Nanoscale semiconductor and dielectric films and magnetic nanocrystals – new directions of development of the scientific school of Ya. A. Ugai “Solid state chemistry and semiconductors”. Review

Keywords: Semiconductors, Dielectrics, Magnetic nanocrystals, Ferrites, Nanoscale films, Nanocrystals

Abstract

New directions of development of the scientific school of Yakov Aleksandrovich Ugai “Solid state chemistry and semiconductors” were considered for the direction “Study of semiconductors and nanostructured functional films based on them”, supervised by I. Ya. Mittova. The study of students and followers of the scientific school of Ya. A. Ugai cover materials science topics in the field of solid-state chemistry and inorganic and physical chemistry. At the present stage of research, the emphasis is being placed precisely on nanoscale objects, since in these objects the main mechanisms of modern solid-state chemistry are most clearly revealed: the methods of synthesis - composition - structure (degree of dispersion) - properties. Under the guidance of Professor I. Ya. Mittova DSc (Chem.), research in two key areas is conducted:
“Nanoscale semiconductor and dielectric films” and “Doped and undoped nanocrystalline ferrites”. In the first area, the problem of creating high-quality semiconductor and dielectric nanoscale films on AIIIBV by the effect reasonably selected chemostimulators on the process of thermal oxidation of semiconductors and/or directed modification of the composition and properties of the films. They present the specific results achieved to date, reflecting the positive effect of chemostimulators and modifiers on the rate of formation of dielectric and semiconductor films of the nanoscale thickness range and their functional characteristics, which are promising for practical applications.
Nanomaterials based on yttrium and lanthanum orthoferrites with a perovskite structure have unique magnetic, optical, and catalytic properties. The use of various approaches to their synthesis and doping allowing to control the structure and properties in a wide range. In the field of magnetic nanocrystals under the supervision of Prof. I. Ya. Mittova studies of the effect of a doping impurity on the composition, structure, and properties of nanoparticles of yttrium and lanthanum orthoferrites by replacing the Y(La)3+ and Fe3+ cations are carried out. In the Socialist Republic of Vietnam one of the talented students of Prof. I. Ya. Mittova, Nguyen Anh Tien, performs studies in this area. To date, new methods for the synthesis of
nanocrystals of doped and undoped ferrites, including ferrites of neodymium, praseodymium, holmium, etc. have been developed.

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Author Biographies

Irina Ya. Mittova, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

DSc in Chemistry, Professor at
the Department of Materials Science and the Industry
of Nanosystems, Voronezh State University, Voronezh,
Russian Federation; e-mail: imittova@mail.ru

Boris V. Sladkopevtsev, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

PhD in Chemistry, Associate
Professor, Department of Materials Science and the
Industry of Nanosystems, Voronezh State University,
Voronezh, Russian Federation; e-mail: dp-kmins@yandex.ru

Valentina O. Mittova, Voronezh State Medical University named after N. N. Burdenko, 12 Studencheskaya Street, Voronezh 394036, Russian Federation

PhD in Biology, Associate
Professor, Department of Biochemistry, Voronezh
State Medical University named after N. N. Burdenko,
Voronezh, Russian Federation; e-mail: vmittova@mail.ru

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Tomina E. V., Sladkopevtsev B. V., Dontsov A. I., Perfileva L. I., Mittova I. Y. Influence of nanoscale layers of the Mn3(P0.1V0.9O4)2 chemostimulatormodifier on the process of thermal oxidation of GaAs, its composition, and morphology of the resulting films. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 2020;22(1): 116–123. https://doi.org/10.17308/kcmf.2020.22/2535

Mittova I. Y., Tomina E. V., Sladkopevtsev B. V., Dontsov A. I. Effect of different types of annealing on the thermal oxidation of VxOy/InP structures formed by the deposition of vanadium(V) oxide gel on the phase composition and morphology of films. Journal of Surface Investigation. X-ray, Synchrotron and Neutron

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Mittova I. Ya., Tomina E. V., Lapenko A. A., Khorokhordina A. O. Solid-state reactions during thermal oxidation of vanadium-modified GaAs surfaces. Inorganic Materials. 2004;40(5): 441–444. https://doi.org/10.1023/B:INMA.0000027588.78546.af

Mittova I. Ya., Tomina E. V., Lapenko A. A., Sladkopevtsev B. V. Kataliticheskoe deistvie vanadiya i ego oksida (V) v protsessakh oksidirovaniya poluprovodnikov AIIIBV. [Catalytic action of vanadium and its oxide (V) in the processes of oxidation of AIIIBV semiconductors]. Nanosystems: Physics, Chemistry, Mathematics. 2012;3(2): 116–138. Available at: https://www.elibrary.ru/item.asp?id=17881315 (In Russ.)

