Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy

Authors

DOI:

https://doi.org/10.17308/kcmf.2023.25/10978

Keywords:

GaN, AlN, m-Al2O3, chemical vapor-phase epitaxy

Abstract

     In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film.
     It was found that selected technological conditions for the performed chloride-hydride epitaxy let us obtain the samples of structurally qualitative semi-polar wurtzite gallium nitride with (11¯22) orientation on m-sapphire. Using a set of structural and spectral methods of analysis the structural, morphological, and optical properties of the films were studied and the value of residual bi-axial stresses was determined. A complex of the obtained results means a high structural and optical quality of the epitaxial gallium nitride film.
     Optimization of the applied technological technique in the future can be a promising approach for the growth of the qualitative GaN structures on m-sapphire substrates.

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Author Biographies

  • Pavel V. Seredin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

    Dr. Sci. (Phys.-Math.), Full
    Professor, Chair of department, Department of Solid
    State Physics and Nanostructures, Voronezh State
    University (Voronezh, Russian Federation).

  • Nikolay A. Kurilo, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

    postgraduate student, Department
    of Solid State Physics and Nanostructures, Voronezh
    State University (Voronezh, Russian Federation).

  • Obaid Radam Ali, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

    postgraduate student,
    Department of Solid State Physics and Nanostructures,
    Voronezh State University (Voronezh, Russian
    Federation).

  • Nikita S. Buylov, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

    Cand. Sci. (Phys.-Math.), Educator,
    Department of Solid State Physics and Nanostructures,
    Voronezh State University (Voronezh, Russian
    Federation).

  • Dmitry L. Goloshchapov, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

    Cand. Sci. (Phys.-Math.),
    Assistant Professor, Department of Solid State Physics
    and Nanostructures, Voronezh State University
    (Voronezh, Russian Federation).

  • Sergey Alexandrovich Ivkov, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

    Cand. Sci. (Phys.-
    Math.), Educator, Department of Solid State Physics
    and Nanostructures, Voronezh State University
    (Voronezh, Russian Federation).

  • Alexandr S. Lenshin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

    Dr. Sci. (Phys.-Math.), Leading
    Researcher, Department of Solid State Physics and
    Nanostructures, Voronezh State University (Voronezh,
    Russian Federation).

  • Ivan N. Arsentyev, Ioffe Institute, 26 Politekhnicheskaya str., Sankt-Petersburg 194021, Russian Federation

    Dr. Sci. (Eng.), Leading Researcher,
    Ioffe Institut, (Saint Petersburg, Russian Federation).

  • Alexey V. Nashchekin, Ioffe Institute, 26 Politekhnicheskaya str., Sankt-Petersburg 194021, Russian Federation

    Cand. Sci. (Phys.-Math.),
    Senior Researcher, Ioffe Institute (Saint Petersburg,
    Russian Federation).

  • Shukrilo Sh. Sharofidinov, Ioffe Institute, 26 Politekhnicheskaya str., Sankt-Petersburg 194021, Russian Federation

    Cand. Sci. (Phys.-Math.),
    Researcher, Ioffe Institute (Saint Petersburg, Russian
    Federation).

  • Andrey M. Mizerov, Federal State Budgetary Institution of the Highest Education and Science «Sankt-Petersburg National Research Academic University of Russian Academy of Sciences», 8 Khlopina, str., Bd. 3, A, Sankt-Petersburg 194021, Russian Federation

    Cand. Sci. (Phys.-Math.),
    Leading Researcher, Saint Petersburg National
    Research Academic University of the Russian Academy
    of Sciences (Saint Petersburg, Russian Federation).

  • Maksim S. Sobolev, Federal State Budgetary Institution of the Highest Education and Science «Sankt-Petersburg National Research Academic University of Russian Academy of Sciences», 8 Khlopina, str., Bd. 3, A, Sankt-Petersburg 194021, Russian Federation

    Cand. Sci. (Phys.-Math.), Acting
    Head of the Laboratory of Nanoelectronics, Sankt-
    Petersburg National Research Academic University of
    Russian Academy of Sciences (Saint Petersburg,,
    Russian Federation).

  • Evgeniy V. Pirogov, Federal State Budgetary Institution of the Highest Education and Science «Sankt-Petersburg National Research Academic University of Russian Academy of Sciences», 8 Khlopina, str., Bd. 3, A, Sankt-Petersburg 194021, Russian Federation

    Junior Researcher, Saint
    Petersburg National Research Academic University of
    Russian Academy of Sciences (Saint Petersburg,
    Russian Federation).

  • Igor V. Semeykin, Research Institute of Electronic Technology, 5 Staryh Bolshevikov str., Voronezh 394033, Russian Federation

    Cand. Sci. (Eng.),
    Technical Director, Research Institute of Electronic
    Technology (Voronezh, Russian Federation).

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Published

2023-03-09

Issue

Vol. 25 No. 1 (2023)

Section

Original articles

How to Cite

Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy. (2023). Kondensirovannye Sredy I Mezhfaznye Granitsy = Condensed Matter and Interphases, 25(1), 103-111. https://doi.org/10.17308/kcmf.2023.25/10978

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