Наноразмерные полупроводниковые и диэлектрические пленки и магнитные нанокристаллы – новые направления развития научной школы Я. А. Угая «Химия твердого тела и полупроводников». Обзор
Аннотация
Рассмотрены новые направления развития научной школы Якова Александровича Угая «Химия твердого тела и полупроводников» в разделе «Материаловедение полупроводников и наноразмерных функциональных пленок на их основе», руководимые И. Я. Миттовой. Работы учеников и последователей научной школы Я. А. Угая охватывают материаловедческую тематику в области химии твердого тела, неорганической и физической химии. На современном этапе исследований упор сделан именно на наноразмерные объекты, т. к. здесь наиболее ярко выявляется основная закономерность современной химии твердого тела: способ синтеза – состав – структура (степень дисперсности) – свойства. Под руководством д. х. н., проф. Миттовой И. Я. ведутся исследования в двух ключевых направлениях: «Наноразмерные полупроводниковые и диэлектрические пленки» и «Допированные и недопированные нанокристаллические ферриты». В первой области решается проблема создания качественных полупроводниковых
и диэлектрических наноразмерных пленок на AIIIBV за счёт воздействия на процесс термооксидирования полупроводников обоснованно выбранных хемостимуляров и/или направленной модификации состава и свойств пленок. Приведены достигнутые к настоящему моменту конкретные результаты, отражающие положительное влияние хемостимуляторов и модификаторов на темп формирования диэлектрических и полупроводниковых пленок наноразмерного диапазона толщины и их функциональные характеристики, имеющих перспективы
практического применения.
Наноматериалы на основе ортоферритов иттрия и лантана со структурой перовскита обладают уникальными магнитными, оптическими и каталитическими свойствами. Использование различных подходов к их синтезу и допированию позволяет в широком диапазоне управлять структурой и свойствами. В области магнитных нанокристаллов под руководством проф. Миттовой И. Я. проводятся исследования влияния допирующей примеси на состав, структуру и свойства наночастиц ортоферритов иттрия и лантана замещением катиона Y(La)3+ и Fe3+. В
рамках этого направления в Социалистической республике Вьетнам успешно работает один из талантливых учеников проф. И. Я. Миттовой – Нгуен Ань Тьен; к настоящему времени разработаны новые методики синтеза нанокристаллов допированных и недопированных ферритов, в том числе и ферритов неодима, празеодима, гольмия и т. п.
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Kostryukov V. F., Donkareva I. A., Pshestanchik V. R., Agapov B. L., Mittova I. Ya., Lopatin S. I. GaAs thermal oxidation with participation of spatially separated activator oxides (MnO + PbO and MnO + V2O5). Russian Journal of Inorganic Chemistry. 2008;53(8): 1182–1186. https://doi.org/10.1134/S0036023608080056
Mittova I. Ya., Lopatin S. I., Pshestanchik V. R., Kostryukov V. F., Sergeeva A. V., Penskoi P. K. Rol’ inertnogo komponenta Ga2O3 v kompozitsii s oksidomaktivatorom Sb2O3 v protsesse khemostimulirovannogo okisleniya GaAs [role of an inert component Ga2O3 in the composition with the activator oxide Sb2O3 in chemostimulated GaAs oxidation]. Zhurnal neorganicheskoi khimii. 2005;50(10): 1599–1602. Available at: https://elibrary.ru/item.asp?id=9153645 (In Russ.)
Penskoi P. K., Kostryukov V. F., Pshestanchik V. R., Mittova I. Ya. Effekt sovmestnogo vozdeistviya kompozitsii khemostimulyatorov (Sb2O3, Bi2O3, MnO2) s inertnym komponentom (Al2O3) v protsesse termooksidirovaniya arsenida galliya [Effect of the combined effect of chemostimulant compositions (Sb2O3, Bi2O3, MnO2) with an inert component (Al2O3) during thermal oxidation of gallium arsenide]. Doklady akademii nauk. 2007;414(6): 765–767. Available at: https://elibrary.ru/item.asp?id=9533571 (In Russ.)