Ievlev, V. M., Mittova, I. Y., Samsonov, A. A., Tomina E. V., Kashkarov V. M. Catalytic effect of a nanolayer of the (V2O5 + PbO) composite in the thermal oxidation of InP crystals. Doklady Chemistry. 2007;417: 277–281. https://doi.org/10.1134/S0012500807120014

Mittova I. Y., Sladkopevtsev B. V., Samsonov A. A., Tomina E. V., Andreenko S. Y., Kostenko P. V. Growth and properties of nanofilms produced by the thermal oxidation of MnO2/InP under the effect of Mn3(PO4)2. Inorganic Materials. 2019;55(9): 915–919 https://doi.org/10.1134/S0020168519090073

Mittova I. Ya., Pshestanchik V. R., Kostryukov V. F. Nonlinear effect of the joint action of activators on thermal oxidation of gallium arsenide. Doklady Physical Chemistry. 1996;349(4-6): 196–198. Available at: https://www.elibrary.ru/item.asp?id=13233187

Mittova I. Ya., Pshestanchik V. R., Kostryukov V. F., Kuznetsov N. T. Alternating nonlinearity of the joint activating effect of binary mixtures of p-element oxides on the chemically activated thermal GаAs oxidation. Doklady Chemistry. 2001;378(4-6): 165-167. https://doi.org/10.1023/A:1019238812687

Mittova I. Ya., Pshestanchik V. R., Pinyaeva O. A., Kostryukov V. F., Skorokhodova S. M. Nonadditive oxides influence in (CrO3-PbO) and (CrO3-V2O5) compositions as activators of thermal oxidation of gallium arsenide. Doklady Chemistry. 2002;385(4-6): 212–214. https://doi.org/10.1023/A:1019998719921

Mittova I. Ya., Pshestanchik V. R., Kostryukov V. F., Donkareva I. A., Saratova A. Yu. Chemostimulated GaAs thermal oxidation under the joint action of manganese (IV) oxide with lead (II) oxide and vanadium (V) oxide. Russian Journal of Inorganic Chemistry. 2004;49(7) 991–994. Available at: https://elibrary.ru/item.asp?id=13464912

Mittova I. Ya., Kostryukov V. F., Donkareva I. A., Pshestanchik V. R., Lopatin S. I., Saratova A. Yu. Nonlinear effects of MnO + PbO and MnO + V2O5 compositions on GaAs thermal oxidation. Russian Journal of Inorganic Chemistry. 2005;50(6): 869–873. Available at: https://elibrary.ru/item.asp?id=13487639

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Mittova I. Ya., Kostryukov V. F. GaAs thermal oxidation activated by the coaction of p-block oxides. Nanosystems: Physics, Chemistry, Mathematics. 2014;5(3): 417–426. Available at: http://www.mathnet.ru/links/8364620026a0f40f5d8a284be0ba04bf/nano872.pdf

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Mittova I. Y., Tretyakov N. N., Kostryukov V. F., Sladkopevtsev B. V. Combined inf luence of chemostimulator oxides V2O5 and MnO2 introduced via the gas phase on InP thermal oxidation. Russian Journal of General Chemistry. 2015;85(4): 796–801. https://doi.org/10.1134/S1070363215040040

Mittova I. Ya., Kostryukov V. F., Donkareva I. A., Penskoi P. K., Pinyaeva O. A., Pshestanchik V. R. MnO + MnO2 mixture as a nonadditive activator of GaAs thermal oxidation. Russian Journal of General Chemistry. 2005;50(1): 15–19. Available at: https://elibrary.ru/item.asp?id=13497054

Losev V. N., Kudrina Yu. V., Trofimchuk A. K., Komozin P. N. Sorption of ruthenium (III) and ruthenium (IV) on silica gels chemically modified with mercapto and disulfide groups. Russian Journal of Inorganic Chemistry. 2005;50(4): 577–581. Available at: https://elibrary.ru/item.asp?id=13481209

Mittova I. Ya., Pshestanchik V. R., Kostryukov V. F., Donkareva I. A. Prostranstvennaya lokalizatsiya vzaimodeistvii mezhdu soedineniyami-aktivatorami pri khemostimulirovannom termooksidirovanii GaAs [Space localisation of linking interactions between activating compounds at the course of chemically stimulated GaAs thermal oxidation]. Doklady akademii nauk. 2002;386(4): 499–501. Available at: https://elibrary.ru/item.asp?id=44462420 (In Russ.)

