Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer

Alexander S. Lenshin; Pavel V. Seredin; Dmitry S. Zolotukhin; Artemy N. Beltyukov; Andrey M. Mizerov; Igor A. Kasatkin; Ali O. Radam; Evelina P. Domashevskaya

doi:10.17308/kcmf.2022.24/9055

Alexander S. Lenshin Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation; Voronezh State University of Engineering Technologies, 19 pr. Revolyutsii, Voronezh 394036, Russian Federation https://orcid.org/0000-0002-1939-253X
Pavel V. Seredin Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation https://orcid.org/0000-0002-6724-0063
Dmitry S. Zolotukhin Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation https://orcid.org/0000-0002-9645-9363
Artemy N. Beltyukov Udmurt Federal Research Centre of the Ural Branch of the Russian Academy of Sciences, 34 T. Baramzina ul., Izhevsk 426067, Russian Federation https://orcid.org/0000-0002-7739-7400
Andrey M. Mizerov Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Building 3, letter A, 8 Khlopin ul., Saint Petersburg 194021, Russian Federation https://orcid.org/0000-0002-9125-6452
Igor A. Kasatkin Saint Petersburg State University, 7/9 Universitetskaya naberezhnaya, Saint Petersburg 199034, Russian Federation https://orcid.org/0000-0001-9586-5397
Ali O. Radam Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation https://orcid.org/0000-0002-1072-0816
Evelina P. Domashevskaya Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation https://orcid.org/0000-0002-6354-4799

DOI: https://doi.org/10.17308/kcmf.2022.24/9055

Keywords: Porous silicon buffer layer, Heterostructures, Epitaxy

Abstract

In this work, we studied the efficiency of introducing nanoporous silicon as a buffer layer in the growth of Al_xGa_1–xN/AlN/Si(111) on a single-crystal silicon by molecular beam growth technology. We also considered its influence on the morphological characteristics and atomic composition of the surface layers of heterostructures. As determined by X-ray diffraction, microscopic, and X-ray photoelectron methods, the heterostructure grown on Si(111) n-type monocrystalline silicon wafer with nanoporous por-Si buffer layer has a more homogeneous epitaxial layer, and the surface morphology of the layer is also more homogeneous.

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Author Biographies

Alexander S. Lenshin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation; Voronezh State University of Engineering Technologies, 19 pr. Revolyutsii, Voronezh 394036, Russian Federation

DSc in Physics and Mathematics, leading researcher at the Department of Solid State Physics and Nanostructures, Voronezh State University; Associate Professor, Voronezh State University of Engineering Technologies (Voronezh, Russian Federation).

Pavel V. Seredin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

DSc in Physics and Mathematics, Head of the Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation).

Dmitry S. Zolotukhin, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

PhD student at the Department of Solid State Physics and Nanostructures, Voronezh State University (Voronezh, Russian Federation).

Artemy N. Beltyukov, Udmurt Federal Research Centre of the Ural Branch of the Russian Academy of Sciences, 34 T. Baramzina ul., Izhevsk 426067, Russian Federation

PhD in Physics and Mathematics, Senior Researcher at the Udmurt Federal Research Center of the Ural Branch of the Russian Academy of Sciences (Izhevsk, Russian Federation).

Andrey M. Mizerov, Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Building 3, letter A, 8 Khlopin ul., Saint Petersburg 194021, Russian Federation

PhD in Physics and Mathematics,
Leading Researche ratthe Laboratory of
Nanoelectronics, Alferov Federal State Budgetary
Institution of Higher Education and Science Saint
Petersburg National Research Academic University of
the Russian Academy of Sciences (Saint Petersburg,
Russian Federation).

Igor A. Kasatkin, Saint Petersburg State University, 7/9 Universitetskaya naberezhnaya, Saint Petersburg 199034, Russian Federation

PhD in Geology and Mineralogy,
leading specialist in high resolution X-ray
diffractometry, Saint Petersburg State University,
Research Centre for X-ray Diffraction Studies (Saint
Petersburg, Russian Federation).

Ali O. Radam, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

PhD student at the Department of
Solid State Physics and Nanostructures, Voronezh
State University (Voronezh, Russian Federation).

Evelina P. Domashevskaya, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

DSc in Physics and
Mathematics, Professor at the Department of Solid
State Physics and Nanostructures, Voronezh State
University (Voronezh, Russian Federation).