Penskoi P. K., Pshestanchik V. R., Kostryukov V. F., Agapov B. V., Mittova I. Ya., Kuznetsova I. V. Nonadditive linearity in the chemostimulating effect of activator oxides + dlient compositions on GaAs thermal oxidation. Russian Journal of Inorganic Chemistry. 2008;53(2): 186–191. https://doi.org/10.1007/s11502-008-2006-0
Penskoi P. K., Mittova I. Ya., Kostryukov V. F., Kononova E. Yu., Reutova E. A. Vliyanie inertnogo komponenta A12O3 v kompozitsiyakh s oksidamiaktivatorami (Sb2O3, Bi2O3, MnO2) na protsess termooksidirovaniya GaAs [The influence of inert component Al2O3 in mixtures with oxide activators (Sb2O3, Bi2O3, MnO2) on the process of thermal oxidation of GaAs surface]. Kondensirovannye sredy i mezhfaznye granitsy. 2008;10(3): 236–243. Available at: https://elibrary.ru/item.asp?id=11688570 (In Russ.)
Penskoi P. K., Kostryukov V. F., Pshestanchik V. R., Mittova I. Ya., Kutsev S. V., Kuznetsova I. V. Effect of inert components (Y2O3, Al2O3, and Ga2O3) on the chemistimulating effect of the Sb2O3 activator of GaAs thermal oxidation. Russian Journal of Inorganic Chemistry. 2009;54(10): 1564–1570. https://doi.org/10.1134/S0036023609100118
Kozhevnikova T. V., Penskoi P. K., Kostryukov V. F., Mittova I. Y., Kuznetsova I. V., Kutsev S. V. Role of an inert component in compositions with manganese (II) and manganese (IV) oxides in studying nonlinear effects in gaas thermal oxidation. Russian Journal of Inorganic Chemistry. 2010;55(12): 1857–1862. https://doi.org/10.1134/S0036023610120077
Kozhevnikova T. V., Penskoi P. K., Kostryukov V. F., Mittova I. Ya., Agapov B. L., Kuznetsova I. V., Kutsev S. V. Termicheskoe okislenie GaAs pod vozdeistviem kompozitsii Sb2O3, Bi2O3, MnO, MnO2 i V2O5 s oksidami alyuminiya i ittriya [Thermal oxidation of gaas under influence of compositions of Sb2O3, Bi2O3, MnO, MnO2 and V2O5 with oxides of aluminium and yttrium]. Kondensirovannye sredy i mezhfaznye granitsy = Condensed matter and Interphases. 2010;12(3): 212–225. Available at: https://elibrary.ru/item.asp?id=15574165 (In Russ.)
Penskoi P. K., Salieva E. K., Kostryukov V. F., Rembeza S. I., Mittova I. Ya. Gazochuvstvitel’nost’ slabolegirovannykh sloev, poluchennykh okisleniem GaAs v prisutstvii PbO i Bi2O3 [Gas-sensitivity of the light-alloyed layers. Obtained by the oxidation of GaAs in the presence of PbO and Bi2O3]. Vestnik VGU Seriya
Khimiya. Biologiya. Farmatsiya. 2008;1: 26–31.Available at: https://elibrary.ru/item.asp?id=11615172 (In Russ.)
Kostryukov V. F., Mittova I. Ya. Ammonia response of thin films grown on GaAs using PbO + Bi2O3 mixtures. Inorganic Materials. 2015;51(5): 425– 429. https://doi.org/10.1134/S0020168515040056
Kostryukov V. F., Mittova I. Ya., Dimitrenko A. A. Chemically stimulated synthesis of gas-sensing films on the surface of GaAs. Inorganic Materials. 2017;53(5): 451–456. https://doi.org/10.1134/S0020168517050132
Kostryukov V. F., Mittova I. Ya., Ali Saud Gassensing properties of thin films grown on the surface of InP single crystals by thermal oxidation. Inorganic Materials. 2020;56(1): 66–71. https://doi.org/10.1134/S0020168520010070
Kostryukov V. F., Mittova I. Ya. Method for precision doping of thin films on gallium arsenide surface: Patent No 2538415 RF. Claim. 17.07.2013. Publ. 10.01.2015. Byul. №2013133382/28 1.
