EFFECT OF PULSED MAGNETIC FIELD ON THE TOPOGRAPHIC CHARACTERISTICS OF SINGLE-CRYSTAL GERMANIUM
Abstract
By the method of scanning force microscopy in contact mode has been studied the change of surface topology and surface properties of single-crystal germanium (111), doped with antimony. The samples were exposed to weak pulsed magnetic fields. 72 hours after brief exposure to a pulsed magnetic field was discovered by restructuring the surface with the formation of new types of structures. The formation of structures on the surface was accompanied by a change of roughness. Minimum roughness value was observed after 144 hours after treatment. Through hours 312 the value of the roughness increased to a value close to the original.
The change of microhardness Ge after exposure to pulsed magnetic fields were carried oscillatory character and was reduced to the minimum value through 168 hours after the start of the experiment.
By plasma etching after exposure to the magnetic field of the identified defective-deformation structure on the surface and in the bulk of the crystal. Revealed the formation of nanoclusters in the near surface region, the maximum number of which have been revealed by deep etching to 500 nm. The analysis of the size of discovered clusters and the dynamics of reducing the size to a minimum over time.
The method of the spreading resistance was investigated by surface conductivity of nanostructured Ge. It is shown that the nanoclusters formed have a dielectric nature.
The influence of weak magnetic field on structure of semiconductors with subsequent plasma-chemical etching can be used to create a dielectric clusters in a semiconducting matrix.
ACKNOWLEDGEMENTS
The research results were obtained with equipment of Voronezh State University Centre for Collective Use of Scientific Equipment.
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References
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