Diffractometric studies of the PA MBE grown of GaN layers on silicon substrates without their nitridation and an intermediate AlN nucleation layers
Abstract
Purpose: The paper describes structural features of the growth of GaN layers synthesized by plasma-assisted molecular beam epitaxy on silicon substrates without substrate nitridation and without the formation of an aluminum-containing interlayer.
Experimental: High-resolution X-ray diffractometry was used to show that the proposed method can be used to grow strainfree GaN films.
It was found that in GaN layers grown directly on the Si substrate after its surface passivation by Ga atoms, the value of residual strain was at 300 MPa, while the use of indium atoms as a surfactant during the growth of the GaN layer resulted in a higher residual strain.
Conclusions: The obtained results are important for understanding the viability of the proposed approach for the formation of GaN layers directly integrated with Si without substrate nitridation and the formation of an aluminum-containing buffer. This method opens new opportunities for designing AIIIN-based optoelectronic devices
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References
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