Kostryukov V.F., Mittova I. Ya., Sladkopevtsev B. V. Method of precision doping thin films on InP surface: Patent No 2632261 RF. Claim. 17.12.2015. Publ. 03.10.2017. Byul. №28.
Sladkopevtsev B. V., Tomina E. V., Mittova I. Ya., Tretyakov N. N. Method of creating nano-sized nanostructured oxide films on InP with application of vanadium pentaxide gel: Patent No 2550316 RF. Claim. 30.12.2013. Publ. 10.05.2015. Byul. № 13
Tomina E. V., Sladkopevtsev B. V., Mittova I. Ya., Zelenina L. S., Dontsov A. I., Tretyakov N. N., Gudkova Yu. N., Belashkova Yu. A. Effect of surface V2O5 nanolayers on the thermal oxidation kinetics of GaAs and the composition and morphology of resulting films. Inorganic Materials. 2015;51(11): 1138–1142. https://doi.org/10.1134/S0020168515110126
Mittova I. Y., Tomina E. V., Lapenko A. A., Sladkopevtsev B. V. Synthesis and catalytic performance of V2O5 nanoislands produced on the surface of InP crystals by electroexplosion. Inorganic Materials. 2010;46(4): 383–388. https://doi.org/10.1134/S0020168510040114
Mittova I. Ya., Tomina E. V., Tret’yakov N. N., Sladkopevtsev B. V. Zavisimost’ mekhanizma khemostimuliruyushchego deistviya V2O5 ot sposoba vvedeniya ego v sistemu pri termooksidirovanii InP
[Dependence of the mechanism of the chemostimulating action of V2O5 on the method of its introduction into
the system during thermal oxidation of InP.]. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 2013;15(3): 305–311.Available at: https://www.elibrary.ru/item.asp?id=2029
Tretyakov N. N., Mittova I. Ya., Sladkopevtsev B. V., Agapov B. L., Pelipenko D. I., Mironenko S. V. Surface morphology, composition, and structure of nanofilms grown on InP in the presence of V2O5. Inorganic Materials. 2015;51(7): 655-660. https://doi.org/10.1134/S002016851507016X
Mittova I. Ya., Sladkopevtsev B. V., Tomina E. V., Samsonov A. A., Tretyakov N. N., Ponomarenko S. V. Preparation of dielectric films via thermal oxidation of MnO2/GaAs. Inorganic Materials. 2018;54(11): 1085–1092. https://doi.org/10.1134/S0020168518110109
Shvets V. A., Rykhlitskii, S. V., Mittova, I. Yа., Tomina E. V. Analysis of the optical and structural properties of oxide films on InP using spectroscopic ellipsometry. Technical Physics. 2013;58: 1638–1645. https://doi.org/10.1134/S1063784213110248
Mittova I. Ya., Tomina E. V., Sladkopevtsev B. V., Tret’Yakov N. N., Lapenko A. A., Shvets V. A. Highspeed determination of the thickness and spectral ellipsometry investigation of films produced by the thermal oxidation of InP and VxOy/InP structures. Inorganic Materials. 2013;49(2): 179–184. https://doi.org/10.1134/S0020168513020143
Mittova I. Ya., Tomina E. V., Samsonov A. A., Sladkopevtsev B. V., Tret’yakov N. N., Shvets V. A. Determination of the thickness and optical constants of nanofilms produced by the thermal oxidation of InP with V2O5, V2O5 + PbO, and NiO + PbO chemical stimulator layers grown by magnetron sputtering. Inorganic Materials. 2013;49(10): 963–970. https://doi.org/10.1134/S0020168513100075
Kostryukov V. F., Mittova I. Ya., Shvets V. A., Tomina E. V., Sladkopevtsev B. V., Tret’yakov N. N. Spectral ellipsometry study of thin films grown on GaAs by chemically stimulated thermal oxidation. Inorganic Materials. 2014;50(9): 882–887. https://doi.org/10.1134/S0020168514090052
