation of the results obtained by the piezoelectric composite oscillator technique for gallium oxide samples.
In the studied samples, the first longitudinal vibration mode was excited, which corresponded to a length of about 27 mm and a small cross-section of the sample. The temperature dependences in the region of low and high strain amplitudes were determined separately. The crystalline quality of the prepared samples was assessed by X-ray diffraction with the analysis of the rocking curve.
The value of Young’s modulus obtained along the growth axis (crystalline orientation <010>) in Ga₂O₃ crystals E≈260 GPa is in line with the results of previous studies. Relaxation peaks corresponding to various dislocation interactions were found on the temperature dependences of internal friction at a temperature of 280 K

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Author Biographies

Vladimir V. Kaminskii, ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation

Cand. Sci. (Phys.–Math.),
Head of the Laboratory, ITMO University (Saint
Petersburg, Russian Federation)

Dmitrii A. Kalganov, ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation

Junior Researcher at the
Advanced Data Transfer System Institute, ITMO
University (Saint Petersburg, Russian Federation)

Dmitrii I. Panov, ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation

Cand. Sci. (Phys.–Math.), Head of the Laboratory, ITMO University (Saint Petersburg, Russian Federation).

Vladislav A. Spiridonov, ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation

Engineer at the Advanced
Data Transfer System Institute, ITMO University (Saint
Petersburg, Russian Federation)

Andrey I. Ivanov, ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation

Engineer at the Advanced Data
Transfer System Institute, ITMO University (Saint
Petersburg, Russian Federation)

Margarita V. Rozaeva, ФГАОУ ВО «Национальный исследовательский университет ИТМО», пр. Кронверкский, 49, Санкт-Петербург 197101, Российская Федерация

master student, Engineer at
the Advanced Data Transfer System Institute, ITMO
University (Saint Petersburg, Russian Federation)

Dmitrii A. Bauman, master student, Engineer at the Advanced Data Transfer System Institute, ITMO University (Saint Petersburg, Russian Federation).

Cand. Sci. (Phys.–Math.),
Associate Professor at the Advanced Data Transfer
System Institute, ITMO University (Saint Petersburg, Russian Federation)

Alexey E. Romanov, ITMO University, 49 Kronverksky pr., St. Petersburg 197101, Russian Federation

Dr. Sci. (Chem.), Professor, Head
of the Advanced Data Transfer System Institute, ITMO
University (Saint Petersburg, Russian Federation)

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