Structural Rearrangement of a-SiOx:H Films with Pulse Photon Annealing

Keywords: silicon nanoclusters, silicon suboxides, pulse photon annealing, PPA, ultrasoft X-ray emission spectroscopy, USXES.

Abstract

Amorphous SiOx films with silicon nanoclusters are a new interesting material from the standpoint of the physics, technology, and possible practical applications, since such films can exhibit photoluminescence due to size quantization. Moreover, the optical properties of these structures can be controlled by varying the size and the content of silicon nanoclusters in the SiOx film, as well as by transforming nanoclusters into nanocrystals by means of high-temperature annealing. However, during the annealing of nonstoichiometric silicon oxide, significant changes can occur in the phase composition and the structure of the films. The results of investigations on the crystallization of silicon nanoclusters in a SiOx matrix have shown
that, even a very fast method of annealing using PPA leads to the formation of large silicon crystallites. This also causes the crystallization of at least a part of the oxide phase in the form of silicon hydroxide H6O7Si2. Moreover, in films with an initial content of pure silicon nanoclusters ≤ 50%, during annealing a part of the silicon is spent on the formation of oxide, and part of it is spent on the formation of silicon crystals. While in a film with an initial concentration of silicon nanoclusters ≥ 53%, on the contrary, upon annealing, there occurs a partial transition of silicon from the oxide phase to the growth of
Si crystals 

 

 

 

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Author Biographies

Vladimir A. Terekhov, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

DSc in Physics and
Mathematics, Professor at the Department of Solid
State and Nanostructure Physics, Voronezh State
University, Voronezh, Russian Federation; e-mail:
ftt@phys.vsu.ru.

Evgeny I. Terukov, Ioffe Institute, 26 Politekhnicheskaya str., Saint Petersburg 194021, Russian Federation

DSc in Technical Sciences, Head
of the Laboratory of Physical and Chemical Properties
of Semiconductors, Ioffe Institute of the Russian
Academy of Sciences, Saint Petersburg, Russian
Federation; e-mail: Eug.Terukov@mail.ioffe.ru.

Yury K. Undalov, Ioffe Institute, 26 Politekhnicheskaya str., Saint Petersburg 194021, Russian Federation

PhD in Technical Sciences, Senior
Researcher at the Laboratory of Physical and Chemical
Properties of Semiconductors, Ioffe Institute of the
Russian Academy of Sciences, Saint Petersburg,
Russian Federation; e-mail: undalov@mail.ioffe.ru.

Konstantin A. Barkov, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

PhD student, Head of the
Laborator y, Department of Solid State and
Nanostructure Physics, Voronezh State University,
Voronezh, Russian Federation; e-mail: barkov@phys.vsu.ru

Igor E. Zanin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

PhD in Physics and Mathematics,
Assistant Professor at the Department of General
Physics, Voronezh State University, Voronezh, Russian
Federation; e-mail: iezan@mail.ru

Oleg V. Serbin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

PhD in Physics and Mathematics,
Assistant Professor of the Department of Materials
Science and the Industry of Nanosystems, Voronezh State University, Voronezh, Russian Federation;
e-mail: deanery@chem.vsu.ru

Irina N. Trapeznikova, Ioffe Institute, 26 Politekhnicheskaya str., Saint Petersburg 194021, Russian Federation

DSc in Physics and
Mathematics, Professor, Ioffe Institute of the Russian
Academy of Sciences, Saint Petersburg, Russian
Federation; e-mail: trapez@mail.ioffe.ru.

Published
2020-12-15
How to Cite
Terekhov, V. A., Terukov, E. I., Undalov, Y. K., Barkov, K. A., Zanin, I. E., Serbin, O. V., & Trapeznikova, I. N. (2020). Structural Rearrangement of a-SiOx:H Films with Pulse Photon Annealing. Condensed Matter and Interphases, 22(4), 489-495. https://doi.org/10.17308/kcmf.2020.22/3119
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