Residual strain evaluation in GaN/AlN multiperiod superlattices grown on SiC/Si

Pavel V. Seredin; Shukrilo Sh. Sharofidinov; Dmitry L. Goloshchapov; Nikita S. Buylov; Konstantin A. Eremeev; Shaira A. Yusupova; Sergey A. Kukushkin

doi:10.17308/kcmf.2024.26/12227

Pavel V. Seredin Voronezh State University, Universitetskaya pl. 1, Voronezh 394018, Russian Federation https://orcid.org/0000-0002-6724-0063
Shukrilo Sh. Sharofidinov Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation https://orcid.org/0000-0003-0354-5981
Dmitry L. Goloshchapov Voronezh State University, Universitetskaya pl. 1, Voronezh 394018, Russian Federation https://orcid.org/0000-0002-1400-2870
Nikita S. Buylov Voronezh State University, 1 Universitetskaya pl., Voronezh, 394018, Russian Federation https://orcid.org/0000-0003-1793-4400
Konstantin A. Eremeev Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation https://orcid.org/0009-0004-9798-6642
Shaira A. Yusupova Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation
Sergey A. Kukushkin Institute for Problems in Mechanical Engineering of the Russian Academy of Science, 61 Boljshoy prospekt V.O., St. Petersburg 199178, Russian Federation https://orcid.org/0000-0002-2973-8645

DOI: https://doi.org/10.17308/kcmf.2024.26/12227

Keywords: GaN, AlN, Superlattice, Raman spectroscopy

Abstract

In our study, we formed a multilayer heterostructure consisting of periodic GaN and AlN layers by means of chloride-hydride epitaxial growth on a hybrid SiC/Si substrate synthesized using the method of the coordinated substitution of atoms.

A comprehensive study of the heterostructure by means of nanoscale mapping of elastic strain demonstrated that in the upper GaN layer the dual-axis strain sxx is minimal (~ –0.12 GPa). There is practically no strain in the superlattices located in the upper part of the heterostructure.

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Author Biographies

Pavel V. Seredin, Voronezh State University, Universitetskaya pl. 1, Voronezh 394018, Russian Federation

Dr. Sci. (Phys.–Math.), Full
Professor, Head of the Department, Department
of Solid State Physics and Nanostructures,
Voronezh State University (Voronezh, Russian
Federation)

Shukrilo Sh. Sharofidinov, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation

Cand. Sci. (Phys.–
Math.), Research Fellow, Ioffe Institute (St.
Petersburg, Russian Federation)

Dmitry L. Goloshchapov, Voronezh State University, Universitetskaya pl. 1, Voronezh 394018, Russian Federation

Cand. Sci. (Phys.–
Math.), Assistant Professor, Department of Solid
State Physics and Nanostructures, Voronezh State
University (Voronezh, Russian Federation)

Nikita S. Buylov, Voronezh State University, 1 Universitetskaya pl., Voronezh, 394018, Russian Federation

Cand. Sci. (Phys.–Math.),
Educator, Department of Solid State Physics
and Nanostructures, Voronezh State University
(Voronezh, Russian Federation)

Konstantin A. Eremeev, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation

student, Department of
Solid State Physics and Nanostructures, Voronezh
State University (Voronezh, Russian Federation)

Shaira A. Yusupova, Ioffe Institute, 26 Polytechnicheskaya st., St. Petersburg 194021, Russian Federation

Cand. Sci. (Phys.–Math.),
Researcher, Laboratory of Power Semiconductor
Devices, Department of Solid State Electronics,
Ioffe Institute (St. Petersburg, Russian Federation)

Sergey A. Kukushkin, Institute for Problems in Mechanical Engineering of the Russian Academy of Science, 61 Boljshoy prospekt V.O., St. Petersburg 199178, Russian Federation

Dr. Sci. (Phys.–Math.),
Professor, Head of Laboratory, Institute for
Problems in Mechanical Engineering of the
Russian Academy of Sciences (St. Petersburg,
Russian Federation)

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Residual strain evaluation in GaN/AlN multiperiod superlattices grown on SiC/Si

Abstract

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