Sladkopevtsev B. V., Mittova I. Ya., Tomina E. V., Zabolotskaya A. V., Samsonov A. A., Dontsov A. I. Osobennosti kinetiki i mekhanizma formirovaniya plenok pri oksidirovanii geterostruktur V2O5/InP, sformirovannykh metoda mireaktivnogo magnetronnogo raspyleniya i elektricheskogo vzryva provodnika [Features of kinetics and echanism of films formation inoxidationof V 2O 5/ I n P heterostructures, formed by reactive magnetron sputtering and electric explosion of conductor]. Izvestiya vysshikh uchebnykh zavedenii. Fizika. 2014;57(7-2): 148–153. Available at: https://www.elibrary.ru/item.asp?id=23184829 (In Russ.)
Ugai Ya. A., Samoilov A. M., Synorov Yu. V., Yatsenko O. B., Zuev D. V. Poluchenie tonkikh plenok tellurida svintsa na kremnievykh podlozhkakh [Preparation of thin films of lead telluride on silicon substrates]. Neorganicheskie materialy. 1994;30(7): 898-902. Available at: https://elibrary.ru/item.asp?id=35103015 (In Russ.)
Ugai Y. A., Samoylov A. M., Sharov M. K., Tadeev A. V. Crystal microstructure of PbTe/Si and PbTe/SiO2/Si thin films. Thin Solid Films. 1998;336(1- 2): 196−200. https://doi.org/10.1016/S0040-6090(98)01278-4
Ugai Ya. A., Samoilov A. M., Synorov Yu. V., Yatsenko O. B. Electrical properties of thin PbTe films on Si substrates. Inorganic Materials. 2000;36(5): 449–453. https://doi.org/10.1007/BF02758045
Ugai Ya. A., Samoilov A. M., Sharov M. K., Arsenov A. V., Buchnev S. A. Vyrashchivanie plenok PbTe, legirovannykh galliem v protsesse ikh rosta, na Si-podlozhkakh pri pomoshchi modifitsirovannogo metoda “goryachei stenki” [Growing of PbTe films doped with gallium during their growth on Si substrates using a modified “hot wall” method.]. Poverkhnost’. Rentgenovskie, sinkhrotronnye i neitronnye issledovaniya. 2002;3: 28–34. (In Russ.)
Ugai Ya. A., Samoylov A. M., Buchnev S. A., Synorov Yu. V., Sharov M. K. Ga doping of thin PbTe films on Si substrates during growth. Inorganic Materials. 2002;38(5): 450–456. https://doi.org/10.1023/A:1015410703238
Ugai Ya. A., Samoylov A. M., Sharov M. K., Yatsenko O. B., Akimov B. A. Transport properties of Ga-doped PbTe thin films on Si substrates. Inorganic Materials. 2002; 38 (1): 12−16. https://doi.org/10.1023/A:1013687024227
Samoylov A. M., Buchnev S. A., Khoviv A. M., Dolgopolova E. A., Zlomanov V. P. Comparative study of point defects induced in PbTe thin films doped with Ga by different techniques. Materials Science in Semiconductor Processing. 2003;6(5-6): 481−485. https://doi.org/10.1016/j.mssp.2003.07.014
Samoylov A. M., Khoviv A. M., Buchnev S. A., Synorov Yu. V., Dolgopolova E. A. Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique. Journal of Crystal Growth. 2003;254(1-2): 55−64. https://doi.org/10.1016/S0022-0248(03)01022-4
Samoilov A. M., Buchnev S. A., Synorov Yu. V., Agapov B. L. , Khoviv A. M. Vyrashchivanie modifitsirovannym metodom “goryachei stenki” plenok PbTe, legirovannykh In neposredstvenno v protsesse sinteza [Рreparation of PbTe thin films doped with indium on Si substrates by modified “hot wall” technique]. Poverkhnost’. entgenovskie, sinkhrotronnye i neitronnye issledovaniya. 2004;1: 86-94. Available at: https://elibrary.ru/item.asp?id=17662304 (In Russ.)
