Analysis of the crystalline quality of bulk In0.83Ga(Al)0.17 layers formed on metamorphic InAlAs/InP buffer layers with linear and nonlinearcomposition gradients

Elena I. Vasilkova; Evgeny V. Pirogov; Vladimir N. Nevedomskiy; Oleg V. Barantsev; Kirill O. Voropaev; Аndrey А. Vasil’ev; Leonid Ya. Karachinsky; Innokenty I. Novikov; Maxim S. Sobolev

doi:10.17308/kcmf.2025.27/12624

Elena I. Vasilkova Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; St. Petersburg Electrotechnical University “LETI”, 5 Professora Popova ul., Saint Petersburg 197022, Russian Federation https://orcid.org/0000-0002-0349-7134
Evgeny V. Pirogov Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation https://orcid.org/0000-0001-7186-3768
Vladimir N. Nevedomskiy Ioffe Institute, 26 Politekhnicheskaya st., Saint Petersburg 194021, Russian Federation https://orcid.org/0000-0002-7661-9155
Oleg V. Barantsev Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation https://orcid.org/0009-0001-6873-8488
Kirill O. Voropaev JSC “OKB-Planeta”, 13a, room 1n Bolshaya Moskovskaya st., Velikiy Novgorod 173004, Russian Federation https://orcid.org/0000-0002-6159-8902
Аndrey А. Vasil’ev JSC “OKB-Planeta”, 13a, room 1n Bolshaya Moskovskaya st., Velikiy Novgorod 173004, Russian Federation https://orcid.org/0009-0009-2615-6795
Leonid Ya. Karachinsky Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; LLC “Connector Optics”, 16 litera B Domostroitelnaya ul., Saint Petersburg 194292, Russian Federation https://orcid.org/0000-0002-5634-8183
Innokenty I. Novikov Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; LLC “Connector Optics”, 16 litera B Domostroitelnaya ul., Saint Petersburg 194292, Russian Federation https://orcid.org/0000-0003-1983-0242
Maxim S. Sobolev Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; St. Petersburg Electrotechnical University “LETI”, 5 Professora Popova ul., Saint Petersburg 197022, Russian Federation; LLC “Connector Optics”, 16 litera B Domostroitelnaya ul., Saint Petersburg 194292, Russian Federation https://orcid.org/0000-0001-8629-2064

DOI: https://doi.org/10.17308/kcmf.2025.27/12624

Keywords: Metamorphic buffer layers, Reciprocal space mapping of X-ray diffraction intensity, Transmission electron microscopy, Molecular beam epitaxy

Abstract

This paper investigates the effectiveness of metamorphic InAlAs buffer layers with linear and root-like dependence of the In mole fraction in the composition for the growth of bulk In_0.83Ga(Al)_0.17As layers on InP substrates. The analysis of the X-ray diffraction reciprocal space maps showed that in both cases In_0.83Ga(Al)_0.17As layers were partially strain-free. One of the mechanisms of strain relaxation during the growth of the linearly graded buffer layer is the rotation of the crystal lattice, while the mechanism of strain relaxation during the growth of the convex-graded buffer layer is a 0.82° tilt of the crystal lattice without any rotation. According to the images obtained by transmission electron microscopy, the density of threading dislocations in the upper InGaAs layers grown on the buffer layer with a linear composition gradient is ~ 5·10⁸ cm^–2

Downloads

Author Biographies

Elena I. Vasilkova, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; St. Petersburg Electrotechnical University “LETI”, 5 Professora Popova ul., Saint Petersburg 197022, Russian Federation

postgraduate student, Engineer, Alferov University (Saint Petersburg, Russian Federation)

Evgeny V. Pirogov, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation

Researcher, Alferov University (Saint Petersburg, Russian Federation)

Vladimir N. Nevedomskiy, Ioffe Institute, 26 Politekhnicheskaya st., Saint Petersburg 194021, Russian Federation

Senior Researcher, Ioffe Physical-Technical Institute of the Russian Academy of Sciences (Saint Petersburg, Russian Federation)

Oleg V. Barantsev, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation

student, Lab Assistant, Alferov University (Saint Petersburg, Russian Federation)

Kirill O. Voropaev, JSC “OKB-Planeta”, 13a, room 1n Bolshaya Moskovskaya st., Velikiy Novgorod 173004, Russian Federation

Head of the Group, JSC “OKB-Planeta” (Velikiy Novgorod, Russian Federation)

Аndrey А. Vasil’ev, JSC “OKB-Planeta”, 13a, room 1n Bolshaya Moskovskaya st., Velikiy Novgorod 173004, Russian Federation

Engineer-Technologist, JSC “OKBPlaneta” (Velikiy Novgorod, Russian Federation)

Leonid Ya. Karachinsky, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; LLC “Connector Optics”, 16 litera B Domostroitelnaya ul., Saint Petersburg 194292, Russian Federation

Dr. Sci. (Tech.), Chief Researcher, Alferov University and Leading Researcher, ITMO University (Saint Petersburg, Russian Federation)

Innokenty I. Novikov, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; LLC “Connector Optics”, 16 litera B Domostroitelnaya ul., Saint Petersburg 194292, Russian Federation

Cand. Sci. (Phys.–Math.), Senior Researcher, Alferov University and Senior Researcher, ITMO University (Saint Petersburg, Russian Federation)

Maxim S. Sobolev, Alferov University, 8/3 Khlopina st., Saint Petersburg 194021, Russian Federation; St. Petersburg Electrotechnical University “LETI”, 5 Professora Popova ul., Saint Petersburg 197022, Russian Federation; LLC “Connector Optics”, 16 litera B Domostroitelnaya ul., Saint Petersburg 194292, Russian Federation

