Полуполярный GaN(11-22) на наноструктурированном Si(113): структура для снижения термических напряжений
Аннотация
Сообщается о росте полуполярных GaN(11-22) слоев методом эпитаксии из металлоорганических соединений на нано-структурированной подложке NP-Si(113). Показано, что упругие деформированные структуры GaN(11-22)/NP-Si(113) при зарождении островкового слоя формируют нано-метровый “податливый” слой кремния на подложке, а упругие напряжения, обусловленные различием температурных коэффициентов GaN и Si в такой структуре, уменьшаются
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Литература
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