Nanoscale semiconductor and dielectric films and magnetic nanocrystals – new directions of development of the scientific school of Ya. A. Ugai “Solid state chemistry and semiconductors”. Review
Abstract
New directions of development of the scientific school of Yakov Aleksandrovich Ugai “Solid state chemistry and semiconductors” were considered for the direction “Study of semiconductors and nanostructured functional films based on them”, supervised by I. Ya. Mittova. The study of students and followers of the scientific school of Ya. A. Ugai cover materials science topics in the field of solid-state chemistry and inorganic and physical chemistry. At the present stage of research, the emphasis is being placed precisely on nanoscale objects, since in these objects the main mechanisms of modern solid-state chemistry are most clearly revealed: the methods of synthesis - composition - structure (degree of dispersion) - properties. Under the guidance of Professor I. Ya. Mittova DSc (Chem.), research in two key areas is conducted:
“Nanoscale semiconductor and dielectric films” and “Doped and undoped nanocrystalline ferrites”. In the first area, the problem of creating high-quality semiconductor and dielectric nanoscale films on AIIIBV by the effect reasonably selected chemostimulators on the process of thermal oxidation of semiconductors and/or directed modification of the composition and properties of the films. They present the specific results achieved to date, reflecting the positive effect of chemostimulators and modifiers on the rate of formation of dielectric and semiconductor films of the nanoscale thickness range and their functional characteristics, which are promising for practical applications.
Nanomaterials based on yttrium and lanthanum orthoferrites with a perovskite structure have unique magnetic, optical, and catalytic properties. The use of various approaches to their synthesis and doping allowing to control the structure and properties in a wide range. In the field of magnetic nanocrystals under the supervision of Prof. I. Ya. Mittova studies of the effect of a doping impurity on the composition, structure, and properties of nanoparticles of yttrium and lanthanum orthoferrites by replacing the Y(La)3+ and Fe3+ cations are carried out. In the Socialist Republic of Vietnam one of the talented students of Prof. I. Ya. Mittova, Nguyen Anh Tien, performs studies in this area. To date, new methods for the synthesis of
nanocrystals of doped and undoped ferrites, including ferrites of neodymium, praseodymium, holmium, etc. have been developed.
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References
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Tomina E. V., Sladkopevtsev B. V., Dontsov A. I., Perfileva L. I., Mittova I. Y. Influence of nanoscale layers of the Mn3(P0.1V0.9O4)2 chemostimulatormodifier on the process of thermal oxidation of GaAs, its composition, and morphology of the resulting films. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 2020;22(1): 116–123. https://doi.org/10.17308/kcmf.2020.22/2535
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Mittova I. Ya., Tomina E. V., Lapenko A. A., Sladkopevtsev B. V. Kataliticheskoe deistvie vanadiya i ego oksida (V) v protsessakh oksidirovaniya poluprovodnikov AIIIBV. [Catalytic action of vanadium and its oxide (V) in the processes of oxidation of AIIIBV semiconductors]. Nanosystems: Physics, Chemistry, Mathematics. 2012;3(2): 116–138. Available at: https://www.elibrary.ru/item.asp?id=17881315 (In Russ.)
Ievlev, V. M., Mittova, I. Y., Samsonov, A. A., Tomina E. V., Kashkarov V. M. Catalytic effect of a nanolayer of the (V2O5 + PbO) composite in the thermal oxidation of InP crystals. Doklady Chemistry. 2007;417: 277–281. https://doi.org/10.1134/S0012500807120014
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Mittova I. Ya., Pshestanchik V. R., Kostryukov V. F., Donkareva I. A. Mutual effect of activators on chemostimulated GaAs thermal oxidation with spatially separated coupling stages. Russian Journal of Inorganic Chemistry. 2003;48(4): 480–482. Available at: https://elibrary.ru/item.asp?id=13436411
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Mittova I. Ya., Kostryukov V. F., Pshestanchik V. R., Donkareva I. A., Agapov B. L. Contribution from the solid-phase interactions of activating oxides to their nonlinear joint effect on the thermal oxidation of GaAs. Russian Journal of Inorganic Chemistry. 2008;53(7): 1018–1023. https://doi.org/10.1134/S0036023608070085
Kostryukov V. F., Donkareva I. A., Pshestanchik V. R., Agapov B. L., Mittova I. Ya., Lopatin S. I. GaAs thermal oxidation with participation of spatially separated activator oxides (MnO + PbO and MnO + V2O5). Russian Journal of Inorganic Chemistry. 2008;53(8): 1182–1186. https://doi.org/10.1134/S0036023608080056
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Kozhevnikova T. V., Penskoi P. K., Kostryukov V. F., Mittova I. Y., Kuznetsova I. V., Kutsev S. V. Role of an inert component in compositions with manganese (II) and manganese (IV) oxides in studying nonlinear effects in gaas thermal oxidation. Russian Journal of Inorganic Chemistry. 2010;55(12): 1857–1862. https://doi.org/10.1134/S0036023610120077
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Penskoi P. K., Salieva E. K., Kostryukov V. F., Rembeza S. I., Mittova I. Ya. Gazochuvstvitel’nost’ slabolegirovannykh sloev, poluchennykh okisleniem GaAs v prisutstvii PbO i Bi2O3 [Gas-sensitivity of the light-alloyed layers. Obtained by the oxidation of GaAs in the presence of PbO and Bi2O3]. Vestnik VGU Seriya
Khimiya. Biologiya. Farmatsiya. 2008;1: 26–31.Available at: https://elibrary.ru/item.asp?id=11615172 (In Russ.)
