Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer

Keywords: Porous silicon buffer layer, Heterostructures, Epitaxy

Abstract

       In this work, we studied the efficiency of introducing nanoporous silicon as a buffer layer in the growth of AlxGa1–xN/AlN/Si(111) on a single-crystal silicon by molecular beam growth technology. We also considered its influence on the morphological characteristics and atomic composition of the surface layers of heterostructures. As determined by X-ray diffraction, microscopic, and X-ray photoelectron methods, the heterostructure grown on Si(111) n-type monocrystalline silicon wafer with nanoporous por-Si buffer layer has a more homogeneous epitaxial layer, and the surface morphology of the layer is also more homogeneous.

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Author Biographies

Alexander S. Lenshin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation; Voronezh State University of Engineering Technologies, 19 pr. Revolyutsii, Voronezh 394036, Russian Federation

DSc in Physics and Mathematics, leading researcher at the Department of Solid State Physics and Nanostructures, Voronezh  State University; Associate Professor, Voronezh State University of Engineering Technologies (Voronezh, Russian Federation).

Pavel V. Seredin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

DSc in Physics and Mathematics,  Head of the Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation).

Dmitry S. Zolotukhin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

PhD student at the Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation).

Artemy N. Beltyukov, Udmurt Federal Research Centre of the Ural Branch of the Russian Academy of Sciences, 34 T. Baramzina ul., Izhevsk 426067, Russian Federation

PhD in Physics and Mathematics, Senior Researcher at the Udmurt Federal Research Center of the Ural Branch of the Russian Academy of Sciences (Izhevsk, Russian Federation).

Andrey M. Mizerov, Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Building 3, letter A, 8 Khlopin ul., Saint Petersburg 194021, Russian Federation

PhD in Physics and Mathematics,
Leading Researche ratthe Laboratory of
Nanoelectronics, Alferov Federal State Budgetary
Institution of Higher Education and Science Saint
Petersburg National Research Academic University of
the Russian Academy of Sciences (Saint Petersburg,
Russian Federation).

Igor A. Kasatkin, Saint Petersburg State University, 7/9 Universitetskaya naberezhnaya, Saint Petersburg 199034, Russian Federation

PhD in Geology and Mineralogy,
leading specialist in high resolution X-ray
diffractometry, Saint Petersburg State University,
Research Centre for X-ray Diffraction Studies (Saint
Petersburg, Russian Federation).

Ali O. Radam, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

PhD student at the Department of
Solid State Physics and Nanostructures, Voronezh
State University (Voronezh, Russian Federation).

Evelina P. Domashevskaya, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

DSc in Physics and
Mathematics, Professor at the Department of Solid
State Physics and Nanostructures, Voronezh State
University (Voronezh, Russian Federation).

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Published
2022-03-15
How to Cite
Lenshin, A. S., Seredin, P. V., Zolotukhin, D. S., Beltyukov, A. N., Mizerov, A. M., Kasatkin, I. A., Radam, A. O., & Domashevskaya, E. P. (2022). Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer. Kondensirovannye Sredy I Mezhfaznye Granitsy = Condensed Matter and Interphases, 24(1), 51-58. https://doi.org/10.17308/kcmf.2022.24/9055
Section
Original articles