Samoilov A. M., Buchnev S. A., Dolgopolova E. A., Khoviv A. M., Synorov Yu. V. Structural perfection of pbte films doped with indium during growth on Si substrates. Inorganic Materials. 2004;40(4): 349-354. https://doi.org/10.1023/B:INMA.0000023953.49486.2a6106 (In Russ.)
Dolgopolova E. A., Samoilov A. M., Synorov Yu. V., Khoviv A. M. Sintez legirovannykh In plenok PbTe s kontroliruemym soderzhaniem primesnykh atomov i otkloneniem ot stekhiometrii [Synthesis of In-doped PbTe films with controlled content of impurity atoms and deviation from stoichiometry]. Poverkhnost’. Rentgenovskie, sinkhrotronnye i neitronnye issledovaniya. 2008;10: 17–22. Available at: https://elibrary.ru/item.asp?id=11533187 (In Russ.)
Belenko S. V., Dolgopolova E. A., Samoilov A. M., Synorov Yu. V., Sharov M. K. Oblast’ rastvorimosti galliya v plenkakh tellurida svintsa, vyrashchennykh na kremnievykh podlozhkakh [Gallium solubility region in lead telluride films grown on silicon substrates]. Poverkhnost’. Rentgenovskie, sinkhrotronnye i neitronnye issledovaniya. 2010;2: 99–108. Available at: https://elibrary.ru/item.asp?id=13044799 (In Russ.)
Sharov M. K, Yatsenko O. B., Samoilov A. M. Elektrofizicheskie svoistva monokristallov tellurida svintsa, legirovannogo bromom [Electrophysical properties of single crystals of lead telluride doped with bromine.]. Poverkhnost’. Rentgenovskie, sinkhrotronnye i neitronnye issledovaniya. 2010;7: 77–79. Available at:
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Samoylov A. M., Agapov B. L., Belenko S. V., Dolgopolova E. A., Khoviv A. M. Electrical properties and mechanisms of the point defect formation in PbTe(ln) films prepared by modified “Hot Wall” technique. Functional Materials. 2011;18(1): 29−36. Available at: https://elibrary.ru/item.asp?id=18002406
Samoylov A. M., Belenko S. V., Dolgopolova E. A., Khoviv A. M., Synorov Y. V. The solubility region of Ga in PbTe films prepared on Si-substrates by modified “Hot Wall” technique. Functional Materials. 2011;18(2): 181−188. Available at: https://www.elibrary.ru/item.asp?id=18002278
Samoylov A. M., Belenko S. V., Sharov M. K., Dolgopolova E. A., Zlomanov V. P. The deviation from a stoichiometry and the amphoteric behaviour of Ga in PbTe/Si films. Journal of Crystal Growth. 2012;351(1):
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Naumov A. V., Samoilov A. M., Lopatin S. I. Thermodynamic functions of mixing the melts in the Ga-Pb system. Russian Journal of General Chemistry. 2013;83(1): 26–31. https://doi.org/10.1134/S1070363213010040
Samoilov A. M., Belenko S. V., Siradze B. A., Toreev A. S., Dontsov A. I., Filonova I. V. Plotnosti dislokatsii
v plenkakh PbTe, vyrashchennykh na podlozhkakh Si (100) i BaF2 (100) modifitsirovannym metodom «goryachei stenki» [Dislocation densities in PbTe films grown on Si (100) and BaF2 (100) substrates by the modified hot wall method]. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 2013;15(3): 322-331. Available at: https://elibrary.ru/item.asp?id=20296109 (In Russ., abstract in Eng.)