Mittova I. Ya., Pshestanchik V. R., Kostryukov V. F., Donkareva I. A. Mutual effect of activators on chemostimulated GaAs thermal oxidation with spatially separated coupling stages. Russian Journal of Inorganic Chemistry. 2003;48(4): 480–482. Available at: https://elibrary.ru/item.asp?id=13436411

Kostryukov V. F., Pshestanchik V. R., Donkareva I. A., Agapov B. L., Mittova I. Ya., Lopatin S. I. Role of solid- and gas-phase interactions in the coaction of the oxides in MnO2 + PbO and MnO2 + V2O5 compositions activating the thermal oxidation of GaAs. Russian Journal of Inorganic Chemistry. 2007;52(10): 1498–1502. https://doi.org/10.1134/S0036023607100038

Mittova I. Ya., Kostryukov V. F., Pshestanchik V. R., Donkareva I. A., Agapov B. L. Contribution from the solid-phase interactions of activating oxides to their nonlinear joint effect on the thermal oxidation of GaAs. Russian Journal of Inorganic Chemistry. 2008;53(7): 1018–1023. https://doi.org/10.1134/S0036023608070085

Kostryukov V. F., Donkareva I. A., Pshestanchik V. R., Agapov B. L., Mittova I. Ya., Lopatin S. I. GaAs thermal oxidation with participation of spatially separated activator oxides (MnO + PbO and MnO + V2O5). Russian Journal of Inorganic Chemistry. 2008;53(8): 1182–1186. https://doi.org/10.1134/S0036023608080056

Mittova I. Ya., Lopatin S. I., Pshestanchik V. R., Kostryukov V. F., Sergeeva A. V., Penskoi P. K. Rol’ inertnogo komponenta Ga2O3 v kompozitsii s oksidomaktivatorom Sb2O3 v protsesse khemostimulirovannogo okisleniya GaAs [role of an inert component Ga2O3 in the composition with the activator oxide Sb2O3 in chemostimulated GaAs oxidation]. Zhurnal neorganicheskoi khimii. 2005;50(10): 1599–1602. Available at: https://elibrary.ru/item.asp?id=9153645 (In Russ.)

Penskoi P. K., Kostryukov V. F., Pshestanchik V. R., Mittova I. Ya. Effekt sovmestnogo vozdeistviya kompozitsii khemostimulyatorov (Sb2O3, Bi2O3, MnO2) s inertnym komponentom (Al2O3) v protsesse termooksidirovaniya arsenida galliya [Effect of the combined effect of chemostimulant compositions (Sb2O3, Bi2O3, MnO2) with an inert component (Al2O3) during thermal oxidation of gallium arsenide]. Doklady akademii nauk. 2007;414(6): 765–767. Available at: https://elibrary.ru/item.asp?id=9533571 (In Russ.)

Penskoi P. K., Pshestanchik V. R., Kostryukov V. F., Agapov B. V., Mittova I. Ya., Kuznetsova I. V. Nonadditive linearity in the chemostimulating effect of activator oxides + dlient compositions on GaAs thermal oxidation. Russian Journal of Inorganic Chemistry. 2008;53(2): 186–191. https://doi.org/10.1007/s11502-008-2006-0

Penskoi P. K., Mittova I. Ya., Kostryukov V. F., Kononova E. Yu., Reutova E. A. Vliyanie inertnogo komponenta A12O3 v kompozitsiyakh s oksidamiaktivatorami (Sb2O3, Bi2O3, MnO2) na protsess termooksidirovaniya GaAs [The influence of inert component Al2O3 in mixtures with oxide activators (Sb2O3, Bi2O3, MnO2) on the process of thermal oxidation of GaAs surface]. Kondensirovannye sredy i mezhfaznye granitsy. 2008;10(3): 236–243. Available at: https://elibrary.ru/item.asp?id=11688570 (In Russ.)