Kostryukov V. F., Mittova I. Ya. Ammonia response of thin films grown on GaAs using PbO + Bi2O3 mixtures. Inorganic Materials. 2015;51(5): 425– 429. https://doi.org/10.1134/S0020168515040056
Kostryukov V. F., Mittova I. Ya., Dimitrenko A. A. Chemically stimulated synthesis of gas-sensing films on the surface of GaAs. Inorganic Materials. 2017;53(5): 451–456. https://doi.org/10.1134/S0020168517050132
Kostryukov V. F., Mittova I. Ya., Ali Saud Gassensing properties of thin films grown on the surface of InP single crystals by thermal oxidation. Inorganic Materials. 2020;56(1): 66–71. https://doi.org/10.1134/S0020168520010070
Kostryukov V. F., Mittova I. Ya. Method for precision doping of thin films on gallium arsenide surface: Patent No 2538415 RF. Claim. 17.07.2013. Publ. 10.01.2015. Byul. №2013133382/28 1.
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Tomina E. V., Sladkopevtsev B. V., Mittova I. Ya., Zelenina L. S., Dontsov A. I., Tretyakov N. N., Gudkova Yu. N., Belashkova Yu. A. Effect of surface V2O5 nanolayers on the thermal oxidation kinetics of GaAs and the composition and morphology of resulting films. Inorganic Materials. 2015;51(11): 1138–1142. https://doi.org/10.1134/S0020168515110126
Mittova I. Y., Tomina E. V., Lapenko A. A., Sladkopevtsev B. V. Synthesis and catalytic performance of V2O5 nanoislands produced on the surface of InP crystals by electroexplosion. Inorganic Materials. 2010;46(4): 383–388. https://doi.org/10.1134/S0020168510040114
Mittova I. Ya., Tomina E. V., Tret’yakov N. N., Sladkopevtsev B. V. Zavisimost’ mekhanizma khemostimuliruyushchego deistviya V2O5 ot sposoba vvedeniya ego v sistemu pri termooksidirovanii InP
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Mittova I. Ya., Sladkopevtsev B. V., Tomina E. V., Samsonov A. A., Tretyakov N. N., Ponomarenko S. V. Preparation of dielectric films via thermal oxidation of MnO2/GaAs. Inorganic Materials. 2018;54(11): 1085–1092. https://doi.org/10.1134/S0020168518110109
Shvets V. A., Rykhlitskii, S. V., Mittova, I. Yа., Tomina E. V. Analysis of the optical and structural properties of oxide films on InP using spectroscopic ellipsometry. Technical Physics. 2013;58: 1638–1645. https://doi.org/10.1134/S1063784213110248
Mittova I. Ya., Tomina E. V., Sladkopevtsev B. V., Tret’Yakov N. N., Lapenko A. A., Shvets V. A. Highspeed determination of the thickness and spectral ellipsometry investigation of films produced by the thermal oxidation of InP and VxOy/InP structures. Inorganic Materials. 2013;49(2): 179–184. https://doi.org/10.1134/S0020168513020143
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Kostryukov V. F., Mittova I. Ya., Shvets V. A., Tomina E. V., Sladkopevtsev B. V., Tret’yakov N. N. Spectral ellipsometry study of thin films grown on GaAs by chemically stimulated thermal oxidation. Inorganic Materials. 2014;50(9): 882–887. https://doi.org/10.1134/S0020168514090052
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