Akimov A. N., Klimov A. E., Samoilov A. M., Shumskii V. N., Epov V. S. Zavisimost’ kinetiki fototoka v plenkakh Pbx–1SnxTe ot urovnya osveshcheniya i vremeni ekspozitsii [Dependence of photocurrent kinetics in Pbx-1SnxTe films on illumination intensity and duration of exposure]. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases.. 2013;15(4): 378–381. Available at: https://elibrary.ru/item.asp?id=20931228 (In Russ., abstract in Eng.)
Samoilov A. M., Belenko S. V., Sharov M. K., Lopatin S. I., Synorov Y. V. Synthesis of films in the system Ga-Pb with precision control over quantitative composition. Russian Journal of General Chemistry. 2015;85(10): 2242–2251. https://doi.org/10.1134/S1070363215100059
Marikutsa A. V., Rumyantseva M. N., Gaskov A. M., Samoylov A. M. Nanocrystalline tin dioxide: Basics in relation with gas sensing phenomena. Part I. Physical and chemical properties and sensor signal formation. Inorganic Materials. 2015;51(13): 1329−1347. https://doi.org/10.1134/S002016851513004X
Ievlev V. M., Kushchev S. B., Sinel’nikov A. A., Soldatenko S. A., Ryabtsev S. V., Bosykh M. A., Samoilov A. M. Struktura geterosistem plenka SnO2–ostrovkovyi kondensat metalla (Ag, Au, Pd) [Structure of heterosystems SnO2 film – island condensate of metal (Ag, Au, Pd)]. Neorganicheskie materialy. 2016;52(7): 757–764. https://doi.org/10.7868/S0002337X1607006X (In Russ.)
Ryabtsev S. V., Shaposhnik A. V., Samoilov A. M., Sinel’nikov A. A., Soldatenko S. A., Kushchev S. B.,
Ievlev V. M. Tonkie plenki oksida palladiya dlya gazovykh sensorov [Palladium Oxide Thin Films for Gas Sensors]. Doklady Akademii nauk, seriya Fizicheskaya khimiya. 2016;470(5): 550–553. https://doi.org/10.7868/s0869565216290168 (In Russ.)
Marikutsa A. V., Rumyantseva M. N., Gaskov A. M., Samoylov A. M. Nanocrystalline tin dioxide: Basics in relation with gas sensing phenomena. Part II. Active centers and sensor behavior. Inorganic Materials. 2016;52(13): 1311–1338. https://doi.org/10.1134/S0020168516130045
Ievlev V. M., Ryabtsev S. V., Shaposhnik A. V., Samoylov A. M., Kuschev S. B., Sinelnikov A. A. Ultrathin films of palladium oxide for oxidizing gases detecting. Procedia Engineering. 2016;168: 1106−1109. https://doi.org/10.1016/j.proeng.2016.11.357
Ryabtsev S. V., Ievlev V. M., Samoylov A. M., Kuschev S. B., Soldatenko S. A. Microstructure and electrical properties of palladium oxide thin films for oxidizing gases detection. Thin Solid Films. 2017;636: 751−759. https://doi.org/10.1016/j.tsf.2017.04.009
Samoylov, A. M., Gvarishvili, L. J., Ivkov, S. A., Pelipenko, D. I., Badica, P. Two-stage Synthesis of palladium (II) oxide nanocrystalline powders for gas sensor. Research & Development in Material Sciences. 2018; 8(2):1−7. https://doi.org/10.31031/RDMS.2018.08.000682
Ievlev V. M., Ryabtsev S. V., Samoylov A. M., Shaposhnik A. V., Kuschev S. B., Sinelnikov A. A. Thin and ultrathin films of palladium oxide for oxidizing gases detection. Sensors and Actuators B: Chemical. 2018;255(2): 1335–1342. https://doi.org/10.1016/j.snb.2017.08.121