Penskoi P. K., Kostryukov V. F., Pshestanchik V. R., Mittova I. Ya., Kutsev S. V., Kuznetsova I. V. Effect of inert components (Y2O3, Al2O3, and Ga2O3) on the chemistimulating effect of the Sb2O3 activator of GaAs thermal oxidation. Russian Journal of Inorganic Chemistry. 2009;54(10): 1564–1570. https://doi.org/10.1134/S0036023609100118

Kozhevnikova T. V., Penskoi P. K., Kostryukov V. F., Mittova I. Y., Kuznetsova I. V., Kutsev S. V. Role of an inert component in compositions with manganese (II) and manganese (IV) oxides in studying nonlinear effects in gaas thermal oxidation. Russian Journal of Inorganic Chemistry. 2010;55(12): 1857–1862. https://doi.org/10.1134/S0036023610120077

Kozhevnikova T. V., Penskoi P. K., Kostryukov V. F., Mittova I. Ya., Agapov B. L., Kuznetsova I. V., Kutsev S. V. Termicheskoe okislenie GaAs pod vozdeistviem kompozitsii Sb2O3, Bi2O3, MnO, MnO2 i V2O5 s oksidami alyuminiya i ittriya [Thermal oxidation of gaas under influence of compositions of Sb2O3, Bi2O3, MnO, MnO2 and V2O5 with oxides of aluminium and yttrium]. Kondensirovannye sredy i mezhfaznye granitsy = Condensed matter and Interphases. 2010;12(3): 212–225. Available at: https://elibrary.ru/item.asp?id=15574165 (In Russ.)

Penskoi P. K., Salieva E. K., Kostryukov V. F., Rembeza S. I., Mittova I. Ya. Gazochuvstvitel’nost’ slabolegirovannykh sloev, poluchennykh okisleniem GaAs v prisutstvii PbO i Bi2O3 [Gas-sensitivity of the light-alloyed layers. Obtained by the oxidation of GaAs in the presence of PbO and Bi2O3]. Vestnik VGU Seriya

Khimiya. Biologiya. Farmatsiya. 2008;1: 26–31.Available at: https://elibrary.ru/item.asp?id=11615172 (In Russ.)

Kostryukov V. F., Mittova I. Ya. Ammonia response of thin films grown on GaAs using PbO + Bi2O3 mixtures. Inorganic Materials. 2015;51(5): 425– 429. https://doi.org/10.1134/S0020168515040056

Kostryukov V. F., Mittova I. Ya., Dimitrenko A. A. Chemically stimulated synthesis of gas-sensing films on the surface of GaAs. Inorganic Materials. 2017;53(5): 451–456. https://doi.org/10.1134/S0020168517050132

Kostryukov V. F., Mittova I. Ya., Ali Saud Gassensing properties of thin films grown on the surface of InP single crystals by thermal oxidation. Inorganic Materials. 2020;56(1): 66–71. https://doi.org/10.1134/S0020168520010070

Kostryukov V. F., Mittova I. Ya. Method for precision doping of thin films on gallium arsenide surface: Patent No 2538415 RF. Claim. 17.07.2013. Publ. 10.01.2015. Byul. №2013133382/28 1.

Kostryukov V.F., Mittova I. Ya., Sladkopevtsev B. V. Method of precision doping thin films on InP surface: Patent No 2632261 RF. Claim. 17.12.2015. Publ. 03.10.2017. Byul. №28.

Sladkopevtsev B. V., Tomina E. V., Mittova I. Ya., Tretyakov N. N. Method of creating nano-sized nanostructured oxide films on InP with application of vanadium pentaxide gel: Patent No 2550316 RF. Claim. 30.12.2013. Publ. 10.05.2015. Byul. № 13

Tomina E. V., Sladkopevtsev B. V., Mittova I. Ya., Zelenina L. S., Dontsov A. I., Tretyakov N. N., Gudkova Yu. N., Belashkova Yu. A. Effect of surface V2O5 nanolayers on the thermal oxidation kinetics of GaAs and the composition and morphology of resulting films. Inorganic Materials. 2015;51(11): 1138–1142. https://doi.org/10.1134/S0020168515110126

Mittova I. Y., Tomina E. V., Lapenko A. A., Sladkopevtsev B. V. Synthesis and catalytic performance of V2O5 nanoislands produced on the surface of InP crystals by electroexplosion. Inorganic Materials. 2010;46(4): 383–388. https://doi.org/10.1134/S0020168510040114