References

Ho V. X., Al Tahtamouni T. M., Jiang H. X., Lin J. Y., Zavada J. M., Vinh N.Q. Room-temperature lasing action in GaN quantum wells in the infrared 1.5 μm region. ACS Photonics. 2018;5: 1303–1309. https://doi.org/10.1021/acsphotonics.7b01253

Lauret T., Manceau J.-M., Monroy E., Lim C. B., Rennesson S., Semond F., Julien F. H., Colombelli R. Short-wave infrared (l = 3 μm) intersubband polaritons in the GaN/AlN system. Applied Physics Letters. 2017;110: 131102. https://doi.org/10.1063/1.4979084

Ajay A., Lim C. B., Browne D. A., Polaczynski J., Bellet-Amalric E., den Hertog M. I., Monroy E. Intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures in self-assembled nanowire and 2D layers. Physica Status Solidi B. 2017;254: 1600734. https://doi.org/10.1002/pssb.201600734

Gkanatsiou A. A., Lioutas Ch. B., Frangis N., Polychroniadis E. K., Prystawko P., Leszczynski M. Electron microscopy characterization of AlGaN/GaN heterostructures grown on Si (111) substrates. Superlattices and Microstructures. 2017;103: 376–385. https://doi.org/10.1016/j.spmi.2016.10.024

Oh J-T., Moon Y-T., Jang J-H., Eum J-H., Sung Y-J., Lee S. Y., Song J-O., Seong T-Y. Highperformance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined lowtemperature and high-temperature-grown AlN buffer layer. Journal of Alloys and Compounds. 2018;732: 630–636. https://doi.org/10.1016/j.jallcom.2017.10.200

Sugawara Y., Ishikawa Y., Watanabe A., Miyoshi M., Egawa T. Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation. Journal of Crystal Growth. 2017;468: 536–540. https://doi.org/10.1016/j.jcrysgro.2016.11.010

Mizerov A. M., Timoshnev S. N., Sobolev M. S., Nikitina E. V., Shubina K. Yu., Berezovskaia T. N., Shtrom I. V., Bouravleuv A. D. Features of the initial stage of GaN growth on Si(111) substrates by nitrogenp lasma-assisted molecular-beamepitaxy. Semiconductors. 2018;52(12), 1529-1533. https://doi.org/10.1134/S1063782618120175

Kukushkin S. A., Mizerov A. M., Osipov A. V., Redkov A. V., Timoshnev S. S. Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues. Thin Solid Films. 2018;646: 158–162. https://doi.org/10.1016/j.tsf.2017.11.037

Lenshin A. S., Kashkarov V. M., Domashevskaya E. P., Bel’tyukov A. N., Gil’mutdinov F. Z. Investigations of the composition of macro-, microand nanoporous silicon surface by ultrasoft X-ray spectroscopy and X-ray photoelectron spectroscopy. Applied Surface Science. 2015;359: 550–559. https://doi.org/10.1016/j.apsusc.2015.10.140

NIST X-ray Photoelectron Spectroscopy Database. Available at: https://srdata.nist.gov/xps/11. Seredin P. V., Goloshchapov D. L., Lenshin А. S., Mizerov А. М., Zolotukhin D. S. Influence of por-Si sublayer on the features of heteroepitaxial growth and physical properties of InxGa1-xN/Si(111) heterostructures with nanocolumn morphology of thin film. Physica E: Low-dimensional Systems and Nanostructures. 2018;104: 101–110. https://doi.org/10.1016/j.physe.2018.07.024

Seredin P. V., Lenshin A. S., Mizerov A. M., Leiste H., Rinke M. Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111). Applied Surface Science. 2019;476: 1049–1060. https://doi.org/10.1016/j.apsusc.2019.01.239

Fang Z. L., Li, Q. F. Shen X. Y., Cai J. F., Kang J. Y., Shen W. Z., Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission. Journal of Applied Physics. 2014;115(4): 043514. https://doi.org/10.1063/1.4863208

Seredin P. V., Lenshin A. S., Zolotukhin D. S., Goloshchapov D. L., Mizerov A. M., Arsentyev I. N., Beltyukov A. N. Investigation into the influence of a buffer layer of nanoporous silicon on the atomic and electronic structure and optical properties of AIIIN/ por-Si heterostructures grown by plasma-activated molecular-beam epitaxy. Semiconductors. 2019;53 (7): 993–999. https://doi.org/10.1134/S1063782619070224