Electronic structure and spatial architecture of chemically deposited high-phosphorus nickel coatings for application in advanced microelectronics technologies

Vitaly V. Pobedinsky; Nikita S. Buylov; Evgenia A. Ilina; Dmitry L. Goloshchapov; Eugeny S. Kersnovsky; Ivan V. Polshin; Andrey I. Chukavin; Konstantin V. Zolnikov; Pavel P. Kutsko; Pavel L. Parmon; Igor V. Semeykin; Ivan V. Koniaev; Pavel V. Seredin

doi:10.17308/kcmf.2026.28/13566

Authors

Vitaly V. Pobedinsky Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation , Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation
Nikita S. Buylov Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation , Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation
Evgenia A. Ilina Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation
Dmitry L. Goloshchapov Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation
Eugeny S. Kersnovsky Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation
Ivan V. Polshin Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation
Andrey I. Chukavin Udmurt Federal Research Center Ural Branch of the Russian Academy of Sciences, 34, T. Baramzina st., Izhevsk 426067, Russian Federation
Konstantin V. Zolnikov Voronezh State University of Forestry and Technologies named after G. F. Morozov, 8, Timiryazeva st., Voronezh 394087, Russian Federation
Pavel P. Kutsko Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation
Pavel L. Parmon Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation
Igor V. Semeykin Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation
Ivan V. Koniaev Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation
Pavel V. Seredin Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

DOI:

https://doi.org/10.17308/kcmf.2026.28/13566

Keywords:

Electroless nickel plating, High-phosphorus nickel coatings, Barrier layer, TSV technology, Heterogeneous 3D integration

Abstract

Objectives: This article examines the suitability of chemically deposited high-phosphorus nickel-phosphorus coatings as barrier layers for Through-Silicon Via (TSV) technology. Energy-dispersive X-ray microanalysis revealed that the phosphorus content in the coating is 10.2 wt. % (17.8 at. %). This high phosphorus concentration ensures the coating remains in an amorphous state, which is a critical prerequisite for effective barrier performance.

Experimental: Using X-ray photoelectron spectroscopy and soft X-ray spectroscopy, it was determined that the spherical globular formations comprising the coating have a core–shell structure. It was also demonstrated that the phosphorus concentration in the shell is higher than in the core.

Conclusions: The results obtained are of significant interest for advancing modern semiconductor manufacturing technologies, particularly in the area of heterogeneous 3D integration

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Author Biographies

Vitaly V. Pobedinsky, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation, Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation

Cand. Sci. (Eng.), Advisor to the General Director, Research Institute of Electronic Technology (Voronezh, Russian Federation)
Nikita S. Buylov, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation, Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation

Cand. Sci. (Phys.–Math.), Educator, Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation)
Evgenia A. Ilina, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

Junior Researcher, Laboratory of organic additives for the processes of chemical and electrochemical deposition of metals and alloys used in the electronics industry, Voronezh State University (Voronezh, Russian Federation)
Dmitry L. Goloshchapov, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

Cand. Sci. (Phys.–Math.), Assistant Professor, Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation)
Eugeny S. Kersnovsky, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

graduate student, Technician, Department of Solid State Physics and Nanostructures, Voronezh State University, (Voronezh, Russian Federation)
Ivan V. Polshin, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

magistrate, Laboratory Assistant, Department of Solid State Physics and Nanostructures, Voronezh State University, (Voronezh, Russian Federation)
Andrey I. Chukavin, Udmurt Federal Research Center Ural Branch of the Russian Academy of Sciences, 34, T. Baramzina st., Izhevsk 426067, Russian Federation

Cand. Sci. (Phys.–Math.), Senior Researcher, Udmurt Federal Research Center of the Ural Branch of the Russian Academy of Sciences (Izhevsk, Russian Federation)
Konstantin V. Zolnikov, Voronezh State University of Forestry and Technologies named after G. F. Morozov, 8, Timiryazeva st., Voronezh 394087, Russian Federation

Cand. Sci. (Eng.), Associate Professor, Head of the Department, Basic Department of Technical and Software Support for Computing and Information Systems, Voronezh State Forestry Engineering University named after G. F. Morozov (Voronezh, Russian Federation)
Pavel P. Kutsko, Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation

Cand. Sci. (Eng.), General Director, Research Institute of Electronic Technology (Voronezh, Russian Federation)
Pavel L. Parmon, Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation

Director of Quality, Research Institute of Electronic Technology (Voronezh, Russian Federation
Igor V. Semeykin, Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation

Cand. Sci. (Eng.), Technical Director, Research Institute of Electronic Technology (Voronezh, Russian Federation)
Ivan V. Koniaev, Research Institute of Electronic Technology, 5, Staryh Bolshevikov st., Voronezh 394033, Russian Federation

Cand. Sci. (Eng.), Lead Engineer, Research Institute of Electronic Technology (Voronezh, Russian Federation)
Pavel V. Seredin, Voronezh State University, 1, Universitetskaya pl., Voronezh 394018, Russian Federation

Dr. Sci. (Phys.–Math.), Full Professor, Chair of department, Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation)

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