Mittova I. Ya., Tomina E. V., Tret’yakov N. N., Sladkopevtsev B. V. Zavisimost’ mekhanizma khemostimuliruyushchego deistviya V2O5 ot sposoba vvedeniya ego v sistemu pri termooksidirovanii InP

[Dependence of the mechanism of the chemostimulating action of V2O5 on the method of its introduction into

the system during thermal oxidation of InP.]. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 2013;15(3): 305–311.Available at: https://www.elibrary.ru/item.asp?id=2029

Tretyakov N. N., Mittova I. Ya., Sladkopevtsev B. V., Agapov B. L., Pelipenko D. I., Mironenko S. V. Surface morphology, composition, and structure of nanofilms grown on InP in the presence of V2O5. Inorganic Materials. 2015;51(7): 655-660. https://doi.org/10.1134/S002016851507016X

Mittova I. Ya., Sladkopevtsev B. V., Tomina E. V., Samsonov A. A., Tretyakov N. N., Ponomarenko S. V. Preparation of dielectric films via thermal oxidation of MnO2/GaAs. Inorganic Materials. 2018;54(11): 1085–1092. https://doi.org/10.1134/S0020168518110109

Shvets V. A., Rykhlitskii, S. V., Mittova, I. Yа., Tomina E. V. Analysis of the optical and structural properties of oxide films on InP using spectroscopic ellipsometry. Technical Physics. 2013;58: 1638–1645. https://doi.org/10.1134/S1063784213110248

Mittova I. Ya., Tomina E. V., Sladkopevtsev B. V., Tret’Yakov N. N., Lapenko A. A., Shvets V. A. Highspeed determination of the thickness and spectral ellipsometry investigation of films produced by the thermal oxidation of InP and VxOy/InP structures. Inorganic Materials. 2013;49(2): 179–184. https://doi.org/10.1134/S0020168513020143

Mittova I. Ya., Tomina E. V., Samsonov A. A., Sladkopevtsev B. V., Tret’yakov N. N., Shvets V. A. Determination of the thickness and optical constants of nanofilms produced by the thermal oxidation of InP with V2O5, V2O5 + PbO, and NiO + PbO chemical stimulator layers grown by magnetron sputtering. Inorganic Materials. 2013;49(10): 963–970. https://doi.org/10.1134/S0020168513100075

Kostryukov V. F., Mittova I. Ya., Shvets V. A., Tomina E. V., Sladkopevtsev B. V., Tret’yakov N. N. Spectral ellipsometry study of thin films grown on GaAs by chemically stimulated thermal oxidation. Inorganic Materials. 2014;50(9): 882–887. https://doi.org/10.1134/S0020168514090052

Sladkopevtsev B. V., Mittova I. Ya., Tomina E. V., Zabolotskaya A. V., Samsonov A. A., Dontsov A. I. Osobennosti kinetiki i mekhanizma formirovaniya plenok pri oksidirovanii geterostruktur V2O5/InP, sformirovannykh metoda mireaktivnogo magnetronnogo raspyleniya i elektricheskogo vzryva provodnika [Features of kinetics and echanism of films formation inoxidationof V 2O 5/ I n P heterostructures, formed by reactive magnetron sputtering and electric explosion of conductor]. Izvestiya vysshikh uchebnykh zavedenii. Fizika. 2014;57(7-2): 148–153. Available at: https://www.elibrary.ru/item.asp?id=23184829 (In Russ.)

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Ugai Ya. A., Samoilov A. M., Sharov M. K., Arsenov A. V., Buchnev S. A. Vyrashchivanie plenok PbTe, legirovannykh galliem v protsesse ikh rosta, na Si-podlozhkakh pri pomoshchi modifitsirovannogo metoda “goryachei stenki” [Growing of PbTe films doped with gallium during their growth on Si substrates using a modified “hot wall” method.]. Poverkhnost’. Rentgenovskie, sinkhrotronnye i neitronnye issledovaniya. 2002;3: 28–34. (In Russ.)

