Термодинамика, кинетика и технология синтеза эпитаксиальных слоев карбида кремния на кремнии методом согласованного замещения атомов и его уникальные свойства. Обзор
Аннотация
В обзоре с единых позиций дается анализ нового метода роста эпитаксиальных пленок SiC на Si, основанного на согласованном замещении части атомов кремния в кристаллической решетке Si на атомы углерода. Изложена основная идея и теория нового метода синтеза эпитаксиальных пленок SiC на Si. Данный метод существенно отличатся от классических схем выращивания тонких пленок. Разработанный метод заключается в замене части атомов Si на C прямо внутри матрицы кремния, а не при помощи нанесения атомов на поверхность подложки. Метод позволяет решить одну из основных проблем гетероэпитаксии, а именно осуществить синтез низкодефектных и ненапряженных эпитаксиальных пленок при большом различии между параметрами решетки пленки и подложки.
По сути дела, впервые в мировой практике реализован метод согласованной замены атомов одного сорта другими прямо внутри исходного кристалла без разрушения его кристаллической структуры. Метод напоминает «генетический синтез» белковых структур в биологии. Качество структуры слоев, полученных данным методом, значительно превосходит качество пленок карбида кремния, выращенных на кремниевых подложках ведущими мировыми компаниями. Метод дешев и технологичен. Приведено сравнение нового метода роста с классическими методами роста тонких пленок. Изложен термодинамический и кинетический анализ процесса замещения атомов в твердой
фазе. На примере образования SiC описаны механизмы протекания широкого класса гетерогенных химических реакций между газовой фазой и твердым телом. В обзоре приведено описание нового метода синтеза эпитаксиальных слоев SiC на монокристаллических подложках сапфира, в основе которого лежит метод согласованного замещения атомов. Показано, что на границе раздела SiC/Si при данном методе роста возникает интерфейснй слой с нестандартными оптическими и электрофизическими свойствами. Необычные свойства вызваны схлопыванием (усадкой) материала, при котором карбид кремния, как новая фаза, отделяется от кремниевой матрицы. Кремний
подвергается аномально сильному сжатию. В результате подобной усадки каждая пятая химическая связь SiC полностью согласуется с каждой четвертой связью Si, остальные связи деформируются. Последнее приводит к изменению структуры поверхностных зон SiC, прилегающего к Si, и его превращению в «магнитный полуметалл». Эпитаксия пленок SiC на Si за счет согласованного замещения половины атомов Si на атомы C при отсутствии дислокаций несоответствия решеток обеспечивает высокое кристаллическое совершенство пленок SiC. Приводится описание наблюдаемых в структурах SiC/Si при комнатной температуре, в слабых магнитных полях двух квантовых эффектов – эффекта Мейснера–Оксенфельда и эффекта возникновения осцилляций Ааронова–Бома в полевых
зависимостях статической магнитной восприимчивости. Приводится описание обнаруженного явления фазового перехода носителей заряда в когерентное состояние с одновременным возникновением гигантского значения диамагнетизма порядка (1/4π) в слабых магнитных полях, что связвается с возникновением сверхпроводящео состояния.
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