ALUMINUM METALLIZATION SURFACE CLEANING WITH PLASMA TREATMENT

  • Evgeny V. Goncharenko 1 year post-graduate of Physical Faculty, Voronezh State University; e-mail: zews-00@mail.ru
  • Tatiana G. Menshikova Cand. Sci. (Phys.-Math.), Associate Professor, Department of Semiconductor and Microelectronics, Voronezh State University; e-mail: menshikova.vrn@mail.ru
  • Margarita V. Grechkina Engineer of the Center for Collective Use of Scientifie Equipment, Voronezh State University; e-mail: grechkina_m@mail.ru
  • Eugene N. Bormontov Dr. Sci. (Phys.–Math.), Head of Department of Physics of Semiconductors and Microelectronics, Voronezh State University; tel.: +7 (473) 2208481, e-mail: me144@phys.vsu.ru
Keywords: plasma treatment, aluminum metallization, pad, ultrasonic welding, FPGA

Abstract

The purpose of work is to select the optimum plasma etching mode for cleaning the aluminum surface from pollution.

METHODS AND METHODOLOGY. In this paper, FPGA chip`s pads aluminum metallization was the object of the study. The averaged thickness of aluminum was 1 micron. The contact pads sizes – 100х100 microns. FPGA got 256 contact pads.

AP-1000 Plasma Treatment System accommodated with the argon gas used for  aluminum surface cleaning.

Plasma influence control on the aluminum metallization, located on the FPGA pads, was carried out with the Bondjet BJ820 bonding the aluminum wire to the pads.

The surface morphology was investigated by scanning force microscopy in semi-contact mode by a scanning probe microscope (SPM) Solver P47 Pro.

RESULTS. The optimum mode of plasma treatment which gives quality bonds between the contact pads and the FPGA internal connection was obtained.

CONCLUSIONS:

1. The new technology of the aluminum metallization surface treatment using plasma etching with the 100% internal pin to the FPGA contact pads bonding was developed.
2. The presented technology of an aluminum metallization surface treatment allows to improve quality of the separation effort to the internal pin welded on the FPGA contact platform up to 20%.

ACKNOWLEDGEMENTS

The research results were obtained with equipment of Voronezh State University Centre for Collective Use of Scientific Equipment.

 

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References

1. Emelyanov V. A. Encapsulation of Integrated Circuits. Minsk, Polifakt Publ., 1998, 360 p. (in Russian)
2. Lanin V. Petukhov I. Components and Technologies, 2009, no. 8, pp. 124-128. (in Russian)
3. Gasanov I. S. Plasma and Beam Technology, 2007, p. 125. (in Russian)
4. Hui Yuen Peng, Mutharasu Devarajan, Teik Toon Lee. International Journal of Scientific & Engineering Research, 2014, vol. 5, iss. 12, pp. 908-912. Available at: (http://www.ijser.org/researchpaper/Comparison-of-Argon-and-Oxygen-Plasma-Treatments-on-LED-Chip.pdf
5. Yu Hin Chan, Jang-Kyo Kim, Deming Liu. J. of Electronic Materials, 2004, vol. 33, iss. 2, pp. 146-155. DOI: 10.1007/s11664-004-0285-5
6. Arutyunov P.A., Tolstikhina A.L., Demidov V.I. Zavodskaya Laboratoriya. Diagnostika Materialov, 1999, vol. 65, no. 9, pp. 31 – 41. (in Russian)
Published
2017-11-06
How to Cite
Goncharenko, E. V., Menshikova, T. G., Grechkina, M. V., & Bormontov, E. N. (2017). ALUMINUM METALLIZATION SURFACE CLEANING WITH PLASMA TREATMENT. Kondensirovannye Sredy I Mezhfaznye Granitsy = Condensed Matter and Interphases, 19(1), 51-56. https://doi.org/10.17308/kcmf.2017.19/176
Section
Статьи