Samoilov A. M. , Kuz’minykh O. G. , Synorov Yu. V., Ivkov S. A., Agapov B. L., Belonogov E. K. Morfologiya poverkhnosti plenok PbTe/Si (100), sintezirovannykh modifitsirovannym metodom “goryachei stenki” [Surface morphology of PbTe/Si (100) films synthesized by modified “hot wall” epitaxy technique]. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 2018;20(1): 102–114. https://doi.org/10.17308/
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Samoylov A. M., Kuzminykh O. G., Belonogov E. K., Agapov B. L., Synorov Y. V., Belenko S. V. Growth kinetics and microstructure of PbTe films produced on Si and BaF2 substrates by a modified hotwall method. Inorganic Materials. 2018;54(4): 338-348. https://doi.org/10.1134/S002016851804012X
Samoylov A. M., Ryabtsev S. V., Popov V. N., Badica P. Palladium (II) oxide nanostructures as promising materials for gas sensors. In book: Novel Nanomaterials Synthesis and Applications. Edited by George Kyzas. UK, London: IntechOpen Publishing House; 2018. 211–229 p. https://doi.org/10.5772/intechopen.72323
Samoylov A. M., Ryabtsev S. V., Chuvenkova O. A, Ivkov S. S., Sharov M. К., Turishchev S. Yu. Crystal structure and surface phase composition of palladium oxides thin films for gas sensors. In book: SATF 2018. Science and Applications of Thin Films, Conference & Exhibition. Proceeding Book.: 17 to 21 September 2018. Turkey: Izmir, Izmir Institute of Technology; 2018. p. 43–56.
Samoylov A. M., Ivkov S. A., Pelipenko D. I., Sharov M. K., Tsyganova V. O., Agapov B. L., Tutov E. A., Badica P. Structural changes in palladium nanofilms during thermal oxidation. Inorganic Materials. 2020;56(10): 1020–1026. https://doi.org/10.1134/S0020168520100131
Samoilov A. M., Pelipenko D. I., Kuralenko N. S. Raschet oblasti nestekhiometrii nanokristallicheskikh plenok oksida palladiya (II) [Calculation of the nonstoichiometry area of nanocrystalline palladium (II) oxide films]. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 2021;23(1): 62–72. https://doi.org/10.17308/kcmf.2021.23/3305
Ponomareva N. I. , Popr ygina T. D. , Lesovoi M. V., Karpov S. I. Effect of alizarin red S on the formation of hydroxyapatite crystals. Russian Journal of General Chemistry. 2008;78(4): 521-526. https://doi.org/10.1134/S1070363208040038
Ponomareva N. I., Poprygina T. D., Karpov S. I., Lesovoi M. V., Agapov B. L. Mikroemul’sionnyi sposob polucheniya gidroksiapatita [Microemulsion method for producing hydroxyapatite]. Zhurnal obshchei khimii. 2010;80(5): 735–738. (In Russ.)
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Ponomareva N. I. , Popr ygina T. D. , Lesovoi M. V., Sokolov Yu. V., Agapov B. L. Crystal structure and composition of hydroxyapatite biocomposites prepared at excess of calcium ions. Russian Journal of General Chemistry. 2009;79(2): 186–190. https://doi.org/10.1134/S1070363209020030
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Ponomareva N. I., Poprygina T. D., Lesovoi M. V., Sokolov Yu. V. Vliyanie primesei zheleza na poluchenie
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Ponomareva N. I., Poprygina T. D. Procedure for application of coating on items out of titanium: Patent No. 2453630 RF. Claim. 11.01.2011. Publ. 20.06.2012. Byul. No 17.
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