Cand. Sci. (Phys.–Math.), Head of the Laboratory, Alferov University (Saint Petersburg, Russian Federation)

References

Galiev G. B., Vasil’evskii I. S., Pushkarev S. S., … Dwir Е. I. Suvorova metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer. Journal of Crystal Growth. 2013;366: 55–60. https://doi.org/10.1016/j.jcrysgro.2012.12.017

Kettler T., Karachinsky L. Ya., Fiol G., … Ledentsov N. N. Degradation-robust single mode continuous wave operation of 1.46 μm metamorphic quantum dot lasers on GaAs substrate. Applied Physics Letters. 2006;89(4): 041113. https://doi.org/10.1063/1.2236291

Egorov A. Yu., Karachinsky L. Ya., Novikov I. I., Babichev A. V., Nevedomskiy V. N., Bugrov V. E. Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400 nm spectral range. Semiconductors. 2016; 50(5): 612–615. https://doi.org/10.1134/S1063782616050079

Egorov A. Yu., Karachinsky L. Ya., Novikov I. I., Babichev A. V., Berezovskaya T. N., Nevedomskiy V. N. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: epitaxy, formation, and regrowth of mesa structures. Semiconductors. 2015;49(10): 1388–1392. https://doi.org/10.1134/S1063782615100073

Garcia I., France R. M., Geisz J. F., McMahon W. E., Steiner M. A., Johnston S., Friedman D. J. Metamorphic III–V solar cells: recent progress and potential. IEEE Journal of Photovoltaics. 2015;6(1): 366–373. https://doi.org/10.1109/JPHOTOV.2015.2501722

Liu Y., Ma Y., Li X., … Gong H. High temperature behaviors of 1–2.5 μm extended wavelength In0.83Ga0.17As photodetectors on InP substrate. IEEE Journal of Quantum Electronics. 2021;57(4): 1–7. https://doi.org/10.1109/JQE.2021.3087324

Gendry M., Drouot V., Santinelli C., Hollinger G. Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy. Applied Physics Letters. 1992;60(18): 2249–2251. https://doi.org/10.1063/1.107045

Ji X., Liu B., Tang H., … Yan F. 2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT. AIP Advances, 2014;4(8): 087135. https://doi.org/10.1063/1.4894142

Vasilkova E. I., Pirogov E. V., Sobolev M. S., Ubiyvovk Е. V., Mizerov А. М., Seredin P. V. Molecular beam epitaxy of metamorphic buffer for InGaAs/InP photodetectors with high photosensitivity in the range of 2.2–2.6 um. Condensed Matter and Interphases. 2023;25(1): 20–26. https://doi.org/10.17308/kcmf.2023.25/10972

Pobat D. B., Solov’ev V. A., Chernov M. Yu., Ivanov S. V. Distribution of misfit dislocations and elastic mechanical stresses in metamorphic buffer InAlAs layers of various constructions. Physics of the Solid State. 2021;63(1): 84–89. https://doi.org/10.1134/s1063783421010170

Solov’ev V. A., Chernov M. Yu., Sitnikova A. A., Brunkov P. N., Meltser B. Ya., Ivanov S. V. Optimization of the structural properties and surface morphology of a convex-graded InxAl1-xAs (x = 0.05–0.83) metamorphic buffer layer grown via MBE on GaAs (001). Semiconductors. 2018; 52(1): 120–125. https://doi.org/10.1134/s1063782618010232

Chen X., Gu Y., Zhang Y. Epitaxy and device properties of InGaAs photodetectors with relatively high lattice mismatch. Epitaxy. 2018: 203. https://doi.org/10.5772/intechopen.70259

Fewster P. F. Reciprocal space mapping. Critical Reviews in Solid State and Material Sciences. 1997;22(2): 69–110. https://doi.org/10.1080/10408439708241259

Bellani V., Bocchi C., Ciabattoni T., … Trevisi G. Residual strain measurements in InGaAs metamorphic buffer layers on GaAs. The European Physical Journal B. 2007;56: 217–222. https://doi.org/10.1140/epjb/e2007-00105-8

Fewster P. F. X-ray diffraction from low-dimensional structures. Semiconductor Science and Technology. 993;8(11): 1915. https://doi.org/10.1088/0268-1242/8/11/001

Vasil’evskii I. S., Pushkarev S. S., Grekhov M. M., Vinichenko A. N., Lavrukhin D. V., Kolentsova O. S. Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode. Semiconductors. 2016;50(4): 559–565. https://doi.org/10.1134/s1063782616040242

Lee D., Park M. S., Tang Z., Luo H., Beresford R., Wie C. R. Characterization of metamorphic InxGa1−xAs∕GaAs buffer layers using reciprocal space mapping. Journal of Applied Physics. 2007;101(6):063523, https://doi.org/10.1063/1.2711815

Aleshin A. N., Bugaev A. S., Ermakova M. A., Ruban O. A. Investigation of MHEMT heterostructure with In0.4Ga0.6As channel, grown by MBE on GaAs substrate, using reciprocal space mapping. Semiconductors. 2015;49(8):1065. Available at: https://journals.ioffe.ru/articles/viewPDF/42087

Chauveau J.-M., Androussi Y., Lefebvre A., Persio J. Di, Cordier Y. Indium content measurements in etamorphic high electron mobility transistor structures by combination of X-ray reciprocal space mapping and transmission electron microscopy. Journal of Applied Physics. 2003;93(7): 4219–4225. https://doi.org/10.1063/1.1544074