Ugai Ya. A., Samoylov A. M., Buchnev S. A., Synorov Yu. V., Sharov M. K. Ga doping of thin PbTe films on Si substrates during growth. Inorganic Materials. 2002;38(5): 450–456. https://doi.org/10.1023/A:1015410703238

Ugai Ya. A., Samoylov A. M., Sharov M. K., Yatsenko O. B., Akimov B. A. Transport properties of Ga-doped PbTe thin films on Si substrates. Inorganic Materials. 2002; 38 (1): 12−16. https://doi.org/10.1023/A:1013687024227

Samoylov A. M., Buchnev S. A., Khoviv A. M., Dolgopolova E. A., Zlomanov V. P. Comparative study of point defects induced in PbTe thin films doped with Ga by different techniques. Materials Science in Semiconductor Processing. 2003;6(5-6): 481−485. https://doi.org/10.1016/j.mssp.2003.07.014

Samoylov A. M., Khoviv A. M., Buchnev S. A., Synorov Yu. V., Dolgopolova E. A. Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique. Journal of Crystal Growth. 2003;254(1-2): 55−64. https://doi.org/10.1016/S0022-0248(03)01022-4

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Samoylov A. M., Belenko S. V., Dolgopolova E. A., Khoviv A. M., Synorov Y. V. The solubility region of Ga in PbTe films prepared on Si-substrates by modified “Hot Wall” technique. Functional Materials. 2011;18(2): 181−188. Available at: https://www.elibrary.ru/item.asp?id=18002278

Samoylov A. M., Belenko S. V., Sharov M. K., Dolgopolova E. A., Zlomanov V. P. The deviation from a stoichiometry and the amphoteric behaviour of Ga in PbTe/Si films. Journal of Crystal Growth. 2012;351(1):

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Akimov A. N., Klimov A. E., Samoilov A. M., Shumskii V. N., Epov V. S. Zavisimost’ kinetiki fototoka v plenkakh Pbx–1SnxTe ot urovnya osveshcheniya i vremeni ekspozitsii [Dependence of photocurrent kinetics in Pbx-1SnxTe films on illumination intensity and duration of exposure]. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases.. 2013;15(4): 378–381. Available at: https://elibrary.ru/item.asp?id=20931228 (In Russ., abstract in Eng.)

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Ievlev V. M., Ryabtsev S. V., Shaposhnik A. V., Samoylov A. M., Kuschev S. B., Sinelnikov A. A. Ultrathin films of palladium oxide for oxidizing gases detecting. Procedia Engineering. 2016;168: 1106−1109. https://doi.org/10.1016/j.proeng.2016.11.357

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Ievlev V. M., Ryabtsev S. V., Samoylov A. M., Shaposhnik A. V., Kuschev S. B., Sinelnikov A. A. Thin and ultrathin films of palladium oxide for oxidizing gases detection. Sensors and Actuators B: Chemical. 2018;255(2): 1335–1342. https://doi.org/10.1016/j.snb.2017.08.121

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Samoilov A. M., Pelipenko D. I., Kuralenko N. S. Raschet oblasti nestekhiometrii nanokristallicheskikh plenok oksida palladiya (II) [Calculation of the nonstoichiometry area of nanocrystalline palladium (II) oxide films]. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 2021;23(1): 62–72. https://doi.org/10.17308/kcmf.2021.23/3305

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Nguyen A. T., Nguyen T. D., Mittova V. O., Berezhnaya M. V., Mittova I. Ya. Phase composition and magnetic properties of Ni1-XCoXFe2O4 nanocrystals with spinel structure, synthesized by co-precipiation. Nanosystems: Physics, Chemistry, Mathematics. 2017;8(3): 371–377. https://doi.org/10.17586/2220-8054-2017-8-3-371-377

Nguyen T. A., Nguyen L. T. Tr., Bui V. X., Nguyen D. H. T., Lieu H. D., Le L. M. T., Pham V. Optical and magnetic properties of HoFeO3 nanocrystals prepared by a simple co-precipitation method using ethanol. Journal of Alloys and Compounds. 2020;834: 155098. https://doi.org/10.1016/j.jallcom.2020.155098

Published
2021-08-17
How to Cite
Mittova, I. Y., Sladkopevtsev, B. V., & Mittova, V. O. (2021). Nanoscale semiconductor and dielectric films and magnetic nanocrystals – new directions of development of the scientific school of Ya. A. Ugai “Solid state chemistry and semiconductors”. Review. Condensed Matter and Interphases, 23(3), 309-336. https://doi.org/10.17308/kcmf.2021.23/3524
Section
Review

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