Структурно-спектроскопические исследования эпитаксиально- доращиваемых контактных слоев GaN, n-GaN и n+-GaN
Аннотация
В работе демонстрируется, что с использованием технологии молекулярно-пучковой эпитаксии с плазменной активацией азота (МПЭ ПА) могут быть сформированы структурно-качественные эпитаксиально-доращиваемые контактные GaN, n-GaN и n+-GaN на виртуальных подложках GaN/c-Al2O3 в Ga-обогащенных условиях при относительно низких температурах роста ~700 °C.
Показано, что на начальной стадии роста контактных слоев происходит эффективная фильтрация дислокаций, прорастающих из буферного GaN слоя виртуальной подложки, сформированного методом MOCVD.
Выполненные на основе данных Рамановской микроспектроскопии расчёты величины остаточных напряжений указывают на высокое структурной качество GaN, n-GaN и n+-GaN контактных слоев независимо от уровня легирования кремнием.
Определенное с помощью метода передающей линии контактное сопротивление, приведенное к ширине площадки, для структуры с контактным слоем n+-GaN составило ~ 0.11 Ом·мм, а для n-GaN ~ 0.5 Ом·мм
Скачивания
Литература
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