Synchrotron XANES studies of epitaxial tin-silicon solid solutions nanolayers
Abstract
Purpose: Functional tin and silicon-based materials and thin-film structures based on them are promising objects for microelectronics devices. An important issue for the study and subsequent application of such materials and structures is the properties control under formation technological regimes variations.
Experimental: The specificity of the local atomic surrounding and the features of the electronic structure of tin-silicon solid solutions have been studied by X-ray absorption near edge structure spectroscopy using synchrotron radiation. Nanolayer structures of tin-silicon solid solutions on buffer silicon nanolayers were formed using molecular beam epitaxy.
Conclusions: The possibility of forming an epitaxial tin-silicon solid solution in the concentration range significantly exceeding the known solubility limits of Sn in Si is shown. The rearrangement of the local density of the electronic states of tin and silicon indicates the formation of solid solutions with tin concentrations of 2, 8, and 15 at. %
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